Datasheet 2SJ562 Datasheet (SANYO)

Page 1

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6096A

2SJ562

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

SSD SSG

PW≤10µs, duty cycle≤1%

Tc=25˚C

Package Dimensions

unit:mm

2062A

[2SJ562]

1.6

0.4

0.5

1.5

0.75

× )mm8.05.1W

mm052(draobcimarecanodetnuoM

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)

02–V 01±V 2–A 8–A

5.3W

˚C ˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

SSD SSG

)ffo(SG

1IDV,A1–=

)no(SD

SSD)RB(

V V V

V,Am1–=

0=02–V

V,V02–=

SD SG SD

0=01–Aµ

V,V8±=

0=01±Aµ

I,V01–=

Am1–=4.0–4.1–V

A1–=8.16.2S

V4–=542513mΩ

V,Am002–=

V5.2–=043084mΩ

nimpytxam

Marking : JN Continued on next page.

71000TS (KOTO) TA-1695 No.6096–1/4

sgnitaR

tinU

Page 2

2SJ562

VDD=—10V

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

SD SD SD

)no(d

)ffo(d

V,A2–=

Switching Time Test Circuit

—4V

PW=10µs D.C.≤1%

ID=—1A RL=10Ω

OUT

zHM1=f,V01–=081Fp zHM1=f,V01–=09Fp zHM1=f,V01–=34Fp

tiucriCtseTdeificepseeS01sn tiucriCtseTdeificepseeS82sn tiucriCtseTdeificepseeS23sn tiucriCtseTdeificepseeS23sn I,V01–=

I,V01–=

0=0.1–5.1–V

sgnitaR

nimpytxam

A2–=5.9Cn

A2–=1Cn

A2–=5.1Cn

tinU

P.G

2.0

1.8

1.6

1.4

–A

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2 0

7 5

fs|–S

3 2

1.0 7

3 2

Forward Transfer Admittance, |

0.1

0.01

2SJ562

50Ω

ID-

-10.0V

-4.0V

-3.0V

-2.5V

-2.0V

-8.0V

-6.0V

0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0

Drain-to-Source Voltage, VDS–V

VGS=-1.5V

VDS=-10V

°C

Tc=-25

°C

75°C

23 57 23 57 23 57

0.1

Drain Current, ID–A

1.0

4.0

VDS=-10V

3.6

3.2

2.8

–A

2.4

2.0

1.6

1.2

Drain Current, I

0.8

0.4 0

0.4-0.8-1.2

1000

900

800

–mΩ

700

600

DS(on)

500

400

ID=-0.2A

300

200

Static Drain-to-Source

On-State Resistance, R

100

Gate-to-Source Voltage, VGS–V

ID=-1.0A

-2-3-4-5-6-7-8-9-

Gate-to-Source Voltage, VGS–V

ID-

DS(on)

°C

Tc=-25

°C

2.0

1.6

2.4-2.8

Tc=25

°C

3.2

No.6096–2/4

Page 3

2SJ562

600

500

–mΩ

400

DS(on)

300

200

100

Static Drain-to-Source

On-State Resistance, R

1000

Ciss, Coss, Crss – pF

7 5

3 2

100

7 5

3 2

-20-40-

60 40 60 80 100 120 160140

DS(on)

=-0.2A,V

=-1.0A,V

020

Case Temperature, Tc – ˚C

Ciss,Coss,Crss

-6-8-10-

=-2.5V

=-4V

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

1000

7 5

3 2

100

7 5

3 2

7 5

Switching Time, SW Time – ns

3 2

1.0 7235723 57

0.1

1.6

1.5

1.4

–W

1.2

SW Time

Drain Current, ID–A

Mounted on a ceramic board (250mm

(off)

td(on)

1.0

Ta PD-

-14-16-

VDD=-10V VGS=

f=1MHz

Ciss

Coss

Crss

18 123456789100

-10 7

VGS=0

5 3

-1.0 7

–A

3 2

-0.1 7

5 3

-0.01

Forward Current, I

7 5

3 2

-0.001 0

VDS=-10V ID=

–

Gate-to-Source Voltage, V

1 0

IDP=-8A

-10 7 5

3 2

–A

-1.0

7 5

3 2

-0.1

Drain Current

7 5

3 2

Tc=25°C Single pulse

-0.01

0.1

4.0

3.5

–W

3.0

IF-

25°C

75°C

0.2

0.4

0.6

Diode Forward Voltage, VSD–V

A S O

ID=-2A

Operation in this area is limited by RDS(on).

Drain-to-Source Voltage, VDS–V

1.0

DC operation

23 5723 57 23

Tc=-25

0.8

°C

100ms

1.0

100µs

1ms

10ms

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

20 6040 80 120100 140 1600

×0.8mm)

2.0

1.0

Allowable Power Dissipation, P

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

No.6096–3/4

Page 4

2SJ562

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice.

PS No.6096–4/4