Page 1
Silicon Junction FETs (Small Signal)
2SK198
Silicon N-Channel Junction FET
For low-frequency amplification
■ Features
●High mutual conductance g
●Low noise type
●Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
m
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
−30
20
10
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
*
I
DSS
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 0.5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
0 to 0.1
3
unit: mm
1.45
+0.1
–0.05
0.4
+0.1
–0.06
0.16
+0.2
2.8
–0.3
+0.25
1.5
0.65±0.15 0.65±0.15
1
0.950.95
+0.2
–0.05
2.9
1.9±0.2
2
+0.2
–0.1
0.8
1.1
0.1 to 0.3
0.4±0.2
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
–0.05
Marking Symbol (Example): 1O
min
0.5
− 0.1
4
typ
13
14
3.5
60
max
12
−100
−1.5
Unit
mA
nA
mS
pF
pF
mV
V
*
I
rank classification
DSS
Runk
I
(mA)
DSS
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
1
Page 2
Silicon Junction FETs (Small Signal)
2SK198
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
gm V
GS
20
VDS=10V
Ta=25˚C
)
16
mS
(
m
12
C
iss
ID V
Ta=75˚C
25˚C
, C
V
oss
GS
–25˚C
DS
=10V
V
DS
f=1MHz
V
GS
Ta=25˚C
C
iss
)
=–3V
DS
8
7
)
6
mA
(
5
D
4
3
Drain current I
2
1
0
012108264
)
Drain to source voltage VDS (V
gm I
20
I
)
mS
(
16
m
12
2.0mA
DSS
D
=5.0mA
Ta=25˚C
VGS=0V
– 0.1V
– 0.2V
– 0.3V
– 0.4V
VDS=10V
Ta=25˚C
)
9.6
8.0
)
mA
(
6.4
D
4.8
3.2
Drain current I
1.6
0
–1.0 0– 0.2– 0.8 – 0.4– 0.6
Gate to source voltage VGS (V
10
)
pF
(
oss
8
,C
iss
C
)
,
)
6
8
4
Mutual conductance g
0
– 0.8 0– 0.6 – 0.2– 0.4
I
DSS
=5.0mA
Gate to source voltage VGS (V
C
V
rss
DS
)
5
pF
(
rss
C
)
4
3
Common source
(
2
1
Reverse transfer capacitance
0
1 3 10 30 100
Drain to source voltage VDS (V
2.0mA
VGS=–3V
f=1MHz
Ta=25˚C
Mutual conductance g
)
)
dB
(
Noise figure NF
)
8
4
0
082647153
Drain current ID (mA
NF f
12
10
8
6
R
=500Ω
4
2
0
11010210310
g
1kΩ
Frequency f (Hz
VDS=10V
I
=5.2mA
D
Ta=25˚C
)
4
Common source
(
Common source
(
C
2
Input capacitance
Output capacitance
0
1 3 10 30 100
)
5
Drain to source voltage VDS (V
oss
)
2
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