Datasheet 2SK1303 Datasheet (HIT)

2SK1303

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1303

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

100 V
±20 V
30 A
120 A
30 A
100 W

2

2SK1303

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 13 22 — S ID = 15 A, VDS = 10 V *
Input capacitance Ciss — 1750 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 710 — pF f = 1 MHz
Reverse transfer capacitance Crss — 180 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

100 — — V ID = 10 mA, VGS = 0

±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 80 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.05 0.06 Ω ID = 15 A, VGS = 10 V *

— 0.06 0.09 Ω ID = 15 A, VGS = 4 V *

— 15 — ns ID = 15 A, VGS = 10 V,
— 120 — ns RL = 2 Ω
— 390 — ns
— 195 — ns
— 1.3 — V IF = 30 A, VGS = 0

— 360 — ns IF = 30 A, VGS = 0,

di

/dt = 50 A/µs

F

1

1

1

3

2SK1303

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

(A)

D

50

40

30

10 V

5 V
7 V

4 V

Pulse Test

3.5 V

500

Maximum Safe Operation Area

200
100

(A)

50

D

20

DC Operation (T

10

5

Drain Current I

2

Operation in this Area

1.0

is Limited by R

0.5
1

3 30 300

Drain to Source Voltage V

Typical Transfer Characteristics

50

V

DS

Pulse Test

40

(A)

D

30

10 µs

100 µs

PW = 10 ms (1 Shot)

1 ms

C

= 25°C)

Ta = 25°C

DS (on)

10 100 1,000

(V)

DS

= 10 V

20

Drain Current I

10

Drain to Source Voltage V

3 V

V

= 2.5 V

GS

412160

820

(V)

DS

20

Drain Current I

10

0

TC = 25°C

134

Gate to Source Voltage V

75°C

–25°C

25

(V)

GS

4

2SK1303

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

5

DS (on)

4

3

Pulse Test

I

2

1

410

Drain to Source Saturation Voltage V

2680

Gate to Source Voltage V

GS

Static Drain to Source on State

Resistance vs. Temperature

0.20

Pulse Test

0.16

V

GS

ID = 20 A

= 10 V

(Ω)

DS (on)

R

0.12

0.08

0.04

V

= 4 V

GS

= 50 A

D

(V)

10 A

20 A
10 A

10 A

50 A

20 A

Static Drain to Source on State

Resistance vs. Drain Current

0.5
Pulse Test

0.2

V

= 4 V

GS

0.1

10 V

(Ω)

0.05

DS (on)

R

0.02

0.01

0.005

Static Drain to Source on State Resistance

5 20 1002

10 200

Drain Current I

D

50

(A)

Forward Transfer Admittance

vs. Drain Current

50

20

10

5

–25°C
TC = 25°C

75°C

2

V

= 10 V

GS

1.0

Pulse Test

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

Case Temperature T

(°C)

C

Forward Transfer Admittance yfs (S)

0.5

1.0 20

250

Drain Current I

105

D

(A)

5

2SK1303

Body to Drain Diode Reverse

Recovery Time

5,000

di/dt = 50 A/µs, Ta = 25°C
V

= 0

2,000

(ns)

rr

GS

Pulse Test

1,000

500

200

100

Reverse Recovery Time t

50

0.5

1.0 10 50

2

Reverse Drain Current IDR (A)

Dynamic Input Characteristics

100

(V)

DS

80

V

DS

60

V

= 80 V

40

20

Drain to Source Voltage V

DD

50 V
25 V

40 100

20 60 800

Gate Charge Qg (nc)

Typical Capacitance vs.

Drain to Source Voltage

10,000

V

= 0

GS

f = 1 MHz

Ciss

1,000

Coss

100

Crss

Capacitance C (pF)

5

20

10

10 30 40

0

Drain to Source Voltage V

20 50

(V)

DS

Switching Characteristics

(V)

GS

1,000

500

200

t

d (off)

t

f

20

V

= 25 V

DD

50 V

80 V

16

12

100

V

GS

ID = 30 A

8

4

50

Switching Time t (ns)

20

Gate to Source Voltage V

0

10

0.5

t

r

V

= 10 V, VDD 30 V

GS

PW = 2 µs, duty < 1%

t

d (on)

250

1.0 5 20

10

.

=

.

Drain Current ID (A)

6

(A)

DR

50

40

30

2SK1303

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

(t)

S

Normalized Transient Thermal Impedance γ

3

1.0

0.3

0.1

0.03

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

20

10

Reverse Drain Current I

0

10 V

5 V

V

= 0, –10 V

GS

0.4 1.2 1.6

0.8 2.0

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

TC = 25°C

θch–c (t) = γ
θch–c = 1.25°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin = 10 V

D.U.T

Vout Monitor

R

L

.

= 30 V

V

.

DD

Vin

Vout

t

d (on)

10 %

10 %

90 %
t

r

Wavewforms

t

d (off)

90 %

90 %

10 %

t

f

7

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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