Datasheet 2SK1317 Datasheet (HIT)

Application

High speed power switching

Features

2SK1317

Silicon N-Channel MOS FET

• High breakdown voltage V

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator, DC-DC converter and motor driver

= 1500 V

DSS

Outline

TO-3P

D

G

S

1

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK1317

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 125 — pF f = 1 MHz
Reverse transfer capacitance Crss — 60 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

1500 — — V ID = 10 mA, VGS = 0

——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS = 1200 V, VGS = 0

2.0 — 4.0 V ID = 1 mA, VDS = 10 V
—9 12Ω I

— 17 — ns ID = 2 A, VGS = 10 V,
— 70 — ns RL = 15 Ω
— 110 — ns
—60—ns
— 0.9 — V IF = 2 A, VGS = 0

— 1750 — ns IF = 2 A, VGS = 0,

1500 V
±20 V

2.5 A
7A

2.5 A
100 W

= 2 A, VGS = 15 V *

D

di

/dt = 100 A/µs

F

1

1

2

2SK1317

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

(A)

D

5

4

3

Pulse Test

15 V

10 V

8 V

7 V

10

Maximum Safe Operation Area

10 µs

100 µs

1 ms

C

= 25°C)

(A)

1.0

D

0.3

3

PW = 10 ms (1 Shot)

DC Operation (T

0.1

Drain Current I

Operation in this area
is limited by R

0.03

DS (on)

Ta = 25°C

0.01
10 30 300 3,000

100 1,000 10,000

Drain to Source Voltage V

Typical Transfer Characteristics

2.0

V

= 20 V

DS

Pulse Test

(A)

D

1.6

1.2

DS

(V)

2

Drain Current I

1

0

20 60 80

Drain to Source Voltage V

6 V

5 V

V

= 4 V

GS

40 100

(V)

DS

0.8

0.4

TC = 25°C

–25°C

Drain Current I

0

Gate to Source Voltage V

75°C

268

4

GS

10

(V)

3

2SK1317

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

50

DS (on)

Pulse Test

40

ID = 3 A

30

20

10

0.5 A

412160

Drain to Source Saturation Voltage V

820

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

20

ID = 2 A

V

= 15 V

GS

16

Pulse Test

2 A

1 A

GS

(V)

Static Drain to Source on State

Resistance vs. Drain Current

50

20

V

GS

= 10 V

10

(Ω)

5

DS (on)

R

2

Pulse Test

1.0

0.5

Static Drain to Source on State Resistance

0.2 1.0 50.1

0.5 10

Drain Current I

2

D

(A)

Forward Transfer Admittance

vs. Drain Current

10

V

= 20 V

DS

5

Pulse Test

15 V

12

(Ω)

DS (on)

8

R

0.5 A, 1 A

4

0

Static Drain to Source on State Resistance

–40

Case Temperature T

40 160

0 80 120

(°C)

C

2

–25°C

Ta = 25°C

1.0

75°C

0.5

0.2

Forward Transfer Admittance yfs (S)

0.1

0.1 5

0.05 0.2 1.0
Drain Current I

0.5 2
(A)

D

4

2SK1317

Body to Drain Diode Reverse

Recovery Time

5,000

(ns)

2,000

rr

1,000

500

di/dt = 100 A/µs, Ta = 25°C

200

V

= 0

GS

Pulse Test

100

Reverse Recovery Time t

50

0.1 5

0.05 0.2 1.0
Reverse Drain Current I

Dynamic Input Characteristics

1,000

(A)

DS

800

600

V

DS

VDD = 250V

400 V
600 V

400

VDD = 600 V

200

Drain to Source Voltage V

400 V
250 V

40 100

20 60080

Gate Charge Qg (nc)

0.5 2

DR

V

GS

ID = 2.5 A

(A)

10,000

1,000

100

Capacitance C (pF)

10

(V)

GS

1,000

500

20

16

200

12

100

8

4

Gate to Source Voltage V

0

50

Switching Time t (ns)

20

10

0.05

Typical Capacitance vs.
Drain to Source Voltage

20 50

10 30 40

0

Drain to Source Voltage V

Switching Characteristics

VGS = 10 V VDD = 30 V

•

•

PW = 2µs, duty < 1%

t

d (off)

t

f

t

r

t

d (on)

0.1 0.5 2

0.2 5

Drain Current I

Ciss

Coss
Crss

1.0
(A)

D

V

= 0

GS

f = 1 MHz

(V)

DS

5

2SK1317

Reverse Drain Current vs.

Source to Drain Voltage

5

Pulse Test

(A)

4

DR

3

2

1

10 V, 15 V

Reverse Drain Current I

VGS = 0, –5 V

0

0.8 2.0

0.4 1.2 1.6

0

Source to Drain Voltage VSD (V)

(t)

S

3

D = 1

1.0

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

1 Shot Pulse

0.01
10 µ

Normalized Transient Thermal Impedance γ

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

Vout Monitor

t

d (on)

Vin

Vout

D.U.T

R

L

V

DD

.

=

30 V

.

θch–c (t) = γ
θch–c = 1.25°C/W, T

P

DM

(t) · θch–c

S

PW

T

Waveforms

10%

10%

90%

t

t

d (off)

r

90%

T

C

= 25°C

= 25°C

C

D =

90%

PW

T

10%

t

f

6

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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