Page 1
Ordering number : ENN6977
Preliminary
2SJ594
P-Channel Silicon MOSFET
2SJ594
DC / DC Converter Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2083B
[2SJ594]
6.5
unit : mm
2092B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
6.5
5.0
4
1.5
5.5
0.8
[2SJ594]
1.55.5
1.6
7.0
7.5
2.3
2.3
0.5
0.5
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-3117
No.6977-1/4
Page 2
2SJ594
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --20 A
Tc=25°C15W
Electrical Characteristics at Ta=25°C
--60 V
±20 V
--5 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 350 pF
Output Capacitance Coss VDS=--20V, f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 37 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 2.9 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--3A, VGS=--10V 225 295 mΩ
RDS(on)2 ID=--1A, VGS=--4V 305 425 mΩ
r
f
SD
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 3.2 4.5 S
See specified Test Circuit 15 ns
See specified Test Circuit 28 ns
IS=--5A, VGS=0 --0.9 --1.2 V
Ratings
min typ max
Marking : J594
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --3A
RL=10Ω
V
OUT
Unit
P.G
50Ω
2SJ594
S
No.6977-2/4
Page 3
--6
--5
-- A
--4
D
--3
--2
Drain Current, I
--1
0
0
600
I
-- V
D
--8.0V
DS
--10.0V
--6.0V
--0.4
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, V
RDS(on) -- V
GS
--5.0V
DS
V
-- V
--4.0V
--3.5V
--3.0V
= --2.5V
GS
Tc=25°C
IT03332
2SJ594
--10
VDS= --10V
--9
--8
--7
-- A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
600
I
-- V
D
--2.0 --2.5 --4.0 --4.5 --5.00 --0.5 --1.0 --1.5 --3.0 --3.5
25°C
GS
Tc=75°C
--25°C
Gate-to-Source V oltage, V
RDS(on) -- Tc
GS
Tc= --25°C
-- V
25°C
75°C
IT03333
500
400
(on) -- mΩ
ID= --1A
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
10
VDS= --10V
7
5
3
fs -- S
2
y
1.0
7
5
3
2
0.1
7
5
3
2
Forward Transfer Admittance,
0.01
--0.001
2
100
7
5
3
2
10
7
5
3
Switching Time, SW Time -- ns
2
--3A
Gate-to-Source V oltage, V
75°C
Tc= --25°C
25°C
23 57
--0.01
23 57
Drain Current, I
SW Time -- I
y
fs -- I
GS
D
23 57 23 57
--0.1
-- A
D
D
t
(off)
d
t
f
(on)
t
d
t
r
-- V
--1.0
VDD= --30V
VGS= --10V
500
(on) -- mΩ
400
DS
= --1A, V
I
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
IT03334 IT03335
--10
VGS=0
7
5
3
2
-- A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
--10
IT03336
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
1000
7
5
D
= --3A, V
I
D
Case Temperature, Tc -- °C
I
Tc=75°C
Diode Forward V oltage, V
Ciss, Coss, Crss -- V
F
-- V
25°C
GS
= --4V
= --10V
GS
SD
°C
--25
SD
-- V
DS
IT03337
f=1MHz
Ciss
3
2
Ciss, Coss, Crss -- pF
100
7
5
3
2
Coss
Crss
1.0
--0.1
23 57 23 57
Drain Current, I
--1.0
D
-- A
IT03338
--10
10
0
--10 --20
Drain-to-Source V oltage, V
DS
-- V
--60--30 --40 --50
IT03339
No.6977-3/4
Page 4
2SJ594
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
0
VDS= --10V
ID= --5A
VGS -- Qg
34 121110987612
5
Total Gate Charge, Qg -- nC
P
-- Ta
1.2
1.0
-- W
D
D
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03340
IT03342
3
I
= --20A
DP
2
--10
7
I
= --5A
D
5
-- A
D
3
2
--1.0
7
5
Drain Current, I
--0.1
Operation in this
area is limited by RDS(on).
3
2
Tc=25°C
Single pulse
23 57 23 57 23 57
--0.1 --1.0 --10
A S O
Drain-to-Source V oltage, V
P
20
18
-- W
16
D
15
14
12
10
8
6
4
2
Allowable Power Dissipation, P
0020 40 60
D
80 100 120
Case Temperature, Tc -- °C
100ms
DC operation
-- Tc
DS
10ms
-- V
≤10µs
100µs
1ms
--100
IT03341
140 160
IT03343
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6977-4/4
PS
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