Datasheet 2SK1195 Datasheet (Shindengen)

SHINDENGEN

Item

Symbol

Conditions

Ratings

Unit

T

-55〜150

℃

V

230

V

ID1.5

IS1.5

VR Series Power MOSFET

2SK1195

( F1E23 )

230V 1.5A

FEATURES

● Applicable to 4V drive.

● The static Rds(on) is small.

● Built-in ZD for Gate Protection.

APPLICATION

● DC/DC converters

● Power supplies of DC 12-24V input

● Product related to

Integrated Service Digital Network

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : E-pack

(Unit : mm)

RATINGS

●AbsoluteMaximumRatings（Tc=25℃）

StorageTemperature
Channel Temperature T
Drain-SourceVoltage
Gate-SourceVoltage V
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak) I
ContinuousSourceCurrent（DC）
TotalPowerDissipation P

stg

ch
DSS
GSS

DP

T

150

±20

3 A

10 W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

VR Series Power MOSFET

●Electrical Characteristics Tc = 25℃

Item Symbole Conditions Min. Typ. Max. Unit

(BR)DSSID

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

V

DS(ON)ID

R

V

θjc

C

I

DSS

I

GSS

fs

g

THID

SDIS

V

Qg

C

iss

rss

C

oss

on

t

off

t

= 250μA, VGS = 0V

VDS = 230V, VGS = 0V
VGS = ±20V, VDS = 0V
ID = 1.5A, VDS = 10V

= 1.5A, VGS = 10V

= 0.2mA, VDS = 10V

= 1.5A, VGS = 0V

junction to case
VGS = 10V, ID = 1.5A, VDD = 200V

VDS = 10V, VGS = 0V, f = 1MH

ID = 1.5A, VGS = 10V, RL = 67Ω

Z

2SK1195 ( F1E23 )

230 V

250 μA

±0.1

0.7 1.4 S

1.2 2 Ω

234V

1.5

12.5 ℃/Ｗ

6.9 nC

160

20 pF
90
37 75 ns
50 100

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK1195 Transfer Characteristics

3

Tc = −55°C

2.5

[A]

D

1.5

2

1

25°C
100°C
150°C

Drain Current I

0.5
VDS = 10V

pulse test
TYP

0

0 2 4 6 8 10

Gate-Source Voltage VGS [V]

2SK1195

10

[Ω]

DS(ON)

1

Static Drain-Source On-state Resistance

ID = 1.5A

Static Drain-Source On-state Resistance R

0.1

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP

[V]

TH

2SK1195

5

4

3

2

Gate Threshold Voltage

Gate Threshold Voltage V

1

0

-50 0 50 100 150

Case Temperature Tc [°C]

VDS = 10V
ID = 0.2mA
TYP

2SK1195

3

Safe Operating Area

1

R

DS(ON)

limit

[A]

D

0.1

Drain Current I

100µs

200µs

1ms

10ms

DC

Tc = 25°C

Single Pulse

0.01
1 10 100

Drain-Source Voltage VDS [V]

230

Transient Thermal Impedance

0

10

-1

10

-2

10

Time t [s]

2SK1195

10

-3

10

-4

1

10

0.1

Transient Thermal Impedance θjc(t) [°C/W]

1000

0.005

Tc=25°C

TYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

100

2SK1195

Capacitance

10

Capacitance Ciss Coss Crss [pF]

1

0 50 100 150 200

2SK1195 Power Derating

100

80

60

40

Power Derating [%]

20

0

0 50 100 150

Case Temperature Tc [°C]

2SK1195

Gate Charge Characteristics

250

200

V

DS

[V]

DS

150

100

Drain-Source Voltage V

50

VDD = 200V

100V

V

20

15

[V]

GS

10

GS

5

Gate-Source Voltage V

ID = 1.5A

0

0 2 4 6 8 10

Gate Charge Qg [nC]

0