Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6410
2SJ584LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25°C
Package Dimensions
unit:mm
2078B
[2SJ584LS]
10.0
3.2
16.1
3.6
123
0.9
1.2
0.75
3.5
7.2
2.4
2.552.55
4.5
2.8
16.0
0.6
14.0
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
052–V
03±V
5.4–A
81–A
0.2W
52W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
SSD
SSG
SG
SD
I
SSD)RB(
D
I
SSG)RB(
G
V
SD
V
SG
)ffo(VSDI,V01–=
)no(IDV,A5.2–=
V,Am1–=
0=052–V
SG
V,Aµ001±=
0=03±V
SD
V,V052–=
0=001–Aµ
SG
V,V52±=
0=01±Aµ
SD
Am1–=5.3–0.5–V
D
A5.2–=5.15.2S
D
V01–=59.02.1
SG
80300TS (KOTO) TA-2755 No.6410–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
Ω
Page 2
2SJ584LS
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V001–=
egrahCecruoS-ot-etaGsgQVSDV,V001–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V001–=
egatloVdrawroFedoiDV
r
d
f
DS
SD
SD
SD
)no(d
)ffo(tiucriCtseTdeificepseeS25sn
I
S
Marking : J584
Switching Time Test Circuit
VDD= --100V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --2.5A
RL=40Ω
V
OUT
zHM1=f,V02–=054Fp
zHM1=f,V02–=021Fp
zHM1=f,V02–=05Fp
tiucriCtseTdeificepseeS5.21sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS12sn
SG
SG
SG
V,A5.4–=
0=9.0–5.1–V
SG
nimpytxam
I,V01–=
A5.4–=22Cn
D
I,V01–=
A5.4–=7.3Cn
D
I,V01–=
A5.4–=11Cn
D
sgnitaR
tinU
--5.0
--4.5
--4.0
--3.5
–A
--3.0
D
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
2.0
1.8
– Ω
1.6
(on)
DS
1.4
P.G
0
0
--2
Drain-to-Source Voltage, VDS–V
50Ω
I
D
-- V
2SJ584LS
S
DS
--9V
--8V
= --10V
GS
V
--4 --6 --8 --10--1 --3 --5 --7 --9
RDS(on) -- V
GS
--7V
--6V
--5V
IT01497
Tc=25°C
ID= --2.5A
I
-- V
--9
VDS= --10V
--8
--7
--6
–A
D
--5
--4
--3
Drain Current, I
--2
--1
0
0 --2 --4 --6 --8 --10--1 --3 --5 --7 --9
D
GS
Gate-to-Source Voltage, VGS–V
RDS(on) -- Tc
– Ω
(on)
DS
2.5
2.0
1.5
°C
25°C
Tc= --25
VGS= --10V
ID= --2.5A
75°C
IT01498
1.2
1.0
0.8
Static Drain-to-Source
On-State Resistance, R
0.6
--6 --8 --10 --12
Gate-to-Source Voltage, VGS–V
--14 --16 --18 --20
IT01499
1.0
0.5
Static Drain-to-Source
On-State Resistance, R
0
--50
--25 0 25 50 75 100 125 150
Case Temperature, Tc – ˚C
IT01500
No.6410–2/4
Page 3
fs|–S
y
Forward Transfer Admittance, |
1000
Switching Time, SW Time – ns
V
GS –
Gate-to-Source Voltage, V
10
1.0
0.1
100
10
1.0
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
2.5
7
5
3
2
7
5
3
2
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
--0.1
VDS= --100V
--4.5A
ID=
0
0
yfs -- I
D
VDS= --10V
75
°C
Tc= --25°C
25°C
--1.0
Drain Current, ID–A
SW Time -- I
23 5723 57
IT01501
D
VDD= --100V
VGS= --10V
t
td(off)
t
f
r
td(on)
23 57 23 57
Drain Current, ID–A
--1.0
IT01503
VGS -- Qg
Total Gate Charge, Qg – nC
12106 8 18 20 22161424
IT01505
P
-- Ta
D
2SJ584LS
--10
--10
I
-- V
F
°C
Tc=75
SD
°C
25°C
--25
--10
7
5
3
2
–A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.3 --0.6 --0.9 --1.2
Diode Forward Voltage, VSD–V
10000
7
5
3
2
1000
7
5
3
2
100
7
Ciss, Coss, Crss – pF
5
3
2
0--510--10
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--15 --20 --25 --30
DS
Drain-to-Source Voltage, VDS–V
--100
7
5
3
I
= --18A
DP
2
--10
7
I
= --4.5A
D
5
–A
3
D
2
,I
--1.0
7
5
Operation in this
3
2
area is limited by RDS(on).
Drain Current
--0.1
7
5
3
Tc=25°C
2
Single pulse
--0.01
23 57 23 57 23 57
--1.0
40
Drain-to-Source Voltage, VDS–V
A S O
10µs
100µs
1ms
10ms
100ms
DC operation
--10 --100 --1000
P
-- Tc
D
V
GS
IT01502
f=1MHz
IT01504
IT01506
= 0
–W
2.0
D
1.5
1.0
0.5
Allowable Power Dissipation, P
0020 40 60
Ambient Temperature, Ta – ˚C
80 100 120
140 160
IT01508
35
–W
D
30
25
20
15
10
5
Allowable Power Dissipation, P
0020 40 60
Case Temperature, Tc – ˚C
80 100 120
140 160
IT01507
No.6410–3/4
Page 4
2SJ584LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.6410–4/4
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