Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6384
2SJ579
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ579]
1.6
0.4
0.5
2
3
1.5
0.75
2
× )mm8.05.1W
mm052(draobcimarecanodetnuoM
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
06–V
02±V
2.1–A
8.4–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=06–V
SG
V,V06–=
SD
SG
SD
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–4.2–V
D
A6.0–=9.02.1S
D
V,A6.0–=
V01–=026008mΩ
SG
V,Am4.0–=
V4–=0080511mΩ
SG
nimpytxam
Marking : JQ Continued on next page.
31000TS (KOTO) TA-2315 No.6384–1/4
sgnitaR
tinU
Page 2
2SJ579
5
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=--30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID=--0.6A
RL=50Ω
V
OUT
zHM1=f,V02–=031Fp
zHM1=f,V02–=53Fp
zHM1=f,V02–=9Fp
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS22sn
tiucriCtseTdeificepseeS8sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,A2.1–=
0=28.0–2.1–V
SG
nimpytxam
A2.1–=5Cn
D
A2.1–=8.0Cn
D
A2.1–=9.0Cn
D
sgnitaR
tinU
--1.4
--1.2
--1.0
–A
D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
1400
1200
–mΩ
1000
DS(on)
800
600
P.G
0
0
ID=--0.4A
50Ω
I
D
-- V
2SJ579
S
DS
--5.0V
--8.0V
--4.0V
--3.5V
--6.0V
--10.0V
--0.4
Drain-to-Source Voltage, VDS–V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--0.6A
--3.0V
VGS=--2.5V
IT01167
Tc=25°C
--2.5
VDS=--10V
--2.0
D
GS
I
-- V
–A
D
--1.5
--1.0
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5 --4.
1400
1200
–mΩ
1000
DS(on)
800
600
Gate-to-Source Voltage, VGS–V
RDS(on) -- Tc
=- -4V
GS
=- -0.4A, V
I
D
=- -0.6A, V
I
D
GS
=- -10V
Tc=--25
°C
75
°C
25°C
IT01168
400
200
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12
Gate-to-Source Voltage, V
--14 --16 --18 --20
–V
GS
IT01169
400
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT01170
No.6384–2/4
Page 3
fs|–S
y
Forward Transfer Admittance, |
0.01
100
Switching Time, SW Time – ns
1.0
--10
V
GS –
Gate-to-Source Voltage, V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
--0.001
7
5
3
2
10
7
5
3
2
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
1.6
0
td(on)
t
r
--0.1
VDS=--10V
ID=--1.2A
2SJ579
|yfs |
Tc=--25
Drain Current, ID–A
SW Time -- I
t
23 57723
Drain Current, ID–A
Total Gate Charge, Qg – nC
-
°C
C
°
75
--0.1--0.01 --1.0
(off)
d
t
f
VGS -- Qg
P
-- Ta
D
I
D
VDS=--10V
C
°
25
23 5723 5723 5723 57
--10
IT01171
D
VDD=--30V
VGS=--10V
--1.0
IT01173
5.03.01.0 2.0 2.5 3.5 4.0 4.50.5 1.5
IT01175
--10
7
5
3
2
–A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.4--0.3--0.2--0.1 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Diode Forward Voltage, VSD–V
1000
7
5
3
2
100
7
5
3
2
10
Ciss, Coss, Crss – pF
7
5
3
2
1.0
0
--10
7
I
DP
5
3
2
--1.0
–A
7
D
,I
5
3
2
--0.1
7
Drain Current
5
3
2
Tc=25
Single pulse
--0.01
--0.1
4.0
Ciss, Coss, Crss -- V
--10 --20
Drain-to-Source Voltage, VDS–V
=--4.8A
I
=--1.2A
D
Operation in
this area is
limited by RDS(on).
°
C
23 57 23 57 23 57
Drain-to-Source Voltage, VDS–V
I
--1.0 --10 --100
F
A S O
P
D
-- V
Ciss
Coss
Crss
-- Tc
SD
C
C
°
°
25
Tc=75
DC operation
--25
100ms
C
°
DS
1ms
10ms
V
GS
IT01172
f=1MHz
IT01174
≤10µs
100µs
IT01176
= 0
--60--30 --40 --50
1.4
–W
D
1.2
1.0
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board (250mm
2
×0.8mm)
60
Ambient Temperature, Ta – ˚C
80 100 120
140 160
IT01178
3.5
–W
D
3.0
2.5
2.0
1.5
1.0
0.5
Allowable Power Dissipation, P
0020 40
60
Case Temperature, Tc – ˚C
80 100 120
140 160
IT01177
No.6384–3/4
Page 4
2SJ579
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6384–4/4
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