Page 1
2SK1334
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary Breakdown
• Suitable for switching regulator and DC-DC converter
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Page 2
2SK1334
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
200 V
±20 V
1A
2A
1A
1W
2
Page 3
2SK1334
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.4 0.6 — S ID = 0.5 A, VDS = 10 V *
Input capacitance Ciss — 80 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 40 — pF f = 1 MHz
Reverse transfer capacitance Crss — 7 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Notes: 1. Pulse test
2. Marking for 2SK1334 is “BY”.
200 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 160 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 2.5 3.8 Ω ID = 0.5 A, VGS = 10 V *
— 4.5 7.0 Ω ID = 2 A, VGS = 10 V *
—5 —nsI
—8 —nsR
= 0.5 A, VGS = 10 V,
D
= 60 Ω
L
—10—ns
—7 —ns
— 1.0 — V IF = 1 A, VGS = 0
— 75 — ns IF = 1 A, VGS = 0,
di
/dt = 50 A/µs
F
1
1
1
3
Page 4
2SK1334
(°C)
Power vs. Temperature Derating
1.2
Test Condition:
When using alumina
ceramic board(12.5×20×0.7mm)
0.8
0.4
Channel Dissipation Pch (W)
0 50 100 150
Ambient Temperature Ta
Typical Output Characteristics
2.0
(A)
D
10 V
1.6
1.2
7 V
6 V
8 V
Pulse Test
Maximum Safe Operation Area
5
2
DS (on)
1
PW = 10 ms (1 Shot)
Operation in this area
(A)
0.5
D
is limited by R
DC Operation (T
1 ms
0.2
0.1
0.05
Drain Current I
0.02
Ta = 25°C
0.01
0.005
1 3 30 300
C
= 25°C)
10 100 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
2.0
1.6
V
= 10 V
DS
D
Pulse Test
1.2
(A)
100 µs
10 µs
DS
(V)
0.8
Drain Current I
0.4
0
Drain to Source Voltage V
5 V
V
= 3 V
GS
4 V
41216
820
(V)
DS
0.8
Drain Current I
0.4
0
Gate to Source Voltage V
75°C
TC = 25°C
–25°C
268
4
GS
10
(V)
4
Page 5
2SK1334
Drain to Source Saturation Voltage
(V)
20
DS (on)
vs. Gate to Source Voltage
Pulse Test
16
12
ID = 2 A
8
4
412160
Drain to Source Saturation Voltage V
Drain to Source Voltage V
820
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 2 A
8
6
(Ω)
DS (on)
4
R
V
= 10 V
GS
Pulse Test
2
0.5 A
GS
1 A
(V)
1 A
0.5 A
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
(Ω)
5
DS (on)
R
V
= 10 V
GS
2
1
0.5
Static Drain to Source on State Resistance
0.1 0.5 20.05
0.2 5
Drain Current I
1
D
(A)
Forward Transfer Admittance
vs. Drain Current
5
V
= 10 V
DS
Pulse Test
2
1
–25°C
TC = 25°C
75°C
0.5
0.2
0.1
15 V
0
Static Drain to Source on State Resistance
–40
Case Temperature T
40 160
0 80 120
(°C)
C
Forward Transfer Admittance yfs (S)
0.05
0.1 1
Drain Current I
0.5 2
0.2 5
(A)
D
5
Page 6
2SK1334
Reverse Recovery Time vs.
Reverse Drain Current
500
di/dt = 50 A/µs, Ta = 25°C
V
= 0
200
GS
(ns)
rr
100
50
20
10
Reverse Recovery Time t
5
0.05 1
0.2 5
Reverse Drain Current I
Dynamic Input Characteristics
500
VDD = 150 V
(V)
400
DS
300
200
100
Drain to Source Voltage V
0
100 V
50 V
V
V
DS
VDD = 150 V
100 V
50 V
2608
410
Gate Charge Qg (nc)
0.5 20.1
GS
ID = 1 A
DR
(A)
1,000
100
10
Capacitance C (pF)
1
(V)
GS
100
50
20
16
20
12
10
8
4
Gate to Source Voltage V
0
5
Switching Time t (ns)
2
1
0.05
Typical Capacitance vs.
Drain to Source Voltage
V
= 0
GS
f = 1 MHz
10 30 40
0
20 50
Drain to Source Voltage V
Switching Characteristics
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty < 1%
t
f
t
d (off)
t
r
0.1 0.5 2
0.2 5
Drain Current I
Ciss
Coss
Crss
1
(A)
D
t
d (on)
DS
(V)
6
Page 7
Reverse Drain Current vs.
2.0
(A)
1.6
DR
1.2
0.8
0.4
Reverse Dratin Current I
0
0
Source to Drain Voltage
Pulse Test
10 V, 15 V
0.4 0.8 1.6
Source to Drain Voltage V
VGS = 0, –5 V
1.2
SD
2SK1334
2.0
(V)
7
Page 8
Unit: mm
0.53 Max
0.48 Max
4.5 ± 0.1
1.8 Max
φ
1.5
1.5
3.0
0.4
1.5 ± 0.1
0.44 Max
(1.5)
1
(2.5)
2.5 ± 0.1
4.25 Max
0.44 Max
(0.4)
(0.2)
0.8 Min
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
UPAK
—
Conforms
0.050 g
Page 9
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