Datasheet 2SK1298 Datasheet (HIT)

2SK1298

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-3PFM

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1298

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

60 V
±20 V
40 A
160 A
40 A
50 W

2

2SK1298

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

60——V I

voltage
Gate to source breakdown

V

(BR)GSS

±20——V I

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.015 0.018 Ω ID = 20 A, VGS = 10 V *

resistance

— 0.02 0.025 Ω ID = 20 A, VGS = 4 V *
Forward transfer admittance |yfs| 22 35 — S ID = 20 A, VDS = 10 V *
Input capacitance Ciss — 3600 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1850 — pF f = 1 MHz
Reverse transfer capacitance Crss — 450 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

— 30 — ns ID = 20 A, VGS = 10 V,

— 170 — ns RL = 1.5 Ω

— 700 — ns

— 350 — ns

— 1.2 — V IF = 40 A, VGS = 0
voltage

Body to drain diode reverse

t

rr

— 155 — ns IF = 40 A, VGS = 0,
recovery time

Note: 1. Pulse test

= 10 mA, VGS = 0

D

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

3

2SK1298

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

50 1000

Case Temperature T

Typical Output Characteristics

100

10 V

8 V

80

4.5 V
5 V

60

4 V

3.5 V

(°C)

C

Pulse Test

150

500

Maximum Safe Operation Area

200
100

(A)

50

D

20
10

5

Drain Current I

Operation in this area

2

is limited by R

1.0

0.5

Ta = 25°C

0.1
Drain to Source Voltage V

Typical Transfer Characteristics

100

VDS = 10 V

80

Pulse Test

(A)

D

60

PW = 10 ms (1 Shot)

DC Operation (T

C

= 25°C)

DS (on)

100 µs

1 ms

DS

30

(V)

10 µs

1001031.00.3

40

Drain Current ID (A)

20

VGS = 2.5 V

0

Drain to Source Voltage V

3 V

DS

(V)

40

Drain Current I

20

108642

0

75°C

T

= 25°C

C

–25°C

3

Gate to Source Voltage V

42105

(V)

GS

4

2SK1298

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

1.6

1.2

(V)

(on)
DS

0.8

V

0.4

Drain to Source Saturation Voltage

0

6

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

0.05

Pulse Test

0.04
ID = 50 A

10 A, 20 A

VGS = 10 V

(Ω)

R

(on)
DS

0.03

0.02

0.01

VGS = 4 V

0.5

Pulse Test

0.2

0.1

(Ω)

(on)

0.05

ID = 50 A

20 A
10 A

842010

(V)

GS

DS

R

0.02

0.01

0.005

Static Drain to Source on State Resistance

2

50

20

10

5

50 A

2

10 A, 20 A

1.0

Static Drain to Source on State

Resistance vs. Drain Current

Pulse Test

VGS = 4 V

10 V

50105 200

20

Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

–25°C

TC = 25°C

75°C

VDS = 10 V
Pulse Test

100

0

Static Drain to Source on State Resistance

–40

Case Temperature T

80

(°C)

C

120400

160

Forward Transfer Admittance yfs (S)

0.5

1.0 2
Drain Current I

20

10

5

(A)

D

50

5

2SK1298

)

Body to Drain Diode Reverse

Recovery Time

500

(ns)

200

rr

100

50

20

10

Reverse Recovery Time t

di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test

5

0.5 1.0 5
Reverse Drain Current I

Dynamic Input Characteristics

100

(V)

80

DS

60

40

V

DS

VDD = 10 V

50 V

20

Drain to Source Voltage V

0 40 120

25 V
VDD = 10 V

80

Gate Charge Qg (nc

25 V

50 V

10220

DR

V

GS

ID = 40 A

160

(A)

50

200

10000

1000

Capacitance C (pF)

(V)

GS

1000

500

20

16

200

12

100

8

4

Switching Time t (ns)

Gate to Source Voltage V

0

Typical Capacitance vs.
Drain to Source Voltage

Ciss

100

10

01020

Drain to Source Voltage VDS (V)

Switching Characteristics

td

(off)

t

f

t

r

50

t

d (on)

20

VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %

10

0.5 1.0 5
Drain Current I

Coss

Crss

30 40

10220

(A)

D

VGS = 0
f = 1 MHz

•

•

50

50

6

100

(A)

DR

80

2SK1298

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

3

D = 1

1.0

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

0.01

Normalized Transient Thermal Impedance γs (t)

1 Shot Pulse

10 µ 1 m

100 µ

60

5 V

10 V

40

20

Reverse Drain Current I

0 0.4 1.2

Source to Drain Voltage V

0.8

VGS = 0, – 5 V

1.6

SD

2.0

(V)

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γs (t) · θch–c
θch–c = 2.50°C/W, T

P

DM

T

10 m

100 m

Pulse Width PW (s)

TC = 25°C

= 25°C

C

PW

D =

PW

T

110

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin = 10 V

D.U.T

Vout Monitor

R

L

.

= 30 V

V

.

DD

Vin

Vout

t

d (on)

10 %

10 %

90 %
t

r

Wavewforms

t

d (off)

90 %

90 %

10 %

t

f

7

Unit: mm

4.0

2.6

1.4 Max

5.45 ± 0.5

15.6 ± 0.3

+ 0.4

φ3.2

– 0.2

5.0 ± 0.3

2.7

1.6

1.4 Max

1.0 ± 0.2

5.45 ± 0.5

5.0

5.5 ± 0.3

19.9 ± 0.3

3.2

21.0 ± 0.5

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3PFM
—
—

5.6 g

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