Page 1
Silicon MOS FETs (Small Signal)
G
D
S
2SK0620 (2SK620)
Silicon N-Channel MOS FET
For switching
+0.2
2.8
–0.3
+0.25
1.5
0.65±0.15 0.65±0.15
–0.05
unit: mm
■ Features
● High-speed switching
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
*
ton, t
measurement circuit
off
= 5V
V
GS
50Ω
V
out
200Ω
100µF
V
DD
Symbol
I
DSS
I
GSS
V
V
R
| Yfs |
C
C
C
t
on
t
off
= 5V
DSS
th
DS(on)
iss
oss
rss
*
*
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = V
GS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
90%
V
in
V
out
10%
10%
90%
1
0.950.95
+0.2
–0.05
2.9
1.9±0.2
2
+0.2
–0.1
0.8
1.1
0.1 to 0.3
0.4±0.2
1: Gate JEDEC: TO-236
2: Source EIAJ: SC-59
3: Drain Mini Type Package (3-pin)
1.45
3
+0.1
+0.1
0 to 0.1
Marking Symbol: 3N
Internal Connection
min
50
1.5
20
typ
30
10
20
max
10
50
3.5
50
15
5
1
Unit
–0.05
0.4
–0.06
0.16
µA
nA
V
V
Ω
mS
pF
pF
pF
ns
ns
t
ontoff
Note) The part number in the parenthesis shows conventional part number.
281
Page 2
Silicon MOS FETs (Small Signal)
2SK0620
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
C
, C
, C
iss
oss
rss
12
)
,
)
pF
(
10
rss
,C
Common source
(
oss
,C
8
iss
C
)
6
, Output capacitance
)
Common source
(
4
Common source
(
2
V
C
iss
C
oss
DS
VGS=0
f=1MHz
Ta=25˚C
DS
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
012108264
)
Drain to source voltage VDS (V
ID V
120
100
GS
Ta=25˚C
VGS=6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
=5V
DS
Ta=25˚C
)
)
mA
(
80
D
60
40
Ta=–25˚C
25˚C
75˚C
60
)
mS
(
50
|
fs
40
30
20
10
Forward transfer admittance |Y
0
120
)
Ω
(
100
DS(on)
80
60
40
Drain current I
20
20
| Yfs | V
012108264
GS
VDS=5V
Ta=25˚C
Gate to source voltage VGS (V
R
V
DS(on)
GS
ID=20mA
Ta=75˚C
25˚C
–25˚C
)
Input capacitance
Reverse transfer capacitance
0
1 3 10 30 100
Drain to source voltage VDS (V
VIN I
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 1 10 1000.3 3 30
Output current IO (mA
C
O
rss
VO=5V
Ta=25˚C
)
0
012108264
)
Gate to source voltage VGS (V
Drain to source ON-resistance R
0
012108264
)
Gate to source voltage VGS (V
)
282
Page 3
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2001 MAR
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