Datasheet 2SK1405 Datasheet (HIT)

2SK1405

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Built-in fast diode (trr = 140 ns)

• Suitable for motor control, switching regulator, DC-DC converter

Outline

TO-3PFM

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1405

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

600 V
±30 V
15 A
60 A
15 A
60 W

2

2SK1405

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 9 14 — S ID = 8 A, VDS = 10 V *
Input capacitance Ciss — 3150 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 780 — pF f = 1 MHz
Reverse transfer capacitance Crss — 110 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

600 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.35 0.50 Ω ID = 8 A, VGS = 10 V *

— 35 — ns ID = 8 A, VGS = 10 V,
— 120 — ns RL = 3.75 Ω
— 240 — ns
— 100 — ns
— 1.0 — V IF = 15 A, VGS = 0

— 140 — ns IF = 15 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1405

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

20

10 V

6 V

5 V

16

(A)

D

12

Pulse Test

100

Maximum Safe Operation Area

30
10

Operation in this area

(A)

is limited by R

D

3
1

0.3

Drain Current I

0.1

0.03

Ta = 25°C

0.05
1

3 10 30 100 300 1,000

Drain to Source Voltage V

Typical Transfer Characteristics

20

VDS = 10 V
Pulse Test

16

(A)

D

12

10 µs

DS (on)

PW = 10 ms (1 Shot pulse)

DC Operation (T

100 µs

1 ms

C

= 25°C)

DS

(V)

8

Drain Current I

4

412160

Drain to Source Voltage VDS (V)

4.5 V

VGS = 4 V

8

Drain Current I

4

820

TC = 75°C

–25°C

2680

410

Gate to Source Voltage V

25°C

GS

(V)

4

2SK1405

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

10

(V)

Pulse Test

DS (on)

8

6

4

2

410

Drain to Source Saturation Voltage V

2680

Gate to Source Voltage V

ID = 5 A

(V)

GS

Static Drain to Source on State

Resistance vs. Temperature

2.0
Pulse Test

1.6

1.2

(Ω)

DS (on)

0.8

R

VGS = 10 V

ID = 20 A

0.4

0

Static Drain to Source on State Resistance

–40

Case Temperature T

40 160

0 80 120

C

20 A

10 A

5 A

(°C)

10 A

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1

(Ω)

0.5

DS (on)

R

VGS = 10, 15 V

0.2

0.1

0.05

Static Drain to Source on State Resistance

1 2 5 20 50 100

Drain Current I

10

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

20

TC = –25°C

25°C

10

75°C

5

2

V

1

DS

= 10 V

Pulse Test

Forward Transfer Admittance yfs (S)

0.5

0.2 2

15

0.5 10
Drain Current I

D

(A)

20

5

2SK1405

Body to Drain Diode Reverse

Recovery Time

500

200

(ns)

rr

100

50

20

di/dt = 100 A/µs, VGS = 0

10

Reverse Recovery Time t

Ta = 25°C
Pulse Test

5

0.5 10

150.2

Reverse Drain Current I

Dynamic Input Characteristics

1,000

V

= 100 V

800

DD

250 V
400 V

(V)

DS

600

400

V

DS

200

Drain to Source Voltage V

0

40 120 160

VDD = 400 V
250 V

100 V

80 200

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

10,000

Ciss

1,000

Coss

100

Capacitance C (pF)

V

= 0

GS

f = 1 MHz

2

DR

20

(A)

10

0

20 50

10 30 40

Drain to Source Voltage V

Crss

DS

(V)

Switching Characteristics

20

(V)

16

V

GS

ID = 15 A

12

8

4

Gate to Source Voltage V

0

500

200

GS

100

50

20

Switching Time t (ns)

10

5

t

r

t

d (off)

0.50.2 1

t

f

V

= 10 V, PW = 2 µs

GS

<

duty 1%, V

=

210520

t

d (on)

30 V

DD

.

=

.

Drain Current ID (A)

6

(A)

DR

20

16

12

8

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

V

= 0, –5 V

GS

2SK1405

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

4

10 V

Reverse Drain Current I

0.8 2.0

0

0.4 1.2 1.6

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

TC = 25°C

θch–c (t) = γ
θch–c = 2.08°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

Switching Time Test Circuit

Vin Monitor

Vin
10 V

50 Ω

D.U.T.

Vout Monitor

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

Waveforms

10%

10%

90% 90%

t

r

90%

10%

td

(off)

t

f

7

Unit: mm

4.0

2.6

1.4 Max

5.45 ± 0.5

15.6 ± 0.3

+ 0.4

φ3.2

– 0.2

5.0 ± 0.3

2.7

1.6

1.4 Max

1.0 ± 0.2

5.45 ± 0.5

5.0

5.5 ± 0.3

19.9 ± 0.3

3.2

21.0 ± 0.5

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3PFM
—
—

5.6 g

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