Datasheet 2SJ78, 2SJ77, 2SJ76 Datasheet (HIT)

2SJ76, 2SJ77, 2SJ78, 2SJ79

Silicon P-Channel MOS FET

Application

High frequency and low frequency power amplifier, high speed power switching

Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

Features

• Suitable for direct mounting

• High forward transfer admittance

• Excellent frequency response

• Enhancement-mode

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Source
(Flange)

3. Drain

2SJ76, 2SJ77, 2SJ78, 2SJ79

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SJ76 V

DSX

2SJ77 –160
2SJ78 –180

2SJ79 –200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I

GSS

D

DR

Channel dissipation Pch 1.75 W

1

Pch*
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

–140 V

±15 V
–500 mA
–500 mA

30 W

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SJ76 V

(BR)DSX

–140 — — V VGS = 2 V, ID = –1 mA

breakdown voltage 2SJ77 –160 — — V

2SJ78 –180 — — V
2SJ79 –200 — — V

Gate to source breakdown

V

(BR)GSS

±15——V I

= ±10 µA, VDS = 0

G

voltage
Gate to source voltage V
Drain to source saturation

V

GS(on)

DS(sat)

–0.2 — –1.5 V ID = –10 mA, VDS = –10 V*
— — –2.0 V ID = –10 mA, VGD = 0 *

1

voltage
Forward transfer admittance |yfs|2035—mSI

= –10 mA, VDS = –20 V*

D

Input capacitance Ciss — 120 — pF VDS = –10 V, ID = –10 mA,
Reverse transfer capacitance Crss — 4.8 — pF f = 1 MHz

Note: 1. Pulse test

1

1

2

2SJ76, 2SJ77, 2SJ78, 2SJ79

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

–50

TC = 25°C

–1.0

–0.9

–40

–0.8

(mA)

D

–30

–20

–0.7
–0.6

–0.5

Drain Current I

–10

–20 –60 –800

Drain to Source Voltage V

–40 –100

–0.4
–0.3

–0.2

VGS = –0.1 V

DS

(V)

Typical Output Characteristics

–500

TC = 25°C

–400

(mA)

D

–300

–200

Drain Current I

–100

Drain to Source Voltage V

Typical Transfer Characteristics

–500

V

DS

–400

(mA)

D

–300

–200

Drain Current I

–100

Gate to Source Voltage V

–4.5

VGS = –0.5 V

–8 –20

–4 –12 –160

= –20 V

= –25°C

C

T

–1 –3 –40

–2 –5

–4.0
–3.5

–3.0
–2.5
–2.0

–1.5
–1.0

25

75

DS

GS

(V)

(V)

2SJ76, 2SJ77, 2SJ78, 2SJ79

Typical Transfer Characteristics

–100

V

DS

–80

(mA)

D

–60

–40

Drain Current I

–20

Gate to Source Voltage V

= –20 V

= –25°C

C

T

–0.8 –2.0

–0.4 –1.2 –1.60

25

500

100

75

(V)

GS

Forward Transfer Admittance

vs. Frequency

200

100

50

20

10

Forward Transfer Admittance yfs (mS)

Forward Transfer Admittance

vs. Drain Current

5

2

–2

–10 –200

–5 –20 –100

Drain Current ID (mA)

TC = 25°C
V

= –20 V

DS

–50

10

1.0

TC = 25°C

= –20 V

V

DS

I

= –10 mA

D

0.1

0.05

Forward Transfer Admittance yfs (mS)

5 k

10 k 1 M 10 M

100 k 50 M

Frequency f (Hz)

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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