Datasheet 2SK1401A, 2SK1401 Datasheet (HIT)

2SK1401, 2SK1401A

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1401, 2SK1401A

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1401 V

DSS

2SK1401A 350
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

300 V

±30 V
15 A
60 A
15 A
100 W

2

2SK1401, 2SK1401A

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source K1401 V

(BR)DSS

breakdown voltage K1401A 350 — —
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage K1401 I

GSS

DSS

drain current K1401A VDS = 280 V, VGS = 0
Gate to source cutoff voltage V
Static drain to source K1401 R

GS(off)

DS(on)

on state resistance K1401A — 0.30 0.40
Forward transfer admittance |yfs| 6 9.5 — S ID = 8 A, VDS = 10 V *
Input capacitance Ciss — 1250 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 420 — pF f = 1 MHz
Reverse transfer capacitance Crss — 70 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

300 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 240 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.25 0.35 Ω ID = 8 A, VGS = 10 V *

— 15 — ns ID = 8 A, VGS = 10 V,
— 80 — ns RL = 3.75 Ω
— 100 — ns
—55—ns
— 1.05 — V IF = 15 A, VGS = 0

— 370 — ns IF = 15 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1401, 2SK1401A

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

20

16

(A)

D

12

10 V

8 V
6 V

5.5 V

Pulse Test

5 V

100

Maximum Safe Operation Area

30

PW = 10 ms (1 Shot Pulse)

(A)

D

10

DS (on)

DC Operation (T

Operation in this area

is limited by R

3

1.0

Drain Current I

0.3
Ta = 25°C

0.1

1 3 30 300

2SK1401
2SK1401A

10 100 1,000

Drain to Source Voltage V

Typical Transfer Characteristics

20

V

= 20 V

DS

Pulse Test

16

(A)

D

12

100 µs

1 ms

C

= 25°C)

10 µs

DS

(V)

8

Drain Current I

4

0

41216

Drain to Source Voltage V

8

4.5 V

V

= 4 V

GS

820

(V)

DS

Drain Current I

4

0

TC = 75°C

25°C

–25°C

410

268

Gate to Source Voltage V

GS

(V)

4

2SK1401, 2SK1401A

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20

16

12

(V)

DS (on)

8

V

4

Drain to Source Saturation Voltage

820

412160

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Temperature

1.0

0.8

0.6

(Ω)

DS (on)

0.4

R

V

= 10 V

GS

Pulse Test

ID = 20 A

0.2

Pulse Test

ID = 20 A

10 A

5 A

5 A

10 A

Static Drain to Source on State

Resistance vs. Drain Current

10

Pulse Test

5

2

(Ω)

1

DS (on)

R

0.5

V

= 10 V

GS

0.2

0.1

Static Drain to Source on State Resistance

250

15200.5
Drain Current I

10

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

V

= 20 V

DS

Pulse Test

20

10

5

TC = 75°C

25°C

–25°C

2

1

15 V

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

Case Temperature TC (°C)

Forward Transfer Admittance yfs (S)

0.5

0.5 2 10

0.2

120

Drain Current I

D

5

(A)

5

2SK1401, 2SK1401A

Body to Drain Diode Reverse

Recovery Time

500

200

(ns)

rr

100

50

20

Pulse Test

Reverse Recovery Time t

Ta = 25°C

di/dt = 100 A/µs, V

10

5

0.5 2 10

0.2

120

Reverse Drain Current I

Dynamic Input Characteristics

500

(V)

400

DS

V

DS

300

V

GS

200

V

= 100 V

100

Drain to Source Voltage V

0

DD

200 V
300 V

40 100

20 60 80

Gate Charge Qg (nc)

GS

200 V

100 V

= 0

V

5

DD

(A)

DR

= 300 V

ID = 15 A

10,000

1,000

100

Capacitance C (pF)

20

16

(V)

GS

500

200

100

12

50

8

20

4

Switching Time t (ns)

10

Gate to Source Voltage V

0

5

Typical Capacitance vs.
Drain to Source Voltage

V

= 0

GS

f = 1 MHz

5

20 50

10 30 40

0

Drain to Source Voltage V

Switching Characteristics

V

= 10 V, PW = 2 µs

GS

<

duty 1%, V

=

t

r

0.5 2 10

0.2

.

=

DD

t

f

120

Drain Current I

.

t

d (off)

t

d (on)

30 V

Ciss

Coss

Crss

D

5

(A)

DS

(V)

6

Reverse Drain Current vs.

Source to Drain Voltage

20

Pulse Test

(A)

16

DR

12

8

10 V

5V

4

Reverse Drain Current I

V

GS

0.8 2.0

0

0.4 1.2 1.6

Source to Drain Voltage V

= 0, –5 V

SD

2SK1401, 2SK1401A

(V)

(t)

S

Normalized Transient Thermal Impedance γ

3

1.0

0.3

0.1

0.03

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

Vin

50 Ω

10 V

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ
θch–c = 1.25°C/W, T

P

DM

Pulse Width PW (s)

Waveforms

Vout Monitor

D.U.T

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

10%

10%

90%

t

r

T

(t) · θch–c

S

PW

T

t

d (off)

= 25°C

C

90%

= 25°C

C

D =

90%

PW

T

10%

t

f

7

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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