Page 1
2SK1337
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
Page 2
2SK1337
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A, VDS = 10 V *
Input capacitance Ciss — 35 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 14 — pF f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
100 — — V ID = 10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 80 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 3.5 4.5 Ω ID = 0.2 A, VGS = 10 V *
— 4.0 6.5 Ω ID = 0.2 A, VGS = 4 V *
—2 —nsI
—4 —nsR
—17—ns
—15—ns
— 0.9 — V IF = 0.3 A, VGS = 0
— 80 — ns IF = 0.3 A, VGS = 0,
100 V
±20 V
0.3 A
1.2 A
0.3 A
= ±100 µA, VDS = 0
G
= 0.2 A, VGS = 10 V,
D
= 150 Ω
L
di
/dt = 50 A/µs
F
1
1
1
2
Page 3
2SK1337
Power vs. Temperature Derating
600
400
200
Channel Dissipation Pch (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0
0.8
(A)
D
0.6
5 V
Pulse Test10 V
VGS = 4 V
3.5 V
Maximum Safe Operation Area
5
2
1
(A)
0.5
D
0.2
0.1
Operation in this area
0.05
is limited by R
Drain Current I
0.02
0.01
Ta = 25°C
0.005
0.1
0.3 1 3 10 30 100
Drain to Source Voltage V
Typical Transfer Characteristics
1.0
0.8
(A)
D
0.6
–25°C
TC = 25°C
75°C
DS (on)
10 µs
100 µs
PW = 10 ms (1 shot)
1 ms
DC Operation
(V)
DS
VDS = 10 V
Pulse Test
0.4
Drain Current I
0.2
Drain to Source Voltage VDS (V)
3 V
2.5 V
412160
820
0.4
Drain Current I
0.2
Gate to Source Voltage V
2680
410
(V)
GS
3
Page 4
2SK1337
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
(V)
DS (on)
4
Pulse Test
3
2
1
ID = 0.5 A
0.2 A
0.1 A
410
Drain to Source Saturation Voltage V
2680
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Temperature
10
Pulse Test
8
ID = 0.5 A
0.2 A
0.1 A
6
(Ω)
DS (on)
4
R
VGS = 4 V
0.5 A
VGS = 10 V
2
GS
(V)
0.2 A
0.1 A
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
VGS = 4 V
(Ω)
5
DS (on)
R
10 V
2
1
0.5
Static Drain to Source on State Resistance
0.02 0.05 0.1 0.2 0.5 1
Drain Current I
D
(A)
Forward Transfer Admittance
vs. Drain Current
5
V
= 10 V
DS
Pulse Test
2
1
TC = –25°C
25°C
0.5
75°C
0.2
0.1
2
0
Static Drain to Source on State Resistance
–40
40 160
0 80 120
Case Temperature T
4
(°C)
C
Forward Transfer Admittance yfs (S)
0.05
0.1 2
0.05 0.2 10.02
Drain Current I
0.5
D
(A)
Page 5
2SK1337
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
V
= 0
200
(ns)
rr
GS
100
50
20
10
Reverse Recovery Time t
5
0.1 2
0.05 0.2 10.02
Reverse Drain Current I
Dynamic Input Characteristics
200
(V)
160
DS
VDD = 25 V
50 V
80 V
120
V
DS
80
40
Drain to Source Voltage V
VDD = 80 V
50 V
25 V
0
1.6 4.0
0.8 2.4 3.20
Gate Charge Qg (nc)
0.5
DR
V
GS
(A)
ID = 0.3 A
1,000
100
10
Capacitance C (pF)
1
20
16
(V)
GS
50
20
10
12
5
8
2
4
0
Switching Time t (ns)
0.5
1
0.02
Gate to Source Voltage V
Typical Capacitance vs.
Drain to Source Voltage
V
= 0
GS
f = 1 MHz
Ciss
Coss
Crss
0
20 50
10 30 40
Drain to Source Voltage V
Switching Characteristics
t
d (off)
t
f
t
r
V
= 10 V VDD = 30 V
GS
PW = 2 µs, duty < 0.1%
0.05 0.2 0.50.1 1 2
Drain Current ID (A)
t
d (on)
DS
(V)
•
•
5
Page 6
2SK1337
Reverse Drain Current vs.
1.0
0.8
(A)
DR
0.6
0.4
0.2
Reverse Drain Current I
Source to Drain Voltage
Pulse Test
V
= 10 V
DD
5 V
V
GS
= 0, –5 V
0
Source to Drain Voltage VSD (V)
0.8 2.0
0.4 1.2 1.6
6
Page 7
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 8
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