Datasheet 2SK1058, 2SK1057, 2SK1056 Datasheet (HIT)

2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SJ160, 2SJ161 and 2SJ162

Features

• Good frequency characteristic

• High speed switching

• Wide area of safe operation

• Enhancement-mode

• Good complementary characteristics

• Equipped with gate protection diodes

• Suitable for audio power amplifier

2SK1056, 2SK1057, 2SK1058

Outline

TO-3P

D

G

S

1

2

3

1. Gate

2. Source
(Flange)

3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1056 V

DSX

2SK1057 140

2SK1058 160
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

DR

1

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

120 V

±15 V
7A
7A
100 W

2

2SK1056, 2SK1057, 2SK1058

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1056 V

(BR)DSX

breakdown voltage 2SK1057 140

2SK1058 160

Gate to source breakdown

V

(BR)GSS

voltage
Gate to source cutoff voltage V
Drain to source saturation

V

GS(off)

DS(sat)

voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V *
Input capacitance Ciss — 600 — pF VGS = –5 V, VDS = 10 V,
Output capacitance Coss — 350 — pF f = 1 MHz
Reverse transfer capacitance Crss — 10 — pF
Turn-on time t
Turn-off time t

on

off

Note: 1. Pulse test

120 — — V ID = 10 mA, VGS = –10 V

±15——V I

= ±100 µA, VDS = 0

G

0.15 — 1.45 V ID = 100 mA, VDS = 10 V
——12V I

= 7 A, VGD = 0 *

D

1

— 180 — ns VDD = 20 V, ID = 4 A,
—60—ns

1

3

2SK1056, 2SK1057, 2SK1058

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

Case Temperature T

Typical Output Characteristics

10

8

(A)

D

6

4

Drain Current I

2

0

0

Drain to Source Voltage V

50 1000

VGS = 10 V
9

8

7

6

5

4

30

(°C)

C

TC = 25°C

Pch = 100 W

3

402010 50

(V)

DS

150

2
1

0

Maximum Safe Operation Area

20

Ta = 25°C

10

ID

(Continuous)

(A)

D

max

5

DC Operation (T

2

PW = 10 ms 1 shot

PW = 100 ms 1 shot

PW = 1 s 1 shot

C

= 25°C)

1.0

Drain Current I

0.5
2SK1056 2SK1057

0.2

5 500

10 20 50

Drain to Source Voltage V

100

DS

Typical Transfer Characteristics

1.0

VDS = 10 V

0.8

= –25°C

(A)

D

0.6

C

T

0.4

Drain Current I

0.2

0

Gate to Source Voltage V

1.2

1.60.80.40 2.0

GS

2SK1058

200

(V)

25

75

(V)

4

2SK1056, 2SK1057, 2SK1058

Drain to Source Saturation

Voltage vs. Drain Current

10

VGD = 0

5

25

2

(V)

1.0

(on)
DS

V

0.5

0.2

Drain to Source Saturation Voltage

0.1

0.1

1.0

Drain Current I

Input Capacitance vs. Gate

Source Voltage

1000

500

°C 75°C

T

20.50.2 5
(A)

D

= –25°C

C

10

Drain to Source Voltage vs.

Gate to Source Voltage

10

(V)

8

DS

TC = 25°C

6

4

2

Drain to Source Voltage V

0

Gate to Source Voltage V

I

D

6

GS

Forward Transfer Admittance

vs. Frequency

3.0

1.0

0.3

5A

2A

= 1 A

842010

(V)

200

Input Capacitance Ciss (pF)

100

0–2–4

Gate to Source Voltage VGS (V)

VDS = 10 V
f = 1 MHz

–6 –8

–10

0.1

0.03

0.01

0.003

Forward Transfer Admittance  yfs  (S)

10 k 30 k 100 k

TC = 25°C
V

= 10 V

DS

I

= 2 A

D

300 k

Frequency f (Hz)

1 M

3 M

10 M

5

2SK1056, 2SK1057, 2SK1058

Switching Time vs. Drain Current

500

200

100

50

20

10

Switching Time ton,toff (ns)

5

0.1 0.2 0.5
Drain Current I

Switching Time Test Circuit

Input

PW = 50µs

duty ratio

= 1 %

50 Ω

1.0

Output

t

on

t

off

2

(A)

D

RL= 2 Ω

5

10

20 V

Waveforms

90 %

Input

10 %

t

on

t

off

10 %

Output

90 %

6

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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