Datasheet 2SK1302 Datasheet (HIT)

2SK1302

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK1302

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

(BR)DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

100 V
±20 V
20 A
80 A
20 A
50 W

2

2SK1302

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V *
Input capacitance Ciss — 1300 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 540 — pF f = 1 MHz
Reverse transfer capacitance Crss — 160 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

100 — — V ID = 10 mA, VGS = 0

±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 80 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.065 0.085 Ω ID = 10 A, VGS = 10 V *

— 0.085 0.12 Ω ID = 10 A, VGS = 4 V *

— 12 — ns ID = 10 A, VGS = 10 V,
— 100 — ns RL = 3 Ω
— 300 — ns
— 150 — ns
— 1.3 — V IF = 20 A, VGS = 0

— 300 — ns IF = 20 A, VGS = 0,

di

/dt = 50 A/µs

F

1

1

1

3

2SK1302

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

50 1000

Case Temperature T

Typical Output Characteristics

50

10 V

7 V
5 V

40

30

4 V

3.5 V

(°C)

C

Pulse Test

150

100

Maximum Safe Operation Area

30

10

DC Operation (T

(A)

D

3

1

Drain Current I

0.3

Operation in this area

is limited by R

0.1
1

Drain to Source Voltage V

Typical Transfer Characteristics

20

VDS = 10 V

Pulse Test

16

(A)

D

12

10 µs

Ta = 25°C

100 µs

1 ms

PW = 10 ms (1 Shot)

C

= 25°C)

DS (on)

10 1000

DS

300100303

(V)

20

Drain Current ID (A)

10

0

Drain to Source Voltage V

3 V

VGS = 2.5 V

DS

(V)

8

Drain Current I

4

20161284

0

75°C

T

= 25°C

C

–25°C

3

Gate to Source Voltage V

42105

(V)

GS

4

2SK1302

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

1.6

1.2

(V)

(on)
DS

0.8

V

0.4

Drain to Source Saturation Voltage

0

6

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

0.20

(Ω)

R

0.16

0.12

(on)

0.08

DS

Pulse Test

VGS = 4 V

ID = 20 A

VGS = 10 V

0.04

Static Drain to Source on State

0.5

Pulse Test

ID = 20 A

0.2

0.1

(Ω)

0.05

(on)

10 A

DS

R

0.02

5 A

842010

(V)

GS

0.01

0.005

Static Drain to Source on State Resistance

2

Forward Transfer Admittance

50

20

10 A

10

5 A

5

20 A

5 A, 10 A

2

1

Resistance vs. Drain Current

Pulse Test

VGS = 4 V

10 V

50105 200

D

100

(A)

20

Drain Current I

vs. Drain Current

–25°C

T

= 25°C

C

75°C

VDS = 10 V
Pulse Test

0

Static Drain to Source on State Resistance

–40

Case Temperature T

80

C

120400

(°C)

160

Forward Transfer Admittance yfs (S)

0.5

0.2

0.5 1.0
Drain Current I

20

10

5

2

(A)

D

5

2SK1302

Body to Drain Diode Reverse

Recovery Time

1000

500

(ns)

rr

200

100

50

20

Reverse Recovery Time t

di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test

10

0.5 1.0 5
Reverse Drain Current I

Dynamic Input Characteristics

100

V

80

DS

VDD = 25 V

50 V

80 V

(V)

DS

60

40

20

Drain to Source Voltage V

VDD = 80 V
50 V
25 V

0

20 60

40

Gate Charge Qg (nc)

V

GS

10220

(A)

DR

ID = 20 A

80

100

Capacitance C (pF)

50

20

(V)

16

GS

12

8

4

Switching Time t (ns)

Gate to Source Voltage V

0

Typical Capacitance vs.
Drain to Source Voltage

10000

1000

100

10

01020

Drain to Source Voltage VDS (V)

Switching Characteristics

1000

500

200

100

50

20
10

0.5 1.0 5

Ciss

Coss

Crss

30 40

td

(off)

t

f

t

r

VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %

t

d (on)

10220

Drain Current I

D

VGS = 0
f = 1 MHz

(A)

50

•

•

50

6

20

16

(A)

DR

2SK1302

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

3

D = 1

1.0

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.01

0.03

1 Shot Pulse

0.01
10 µ 1 m

Normalized Transient Thermal Impedance γs (t)

100 µ

12

8

4

Reverse Drain Current I

0 0.4 1.2

10 V

5 V

VGS = 0, –5V

0.8

Source to Drain Voltage V

1.6

SD

2.0

(V)

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γs (t) · θch–c
θch–c = 2.50°C/W, T

P

DM

10 m

100 m

Pulse Width PW (s)

TC = 25°C

= 25°C

C

PW

D =

PW

T

T

110

Switching Time Test Circuit
Vin Monitor

50 Ω

Vin = 10 V

D.U.T

Vout Monitor

R

L

.

= 30 V

V

.

DD

t

d (on)

Vin

Vout

10 %

10 %

90 %
t

r

Wavewforms

t

d (off)

90 %

90 %

10 %

t

f

7

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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