Datasheet 2SK1402A, 2SK1402 Datasheet (HIT)

2SK1402, 2SK1402A

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK1402, 2SK1402A

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1402 V

DSS

2SK1402A 650
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

600 V

±30 V
4A
16 A
4A
50 W

2

2SK1402, 2SK1402A

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source K1402 V

(BR)DSS

breakdown voltage K1402A 650 — —
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage K1402 I

GSS

DSS

drain current K1402A VDS = 550 V, VGS = 0
Gate to source cutoff voltage V
Static drain to source K1402 R

GS(off)

DS(on)

on state resistance K1402A — 2.0 2.6
Forward transfer admittance |yfs| 2.2 3.5 — S ID = 2 A, VDS = 10 V *
Input capacitance Ciss — 600 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 140 — pF f = 1 MHz
Reverse transfer capacitance Crss — 25 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

600 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 1.8 2.4 Ω ID = 2 A, VGS = 10 V *

—8 —nsI

= 2 A, VGS = 10 V,

D

— 30 — ns RL = 15 Ω
—60—ns
—35—ns
— 0.9 — V IF = 4 A, VGS = 0

— 300 — ns IF = 4 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1402, 2SK1402A

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

5

10 V

6 V
5 V

Pulse Test

4

(A)

D

3

4.5 V

Maximum Safe Operation Area
50
30

10

(A)

D

3

1

Operation in this area

is limited by R

0.3

Drain Current I

Ta = 25°C

0.1

0.05
1

3 10 30 100 300 1,000

Drain to Source Voltage V

Typical Transfer Characteristics

5

VDS = 20 V
Pulse Test

4

(A)

D

3

PW = 10 ms (1 shot pulse)

DC Operation (T

DS (on)

1 ms

C

= 25°C)

2SK1402

2SK1402A

100 µs

(V)

DS

10 µs

2

Drain Current I

1

10 30 400

Drain to Source Voltage V

4 V

VGS = 3.5 V

20 50

(V)

DS

2

Drain Current I

1

Gate to Source Voltage V

T

= –25°C

C

25°C
75°C

2680

410

(V)

GS

4

2SK1402, 2SK1402A

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20

(V)

DS (on)

16

Pulse Test

ID = 5 A

12

8

4

820

Drain to Source Saturation Voltage V

412160

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

10

VGS = 10 V
Pulse Test

8

6

(Ω)

DS (on)

4

R

ID = 5 A

2 A
1 A

GS

(V)

1 A

2 A

Static Drain to Source on State

Resistance vs. Drain Current

50

Pulse Test

20

10

(Ω)

DS (on)

R

5

VGS = 10 V

15 V

2

1

0.5

Static Drain to Source on State Resistance

0.2 0.5 1 2 5 20
Drain Current I

D

10

(A)

Forward Transfer Admittance

vs. Drain Current

10

V

DS

Pulse Test

5

= 20 V

TC = –25°C

25°C
75°C

2

1

0.5

2

0

Static Drain to Source on State Resistance

–40

Case Temperature T

40 160

0 80 120

(°C)

C

0.2

Forward Transfer Admittance yfs (S)

0.1

0.1 2

0.05 0.5

0.2 1

Drain Current I

D

5

(A)

5

2SK1402, 2SK1402A

Body to Drain Diode Reverse

Recovery Time

1,000

500

(ns)

rr

200

100

50

di/dt = 100 A/µs, VGS = 0

20

Reverse Recovery Time t

Ta = 25°C

10

0.1 2

0.2 10.05

Reverse Drain Current I

Dynamic Input Characteristics

1,000

VDD = 100 V

(V)

800

DS

250 V
400 V

600

V

400

200

Drain to Source Voltage V

DS

VDD = 400 V
250 V

100 V

0

16 40

824320

Gate Charge Qg (nc)

0.5

V

GS

(A)

DR

ID = 4 A

1,000

100

Capacitance C (pF)

5

GS

500

200

100

20

16

12

(V)

8

4

Switching Time t (ns)

Gate to Source Voltage V

0

Typical Capacitance vs.
Drain to Source Voltage

10

V

= 0

GS

f = 1 MHz

0

0

10 30 40

Drain to Source Voltage V

Switching Characteristics

V

= 10 V, PW = 2 µs

GS

<

duty 1%, V

=

50

20

t

r

10

5

0.1

0.5 10.2 2 10

Reverse Drain Current ID (A)

Ciss

Coss

Crss

20 50

(V)

DS

.

=

30 V

.

DD

t

d (off)

t

f

t

d (on)

5

6

Reverse Drain Current vs.

Source to Drain Voltage

5

Pulse Test

4

(A)

DR

3

2

1

Reverse Drain Current I

5 V, 10 V

0

0.8 2.0

0.4 1.2 1.6

Source to Drain Voltage VSD (V)

V

GS

2SK1402, 2SK1402A

= 0, –5 V

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10 µ

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

Vin
10 V

50 Ω

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ
θch–c = 2.50°C/W, T

P

DM

T

Pulse Width PW (s)

Waveforms

Vout Monitor

D.U.T.

R

L

V

DD

.

=

30 V

.

t

d (on)

Vin

Vout

10%

10%

90% 90%

t

r

TC = 25°C

(t) · θch–c

S

PW

td

(off)

= 25°C

C

D =

90%

PW

T

10%

t

f

7

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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