Page 1
2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
Page 2
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A, VDS = 10 V *
Input capacitance Ciss — 33 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 17 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
60——V I
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 50 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 1.3 1.7 Ω ID = 0.2 A, VGS = 10 V *
— 1.8 2.5 Ω ID = 0.2 A, VGS = 4 V *
—2 —nsI
—4 —nsR
—18—ns
—16—ns
— 0.9 — V IF = 0.3 A, VGS = 0
— 45 — ns IF = 0.3 A, VGS = 0,
60 V
±20 V
0.3 A
1.2 A
0.3 A
= 10 mA, VGS = 0
D
= ±100 µA, VDS = 0
G
= 0.2 A, VGS = 10 V,
D
= 150 Ω
L
di
/dt = 50 A/µs
F
1
1
1
2
Page 3
2SK1336
Power vs. Temperature Derating
600
400
200
Channel Dissipation Pch (mW)
0 50 100 150
Ambient Temperarure Ta (°C)
Typical Output Characteristics
1.0
0.8
(A)
D
0.6
10 V 6 V
4 V
Pulse Test
3.5 V
3 V
0.4
Maximum Safe Operation Area
5
3
1
(A)
D
0.3
DS (on)
Operation in this area
is limited by R
DC Operation (T
0.1
0.03
Drain Current I
0.01
Ta = 25°C
0.005
0.1 0.3 1 3 10 30
Drain to Source Voltage V
Typical Transfer Characteristics
1.0
V
= 10 V
DS
Pulse Test
0.8
(A)
D
0.6
0.4
10 µs
100 µs
PW = 10 ms (1 Shot)
1 ms
C
= 25°C)
100
(V)
DS
Drain Current I
0.2
Drain to Source Voltage V
2.5 V
V
= 2 V
GS
2680
410
(V)
DS
Drain Current I
0.2
25°C
TC = 75°C
Gate to Source Voltage V
–25°C
1340
25
(V)
GS
3
Page 4
2SK1336
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
(V)
1.0
DS (on)
Pulse Test
0.8
0.6
0.4
0.2 A
0.2
2680
Drain to Source Saturation Voltage V
410
ID = 0.1A
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
ID = 0.5 A
3
(Ω)
VGS = 4 V
DS (on)
2
R
1
10 V
0.2 A
0.1 A
0.5 A
0.2 A
0.1 A
0.5 A
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
(Ω)
5
DS (on)
R
2
1
0.5
Static Drain to Source on State Resistance
0.05
V
= 4 V
GS
10 V
0.1 0.2 0.5 1 2
Drain Current I
D
(A)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 10 V
Pulse Test
2
1
25°C
0.5
0.2
–25°C
TC = 75°C
0.1
5
0
Static Drain to Source on State Resistance
0 80 120
–40
40 160
Case Temperature TC (°C)
4
Forward Transfer Admittance yfs (S)
0.05
0.02
0.05 0.1 10.50.2
Drain Current I
D
2
(A)
Page 5
2SK1336
Body to Drain Diode Reverse
Recovery Time
1,000
di/dt = 50 A/µs
= 0, Ta = 25°C
V
GS
500
(ns)
rr
Pulse Test
200
100
50
20
Reverse Recovery Time t
10
0.05
0.1 0.2 0.5 1 2
Reverse Drain Current I
Dynamic Input Characteristics
100
(V)
DS
80
VDD = 10 V
25 V
50 V
60
V
DS
40
20
Drain to Source Voltage V
0
VDD = 50 V
25 V
10 V
0.8 2.4 3.20
1.6 4.0
Gate Charge Qg (nc)
V
GS
ID = 0.3 A
DR
(A)
100
10
1
Capacitance C (pF)
0.1
5
(V)
GS
100
50
20
16
20
12
10
8
5
Switching Time t (ns)
4
2
Gate to Source Voltage V
0
1
0.05
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
20 50
10 30 40
0
Drain to Source Voltage V
Switching Characteristics
V
= 10 V, PW = 2 µs
GS
t
f
t
r
duty < 1%, V
t
d (off)
t
d (on)
0.1 0.2 0.5 1 2
Drain Current I
Ciss
Coss
Crss
DD
(A)
D
=
DS
.
.
(V)
30 V
5
5
Page 6
2SK1336
Reverse Drain Current vs.
1.0
0.8
(A)
DR
0.6
0.4
0.2
Reverse Drain Current I
0
Source to Drain Voltage
Pulse Test
10 V
5 V
0.4 0.8 1.2 1.6
Source to Drain Voltage V
V
GS
= 0, –5 V
SD
2.0
(V)
6
Page 7
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 8
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