Datasheet 2SK1194 Datasheet (Shindengen)

SHINDENGEN

Item

Symbol

Conditions

Ratings

Unit

T

-55〜150

℃

V

230

V

ID0.5

IS0.5

VR Series Power MOSFET

2SK1194

( F05E23 )

230V 0.5A

FEATURES

● Applicable to 4V drive.

● The static Rds(on) is small.

● Built-in ZD for Gate Protection.

APPLICATION

● DC/DC converters

● Power supplies of DC 12-24V input

● Product related to

Integrated Service Digital Network

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : E-pack

(Unit : mm)

RATINGS

●AbsoluteMaximumRatings（Tc=25℃）

StorageTemperature
Channel Temperature T
Drain-SourceVoltage
Gate-SourceVoltage V
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak) I
ContinuousSourceCurrent（DC）
TotalPowerDissipation P

stg

ch
DSS
GSS

DP

T

150

±20

1 A
6 W

Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd

●Electrical Characteristics Tc = 25℃

Item Symbole Conditions Min. Typ. Max. Unit

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

V

R

(BR)DSSID

I

DSS

VDS = 230V, VGS = 0V

I

GSS

VGS = ±20V, VDS = 0V

g

ID = 0.5A, VDS = 10V

fs

DS(ON)ID

V

THID

V

SDIS

θjc

Qg
C
C

C

t

t

junction to case
VGS = 10V, ID = 0.5A, VDD = 200V

iss

VDS = 10V, VGS = 0V, f = 1MH

rss

oss

ID = 0.5A, VGS = 10V, RL = 200Ω

on

off

= 250μA, VGS = 0V

= 0.5A, VGS = 10V

= 0.2mA, VDS = 10V

= 0.5A, VGS = 0V

2SK1194 ( F05E23 )VR Series Power MOSFET

230 V

250 μA

±0.1

0.2 0.4 S

5.5 8 Ω

234V

1.5

20.8 ℃/Ｗ

2.7 nC
45

Z

4.5 pF
30
30 60 ns
50 100

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK1194 Transfer Characteristics

1

0.8

[A]

D

0.6

0.4

Drain Current I

0.2

Tc = −55°C

25°C
100°C
150°C

VDS = 10V
pulse test

TYP

0

0 2 4 6 8 10

Gate-Source Voltage VGS [V]

2SK1194

[Ω]

DS(ON)

10

Static Drain-Source On-state Resistance

ID = 0.5A

Static Drain-Source On-state Resistance R

1

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP

[V]

TH

2SK1194

5

4

3

2

Gate Threshold Voltage

Gate Threshold Voltage V

1

0

-50 0 50 100 150

Case Temperature Tc [°C]

VDS = 10V
ID = 0.2mA
TYP

[A]

D

0.1

2SK1194

1

R

DS(ON)

limit

Safe Operating Area

100µs

200µs

1ms

Drain Current I

Tc = 25°C

Single Pulse

0.01
1 10 100

Drain-Source Voltage VDS [V]

10ms

DC

230

Transient Thermal Impedance

0

10

-1

10

-2

10

Time t [s]

2SK1194

100

10

-3

10

-4

10

1

Transient Thermal Impedance θjc(t) [°C/W]

1000

0.005

Tc=25°C

TYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

100

2SK1194

Capacitance

10

Capacitance Ciss Coss Crss [pF]

1

0 50 100 150 200

2SK1194 Power Derating

100

80

60

40

Power Derating [%]

20

0

0 50 100 150

Case Temperature Tc [°C]

2SK1194

Gate Charge Characteristics

250

200

[V]

DS

150

100

Drain-Source Voltage V

50

VDD = 200V

V

DS

100V

V

GS

20

15

[V]

GS

10

5

Gate-Source Voltage V

ID = 0.5A

0

0 1 2 3 4 5

Gate Charge Qg [nC]

0