Datasheet 2SK1400A, 2SK1400 Datasheet (HIT)

2SK1400, 2SK1400A

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK1400, 2SK1400A

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1400 V

DSS

2SK1400A 350
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

300 V

±30 V
7A
28 A
7A
50 W

2

2SK1400, 2SK1400A

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source K1400 V

(BR)DSS

breakdown voltage K1400A 350 — —
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage K1400 I

GSS

DSS

drain current K1400A VDS = 280 V, VGS = 0
Gate to source cutoff voltage V
Static drain to source K1400 R

GS(off)

DS(on)

on state resistance K1400A — 0.60 0.80
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A, VDS = 10 V *
Input capacitance Ciss — 635 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 230 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

300 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 240 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.50 0.70 Ω ID = 4 A, VGS = 10 V *

— 10 — ns ID = 4 A, VGS = 10 V,
— 50 — ns RL = 7.5 Ω
—60—ns
—40—ns
— 1.0 — V IF = 7 A, VGS = 0

— 240 — ns IF = 7 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1400, 2SK1400A

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

10

(A)

D

15 V

8

6

10 V

5.5 V
6 V

Pulse Test

5 V

50

Maximum Safe Operation Area

20
10

(A)

Operation in this area

5

D

DS (on)

PW = 10 ms (1 Shot)

DC Operation (T

is limited by R

2
1

0.5

Drain Current I

0.2

0.1
Ta = 25°C

0.05
1 3 30 300

10 100 1,000

C

2SK1400
2SK1400A

Drain to Source Voltage V

Typical Transfer Characteristics

10

V

= 20 V

DS

8

Pulse Test

(A)

D

6

100 µs

1 ms

= 25°C)

10 µs

DS

(V)

4

Drain Current I

2

0

41216

Drain to Source Voltage V

4.5 V

4

Drain Current I

4 V

V

= 3.5 V

GS

820

(V)

DS

2

0

75°C

Ta = 25°C

–25°C

268

4

Gate to Source Voltage V

GS

(V)

10

4

2SK1400, 2SK1400A

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

10

DS (on)

Pulse Test

8

ID = 10 A

6

4

2

820

Drain to Source Saturation Voltage V

412160

Gate to Source Voltage V

GS

Static Drain to Source on State

Resistance vs. Temperature

2.0

Pulse Test

1.6

V

= 10 V

GS

10 A

1.2

(Ω)

DS (on)

0.8

R

0.4

5 A
2 A

(V)

5 A
2 A

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

V

GS

= 10 V

1

(Ω)

0.5

DS (on)

R

0.2

0.1

0.05

Static Drain to Source on State Resistance

1.0 5 200.5

250

Drain Current I

10

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

V

= 20 V

DS

Pulse Test

20

10

5

–25°C

TC = 25°C

2

1

15 V

75°C

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

Case Temperature T

(°C)

C

Forward Transfer Admittance yfs (S)

0.5

0.2 10

0.1 0.5 2

Drain Current I

15

(A)

D

5

2SK1400, 2SK1400A

Body to Drain Diode Reverse

Recovery Time

500

(ns)

200

rr

100

50

20

di/dt = 50 A/µs, VGS = 0

10

Reverse Recovery Time t

Ta = 25°C
Pulse Test

5

0.5 2 10 20

0.2 5

1

Reverse Drain Current I

Dynamic Input Characteristics

500

(V)

DS

400

VDD = 50V

100 V
200 V

300

V

200

100

Drain to Source Voltage V

DS

200 V
100 V

VDD = 50 V

08

16 40

Gate Charge Qg (nc)

10,000

1,000

100

Capacitance C (pF)

10

(A)

DR

GS

500

200

100

20

(V)

16

V

GS

12

50

8

20

ID = 7 A

4

0

24032

Switching Time t (ns)

Gate to Source Voltage V

10

5

0.1

Static Drain-Source on State
Resistance vs. Drain Current

V

= 0 V

GS

f = 1 MHz

0

20 50

10 30 40

Drain to Source Voltage V

Switching Characteristics

VGS = 10 V VDD = 30 V

•

•

PW = 2 µs, duty < 1%

t

d (off)

t

f

t

r

t

d (on)

0.5 10

0.2 1 5
Drain Current I

Ciss

Coss

Crss

2

(A)

D

DS

(V)

6

Reverse Drain Current vs.

Sourse to Drain Voltage

10

Pulse Test

(A)

8

DR

6

4

2

5 V, 10 V

Reverse Dratin Current I

VGS = 0, –5 V

0

0.4 0.8 1.6

0

Source to Drain Voltage V

1.2

SD

2SK1400, 2SK1400A

2.0

(V)

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10 µ

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γS (t) · θch–c
θch–c = 2.50°C/W, T

P

DM

Pulse Width PW (s)

Waveforms

Vout Monitor

t

d (on)

Vin

Vout

10%

10%

90%

t

r

D.U.T

R

L

V

DD

.

=

30 V

.

T

= 25°C

C

= 25°C

C

PW

D =

PW

T

T

90%

10%

90%

t

d (off)

t

f

7

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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