Datasheet 2SJ569LS Datasheet (SANYO)

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6898

2SJ569LS

P-Channel Silicon MOSFET

2SJ569LS

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

•

Ultrahigh-speed switching.

Package Dimensions

unit : mm

2078B

[2SJ569]

7.2

16.0

14.0

4.5

0.7

1 : Gate
2 : Drain

2.8

0.6

3.2

16.1

3.6

10.0

123

0.9

1.2

0.75

3.5

3 : Source

2.4

Specifications

2.552.55

SANYO : TO-220FI-LS

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --20 A

Tc=25°C30W

--300 V
±30 V

--5 A

2.0 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Gate-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.5 --2.5 V

(BR)DSSID
(BR)GSSIG

DSS
GSS

=--1mA, VGS=0 --300 V

=±100µA, VDS=0 ±30 V
VDS=--300V, VGS=0 --100 µA
VGS=±25V, VDS=0 ±10 µA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

22201 TS IM TA-2231

No.6898-1/4

Unit

2SJ569LS

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A 3 5 S
Static Drain-to-Sourse On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 750 pF
Output Capacitance Coss VDS=--20V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 76 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 230 ns
Fall Time t
Diode Forward Voltage V

RDS(on) ID=--3A, VGS=--10V 0.95 1.25 Ω

See specified Test Circui 37 ns

r

See specified Test Circuit 110 ns

f

SD

IS=--5A, VGS=0 --1.0 --1.5 V

min typ max

Switching Time Test Circuit

VDD= --100V

ID= --3A
RL=33.3Ω

0V

--10V

V

IN

Ratings

Unit

PW=10µs
D.C.≤1%

P.G

--5.0

--4.5

--8.0V

--4.0

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

--0.5

--10.0V

0

0

-- A
D

Drain Current, I

--6.0V

--6

V

IN

G

50Ω

I

D

--4.0V

--12 --18 --24 --30--3 --9 --15 --21 --27

-- V

D

S

DS

Drain-to-Source V oltage, VDS -- V

--2.0

--1.8

--1.6

--1.4

(on) -- Ω

DS

--1.2

--1.0

--0.8

--0.6

--0.4

Static Drain-to-Source

On-State Resistance, R

--0.2
0

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

RDS(on) -- V

GS

Gate-to-Source V oltage, VGS -- V

V

OUT

2SJ569LS

--3.5V

--3.0V

= --2.5V

V

GS

Tc=25°C
ID= --3A

I

-- V

--8

VDS= --10V

--7

--6

-- A

--5

D

--4

--3

Drain Current, I

--2

--1

0

0 --2 --4 --6--1 --3 --5

IT01834

2.0

ID= --3A

1.8

VGS= --10V

1.6

1.4

(on) -- Ω

DS

1.2

1.0

0.8

0.6

0.4

Static Drain-to-Source

On-State Resistance, R

0.2
0

--60 --40 --20 0 20 40 60 80 100 120 160140

IT01836 IT01837

Gate-to-Source V oltage, VGS -- V

D

Tc=75°C

RDS(on) -- Tc

Case Temperature, Tc -- °C

--25

GS

25°C

Tc= --25°C

25°C

°C

75°C

IT01835

No.6898-2/4

10

VDS= --10V

7
5

yfs -- I

2SJ569LS

I

-- V

F

D

--10

V

= 0

GS

7
5

SD

1.0

Forward Transfer Admittance, yfs -- S

0.1

10000

1000

100

Ciss, Coss, Crss -- pF

1000

100

Switching Time, SW Time -- ns

10

3.0

3
2

7
5

3
2

--0.1

7
5

3
2

7
5

3
2

7
5

3
2

0--510--10

7
5

3
2

7
5

3
2

--0.1

Tc= --25°C

25°C

75°C

Drain Current, ID -- A

--1.0

Ciss, Coss, Crss -- V

23 5723 57

--10

IT01838

DS

f=1MHz

Ciss

Coss

Crss

--15 --20 --25 --30 --35 --40 --45 --50

Drain-to-Source V oltage, VDS -- V

SW Time -- I

D

IT01840

VDD=100V
VGS=10V

t

(off)

d

t

f

t

td(on)

23 57 23 5

--1.0

Drain Current, ID -- A

P

-- Ta

D

r

IT01842

3
2

-- A
F

--1.0
7

5

Forward Current, I

3
2

25°C

--25°C

--0.1

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Tc=75°C

Diode Forward V oltage, VSD -- V

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1
0

0

VDS= --10V

VGS -- Qg

15 20 403530510

25

Total Gate Charge, Qg -- nC

--100
7

5
3

= --20A

I

DP

2

--10

I

= --5A

7

D

5

-- A

3

D

2

--1.0
7
5

Operation in this

3

area is limited by RDS(on).

2

Drain Current, I

--0.1
7
5

3

Ta=25°C

2

Single pulse

--0.01
23 57

--1.0 --10

A S O

DC operation

23 57

--100

23 57

Drain-to-Source V oltage, VDS -- V

P

-- Tc

35

D

IT01839

IT01841

10µs

100µs

1ms

10ms

100ms

--1000

IT01843

2.5

-- W
D

2.0

1.5

1.0

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT01845

30

-- W
D

25

20

15

10

5

Allowable Power Dissipation, P

0020 40 60

80 100 120

Case Temperature, Tc -- °C

140 160

IT01844

No.6898-3/4

2SJ569LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.

No.6898-4/4

PS