Page 1
2SJ76, 2SJ77, 2SJ78, 2SJ79
Silicon P-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed power switching
Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
• Suitable for direct mounting
• High forward transfer admittance
• Excellent frequency response
• Enhancement-mode
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Source
(Flange)
3. Drain
Page 2
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ76 V
DSX
2SJ77 –160
2SJ78 –180
2SJ79 –200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
GSS
D
DR
Channel dissipation Pch 1.75 W
1
Pch*
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
–140 V
±15 V
–500 mA
–500 mA
30 W
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ76 V
(BR)DSX
–140 — — V VGS = 2 V, ID = –1 mA
breakdown voltage 2SJ77 –160 — — V
2SJ78 –180 — — V
2SJ79 –200 — — V
Gate to source breakdown
V
(BR)GSS
±15——V I
= ±10 µA, VDS = 0
G
voltage
Gate to source voltage V
Drain to source saturation
V
GS(on)
DS(sat)
–0.2 — –1.5 V ID = –10 mA, VDS = –10 V*
— — –2.0 V ID = –10 mA, VGD = 0 *
1
voltage
Forward transfer admittance |yfs|2035—mSI
= –10 mA, VDS = –20 V*
D
Input capacitance Ciss — 120 — pF VDS = –10 V, ID = –10 mA,
Reverse transfer capacitance Crss — 4.8 — pF f = 1 MHz
Note: 1. Pulse test
1
1
2
Page 3
2SJ76, 2SJ77, 2SJ78, 2SJ79
Power vs. Temperature Derating
60
40
20
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
–50
TC = 25°C
–1.0
–0.9
–40
–0.8
(mA)
D
–30
–20
–0.7
–0.6
–0.5
Drain Current I
–10
–20 –60 –800
Drain to Source Voltage V
–40 –100
–0.4
–0.3
–0.2
VGS = –0.1 V
DS
(V)
Typical Output Characteristics
–500
TC = 25°C
–400
(mA)
D
–300
–200
Drain Current I
–100
Drain to Source Voltage V
Typical Transfer Characteristics
–500
V
DS
–400
(mA)
D
–300
–200
Drain Current I
–100
Gate to Source Voltage V
–4.5
VGS = –0.5 V
–8 –20
–4 –12 –160
= –20 V
= –25°C
C
T
–1 –3 –40
–2 –5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
25
75
DS
GS
(V)
(V)
Page 4
2SJ76, 2SJ77, 2SJ78, 2SJ79
Typical Transfer Characteristics
–100
V
DS
–80
(mA)
D
–60
–40
Drain Current I
–20
Gate to Source Voltage V
= –20 V
= –25°C
C
T
–0.8 –2.0
–0.4 –1.2 –1.60
25
500
100
75
(V)
GS
Forward Transfer Admittance
vs. Frequency
200
100
50
20
10
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance
vs. Drain Current
5
2
–2
–10 –200
–5 –20 –100
Drain Current ID (mA)
TC = 25°C
V
= –20 V
DS
–50
10
1.0
TC = 25°C
= –20 V
V
DS
I
= –10 mA
D
0.1
0.05
Forward Transfer Admittance yfs (mS)
5 k
10 k 1 M 10 M
100 k 50 M
Frequency f (Hz)
Page 5
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
-0.08
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.2
6.4
–0.1
+0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-220AB
Conforms
Conforms
1.8 g
Page 6
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