Page 1
2SK1340
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
Page 2
2SK1340
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
900 V
±30 V
5A
12 A
5A
100 W
2
Page 3
2SK1340
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 2.0 3.2 — S ID = 3 A, VDS = 20 V *
Input capacitance Ciss — 740 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 305 — pF f = 1 MHz
Reverse transfer capacitance Crss — 150 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
900 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 720 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 3.0 4.0 Ω ID = 3 A, VGS = 10 V *
— 15 — ns ID = 3 A, VGS = 10 V,
— 70 — ns RL = 10 Ω
—90—ns
—90—ns
— 0.9 — V IF = 5 A, VGS = 0
— 900 — ns IF = 5 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
Page 4
2SK1340
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
5
Pulse Test
6 V
5 V
4
(A)
D
3
10 V
4.5 V
2
Maximum Safe Operation Area
50
20
10
(A)
5
D
DC Operation (T
DS (on)
2
1
Operation in this Area
is Limited by R
0.5
Drain Current I
0.2
0.1
Ta = 25°C
0.05
1 3 30 300
10 100 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
5
V
= 20 V
DS
Pulse Test
4
(A)
D
3
2
75°C
10 µs
100 µs
PW = 10 ms (1 Shot)
1 ms
C
= 25°C)
DS
(V)
Drain Current I
1
0
10 30 40
Drain to Source Voltage V
4 V
V
= 3.5 V
GS
20 50
(V)
DS
Drain Current I
TC = 25°C
1
0
268
Gate to Source Voltage V
–25°C
410
(V)
GS
4
Page 5
2SK1340
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
5 A
16
12
(V)
DS (on)
8
V
4
Drain to Source Saturation Voltage
820
412160
Gate to Source Voltage V
2 A
ID = 1 A
Pulse Test
(V)
GS
Static Drain to Source on State
Resistance vs. Temperature
10
V
= 10 V
GS
Pulse Test
8
6
(Ω)
DS (on)
4
R
ID = 5 A
1 A
2
0
Static Drain to Source on State Resistance
–40
0 80 120
40 160
Case Temperature T
(°C)
C
2 A
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V
= 10 V
(Ω)
GS
5
DS (on)
R
15 V
2
1
0.5
Static Drain to Source on State Resistance
120
0.5 2 100.2
Drain Current I
D
5
(A)
Forward Transfer Admittance
vs. Drain Current
10
5
2
–25°C
Tc = 25°C
75°C
1
0.5
0.2
Forward Transfer Admittance yfs (S)
0.1
0.05
0.2 5
0.1 0.5 2
Drain Current I
V
= 20 V
DS
Pulse Test
1
(A)
D
5
Page 6
2SK1340
Body to Drain Diode Reverse
Recovery Time
5,000
di/dt = 100 A/µs, Ta = 25°C
V
= 0
(ns)
2,000
rr
GS
Pulse Test
1,000
500
200
100
Reverse Recovery Time t
50
0.1
0.5 10
0.2 1 5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1,000
V
= 250 V
(V)
DS
800
600
DD
V
400 V
600 V
DS
400
200
V
= 250 V
Drain to Source Voltage V
DD
20 60 800
Gate Charge Qg (nc)
2
ID = 5 A
V
GS
600 V
400 V
40 100
10,000
1,000
100
Capacitance C (pF)
10
(V)
GS
500
200
100
20
16
12
50
8
20
4
0
Switching Time t (ns)
Gate to Source Voltage V
10
5
0.1
Typical Capacitance vs.
Drain to Source Voltage
V
= 0
GS
f = 1 MHz
Ciss
20 50
10 30 40
0
Drain to Source Voltage V
Switching Characteristics
V
= 10 V VDD = 30 V
GS
PW = 2 µs, duty < 1%
t
d (off)
t
f
t
r
t
d (on)
0.5 10
0.2 1 5
Drain Current I
2
D
Coss
Crss
(A)
DS
(V)
•
•
6
Page 7
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
(A)
8
DR
6
4
2
5V, 10 V
Reverse Drain Current I
0.8 2.0
0
0.4 1.2 1.6
Source to Drain Voltage V
V
GS
= 0, –5 V
SD
2SK1340
(V)
(t)
S
Normalized Transient Thermal Impedance γ
0.03
0.01
3
D = 1
1.0
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.01
1 Shot Pulse
10 µ
100 µ 10 m 100 m 1 101 m
Switching Time Test Circuit
Vin Monitor
Vin
50 Ω
10 V
Normalized Transient Thermal Impedance vs. Pulse Width
θch–c (t) = γS (t) · θch–c
θch–c = 1.25°C/W, T
P
DM
Pulse Width PW (s)
Waveforms
Vout Monitor
D.U.T
R
L
V
DD
.
=
30 V
.
Vin
Vout
t
d (on)
10%
10%
90%
t
r
PW
T
t
TC = 25°C
90%
d (off)
= 25°C
C
D =
90%
PW
T
10%
t
f
7
Page 8
1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g
Page 9
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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