Datasheet 2SJ609 Datasheet (SANYO)

Ordering number : ENN6671

2SJ609

P-Channel Silicon MOSFET

2SJ609

DC / DC Converter Applications

Features

• Low ON-resistance.

•

Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2190

1.6

0.8

0.8

0.75

1.0

1

8.0

4.0

1.0

23

1.5

3.0

1.4

7.5

3.0

[2SJ609]

11.0

15.5

3.3

0.7

1 : Source
2 : Drain
3 : Gate

2.4

Specifications

4.8

1.7

SANYO : TO-126ML

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --20 A

Tc=25°C10W

--60 V
±20 V

--5 A

1W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I

(BR)DSSID

DSS
GSS

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max

=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

Unit

Continued on next page.

90100 TS IM TA-2920

No.6671-1/4

2SJ609

Continued from preceding page.

Parameter Symbol Conditions

Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 350 pF

Output Capacitance Coss VDS=--20V, f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 37 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 2.9 nC
Diode Forward Voltage V

yfs



RDS(on)1 ID=--3A, VGS=--10V 225 295 mΩ
RDS(on)2 ID=--1A, VGS=--4V 305 425 mΩ

SD

VDS=--10V, ID=--3A 3.2 4.6 S



See specified Test Circuit 15 ns

r

See specified Test Circuit 28 ns

f

IS=--5A, VGS=0 --0.91 --1.2 V

min typ max

Switching Time Test Circuit

Ratings

Unit

0V

--10V

PW=10µs
D.C.≤1%

P.G

--5.0

--4.5

--4.0

--3.5

-- A
D

--3.0

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5
0

0

G

50Ω

-- V

--5.0V

VDD= --30V

ID= --3A
RL=10Ω

D

S

DS

V

2SJ609

--4.0V

OUT

V

IN

V

IN

I

D

--6.0V

--8.0V

--3.5V

--10.0V

--3.0V

= --2.5V

V

GS

--0.4 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

Drain-to-Source V oltage, V

DS

-- V

IT02593

--10

VDS= --10V

--9

--8

--7

-- A
D

--6

--5

--4

--3

Drain Current, I

--2

--1

0

I

-- V

D

GS

°C

Tc= --25

--1.0 --2.0 --3.0 --4.0 --5.0--0.5 --1.5 --2.5 --3.5 --4.5

Gate-to-Source V oltage, V

GS

-- V

IT02594

No.6671-2/4

25

75°C

°C

600

RDS(on) -- V

GS

Tc=25°C

2SJ609

600

RDS(on) -- Tc

500

(on) -- mΩ

DS

400

ID= --1A --3A

300

200

Static Drain-to-Source

On-State Resistance, R

100

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

10

VDS= --10V

7
5

3

fs -- S

2

y

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, 

0.01

--0.001

5

VDD= --30V

3

VGS= --10V

2

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

1.0

--0.1

--10

VDS= --10V

--9

ID= --5A

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1
0

0123456789101112

Gate-to-Source V oltage, V

yfs -- I

GS

D

°C

Tc= --25

75°C

25°C

23 57

t

f

23 57 23 57

23 57

--0.01

Drain Current, I

SW Time -- I

Drain Current, I

23 57 23 57

--0.1

-- A

D

D

t

(off)

d

(on)

t

d

t

r

--1.0 --10

-- A

D

VGS -- Qg

Total Gate Charge, Qg -- nC

-- V

--1.0

500

(on) -- mΩ

400

DS

= --1A, V

I

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

0

--60 --40 --20 0 20 40 60 80 100 120 160140

IT02595 IT02596

--10

VGS= 0

7
5

3
2

-- A

--1.0

F

7
5

3
2

--0.1
7

Forward Current, I

5
3

2

--0.01

--10

IT02597

IT02601

IT02600

--0.4 --0.6 --0.8 --1.0 --1.2

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0

--10 --20

--100
7
5

3

I

= --20A

DP

2

--10

I

= --5A

7

D

5

-- A

3

D

2

--1.0
7
5

3
2

Operation in this

Drain Current, I

area is limited by RDS(on).

--0.1
7
5

3

Tc=25°C

2

Single pulse

--0.01
23 57

--0.1 --1.0

D

= --3A, V

I

D

Case Temperature, Tc -- °C

I

F

Tc=75°C

25°C

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

Drain-to-Source V oltage, V

= --4V

GS

= --10V

GS

-- V

SD

--25°C

Ciss

Coss

Crss

A S O

DC operation

23 57

SD

DS

100ms

--10

DS

-- V

DS

f=1MHz

-- V

<10µs

100µs

1ms

10ms

23 57

-- V

IT02598

IT02599

IT02602

No.6671-3/4

--60--30 --40 --50

--100

1.2

2SJ609

P

P

-- Ta

D

12

D

-- Tc

1.0

-- W
D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT02603

10

-- W
D

8

6

4

2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT02604

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2000. Specifications and information herein are subject
to change without notice.

No.6671-4/4

PS