Datasheet 2SJ587 Datasheet (HIT)

Silicon P Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)

• 2.5 V gate drive device.

• Small package (SMPAK)

Outline

2SJ587

ADE-208-801 (Z)

1st.Edition.

June 1999

SMPAK

2

G

3

1

2

D

3

1. Source

2. Gate

3. Drain

1

S

2SJ587

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 32.5 50 — mS I
Input capacitance Ciss — 13 — pF VDS = -10 V
Output capacitance Coss — 10 — pF VGS = 0
Reverse transfer capacitance Crss — 1.8 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is DP

-20 — — V ID = -100 µA, VGS = 0

±10 — — V IG = ±100 µA, VDS = 0

——±5 µAV
——-1µAV

-0.8 — -1.8 V ID = -10µA, VDS = -5 V
— 4.1 5.0 Ω I
— 6.0 8.5 Ω I

—22—nsI
—48—nsR
—50—ns
—60—ns

-20 V
±10 V

-50 mA

-200 mA

-50 mA
100 mW

= ±8 V, VDS = 0

GS

= -20 V, VGS = 0

DS

= -25 mA,VGS = -4 V

D

= -10 mA,VGS = -2.5 V

D

= -25 mA, VDS = -10 V

D

= -25 mA, VGS = -4 V

D

= 400 Ω

L

Note 3

Note 3

Note 3

2

Main Characteristics

2SJ587

Power vs.Temperature Derating

200

150

100

50

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic board.(12.5x20x0.7mm)

Typical Output Characteritics

-0.2

-6 V

-5 V

-4 V

Pulse Test

-0.16

D

-0.12

-3 V

-0.08

Maximum Safe Operation Area

-5

-2

-1.0

-0.5

-0.2

D

-0.1

-0.05

-0.02

-0.01

-0.005

Drain Current I (A)

-0.002

-0.001

-0.0005

-0.05

Operation in this area
is limited by RDS(on)

Ta=25 °C

-0.1 -1.0

-0.2 -0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic board.(12.5x20x0.7mm)

DC Operation

-2 -5

-10
DS

PW = 10 ms

(1 shot)

-20

Typical Transfer Characteristics

-0.2

-0.16

D

-0.12

-0.08

10 µs

100 µs

1 ms

-50

Drain Current I (A)

-0.04

0

-2 -4- -6 -8 -10

Drain to Source Voltage V (V)

V = -2V

GS

DS

Drain Current I (A)

-0.04
75 °C

0

-1 -2 -3 -4 -5

Gate to Source Voltage V (V)

Tc = –25 °C

V = -10 V

25 °C

Pulse Test

DS

GS

3

2SJ587

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0
Pulse Test

1.6

1.2

DS(on)

V (V)

0.8

I = -50mA

0.4

Drain to Source Saturation Voltage

D

-25mA

-10m A

0

-2 -4

0

Gate to Source Voltage V (V)

-6

-8 -10 -0.01 -0.05-0.02

GS

Static Drain to Source on State

25

Resistance vs. Temperature

I = -25m A

D

20

()

15

DS(on)

10

R

-2.5V

V = -4V

-10m A, -25m A

GS

-10m A

5

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Pulse Test

Case Temperature Tc ( °C)

Static Drain to Sourceon State

Resistance vs. Drain Current

50

Pulse Test

-2.5 V

20

V = -4 V

GS

()

10

5

DS(on)

R

2

1.0

0.05

Static Drain to Source on State Resistance

Drain Current I (A)

D

Forward TransferAdmittance

vs. Drain Current

0.5
VDS=-10V

0.2

Pulse Test

Tc = -25 °C

|yfs| (S)

0.1

0.05

25 °C

75 °C

0.02

0.01

Forward Transfer Admittance

0.005

-0.01

-0.02 -0.05
Drain Current I (A)

D

-0.1

-0.1

4

2SJ587

Typical capacitance vs.

100

Drain to Source Voltage

VGS=0
f=1MHz

50

20

10

5

Capacitance C (pF)

2

1

0 -4 -8 -12 -16 -20

Drain to Source Voltage V (V)

Reverse Drain Current vs.

Source to Drain Voltage

-0.2
V = 0,5V

-0.16

DR

-10 V

-0.12

Coss

DS

GS

-5 V

Ciss

Crss

1000

Switching Characteristics

500

200
100

50
20

10

5

Switching Time t (ns)

V = -4 V, V = -10 V

2
1

-0.01 -0.1

-0.02

GS

PW = 5 µs, duty < 1 %

Drain Current I (A)

DD

-0.05

D

t

d(on)

t

r

t

f

t

d(off)

-0.08

-0.04

Reverse Drain Current I (A)

0

-0.4 -0.8 -1.2 -1.6 -2.0

Source to Drain Voltage V (V)

Pulse Test

SD

5

2SJ587

Switching Time Test Circuit Waveforms

Vin Monitor

Vin

-4 V

D.U.T.

50

Vout
Monitor

R

L

V

DD

= –10 V

Vin

10%

90%

90%

90%

Vout

td(on)

10%

10%

tr

td(off)

t

f

6

Package Dimensions

2SJ587

Unit: mm

0.2

+ 0.1
– 0.05

0.5

1.0
.1.6

0.3

+ 0.1
– 0.1

+ 0.2
– 0.2

0.5

+ 0.1
– 0.05

0.2

+ 0.1
– 0.0.5

0.15

+ 0.1

– 0.1

0.7

+ 0.1

0.4

– 0.1

0.8

0.4

+ 0.2

1.6

– 0.2

0.15

0 ~ 0.1

+ 0.1
– 0.05

Hitachi Code

EIAJ

JEDEC

SMPAK

–
–

7

2SJ587

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

8

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX