Datasheet 2SJ596 Datasheet (SANYO)

Ordering number : ENN6979

Preliminary

2SJ596

P-Channel Silicon MOSFET

2SJ596

DC / DC Converter Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2083B

[2SJ596]

6.5

unit : mm

2092B

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

4

1.5

5.5

0.8

[2SJ596]

1.55.5

1.6

7.0

7.5

2.3

2.3

0.5

0.5

0.5

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

7.0

2.5

0.5

1.2

0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62501 TS IM TA-3119

No.6979-1/4

2SJ596

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --32 A

Tc=25°C20W

Electrical Characteristics at Ta=25°C

--60 V

±20 V

--8 A

1W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 680 pF

Output Capacitance Coss VDS=--20V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 50 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 22 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 5 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--4A, VGS=--10V 110 145 mΩ
RDS(on)2 ID=--2A, VGS=--4V 155 220 mΩ

r

f

SD

=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--4A 5 7 S



See specified Test Circuit 30 ns

See specified Test Circuit 35 ns

IS=--8A, VGS=0 --0.9 --1.2 V

Ratings

min typ max

Marking : J596

Switching Time Test Circuit

VDD= --30V

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --4A
RL=7.5Ω

V

OUT

Unit

P.G

50Ω

2SJ596

S

No.6979-2/4

--9

--8

--7

-- A

--6

D

--5

--4

--3

Drain Current, I

--2

--1

0

0

--0.2 --0.4 --0.6 --0.8

300

I

-- V

D

DS

--5.0V

--6.0V

--4.0V

--8.0V

--10.0V

--1.0

--1.2 --1.4 --1.6 --1.8

Drain-to-Source V oltage, V

RDS(on) -- V

DS

GS

--3.5V

--3.0V

VGS= --2.5V

IT03356

-- V

Tc=25°C

2SJ596

--2.0

--16

VDS= --10V

--14

--12

-- A

--10

D

--8

--6

Drain Current, I

--4

--2

0

0

--0.5 --1.0 --1.5 --2.0

300

I

-- V

D

GS

Tc=75°C

25°C

--2.5

--3.0 --3.5 --4.0 --4.5 --5.0

Gate-to-Source V oltage, V

RDS(on) -- Tc

--25°C

GS

-- V

Tc= --25°C

75°C

25°C

IT03357

250

200

(on) -- mΩ

DS

ID= --2A

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--2 --4 --6 --8

0

3

VDS= --10V

2

10

7

fs -- S

5

y

3
2

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, 

0.01
23 57 7

--0.001

3

VDD= --30V

2

VGS= --10V

100

7
5

3
2

10

7

Switching Time, SW Time -- ns

5

3

23 57 7

--0.1

--4A

--12 --14 --16 --18

--10

Gate-to-Source V oltage, V



y

fs -- I

75°C

Tc= --25°C

25°C

23 5

--0.01

--0.1

Drain Current, I

D

SW Time -- I

t

(off)

d

t

f

t

r

Drain Current, I

--1.0

td(on)

23 5

D

250

(on) -- mΩ

200

DS

= --2A, V

I

150

100

50

Static Drain-to-Source

On-State Resistance, R

--20

IT03358

-- V

GS

D

723 5

--1.0

-- A

723 5

--10

23

IT03360

D

0

--60 --40 --20 0

3

VGS=0

2

--10
7
5

3

-- A

2

F

--1.0
7
5

3
2

--0.1
7

Forward Current, I

5
3

2

--0.01
0

3
2

1000

7
5

3
2

--0.2 --0.4 --0.6 --0.8 --1.0 --1.2

D

I

D

20

Case Temperature, Tc -- °C

I

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

= --4V

GS

= --10V

GS

= --4A, V

40 60 80 100 120

-- V

F

SD

Tc=75°C

25°C

--25°C

SD

Ciss

-- V

DS

140 160

IT03359

IT03361

f=1MHz

Coss

100

7
5

-- A

--10

23

IT03362

Ciss, Coss, Crss -- pF

3
2

10

0

--10 --20 --30 --40 --50 --60

Drain-to-Source V oltage, V

Crss

DS

-- V

IT03363

No.6979-3/4

2SJ596

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1
0

0

1.2

1.0

-- W
D

0.8

0.6

0.4

VGS -- Qg

VDS= --10V
ID= --8A

246810121416182022

Total Gate Charge, Qg -- nC

P

-- Ta P

D

IT03364

--100
7
5

IDP= --32A

3
2

ID= --8A

--10

-- A

7

D

5
3

2

--1.0

Drain Current, I

--0.1

25

-- W

20

D

15

10

Operation in this

7
5

area is limited by RDS(on).

3
2

Tc=25°C
Single pulse

23 57

--0.1 --1.0

A S O

DC Operation

23 57

Drain-to-Source V oltage, V

-- Tc

D

10ms

100ms

--10

DS

-- V

≤10µs

100µs

1ms

23 57

IT03365

--100

0.2

Allowable Power Dissipation, P

0

20 40 60 80 100 120 140 160

0

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

Ambient Temperature, Ta -- °C

IT03366

5

Allowable Power Dissipation, P

0

20 40 60 80 100 120 140 160

0

Case Temperature, Tc -- °C

IT03367

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6979-4/4

PS