Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6120A
2SJ560
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2157
[2SJ560]
1.6
0.4
0.5
3
1.5
0.75
2
× )mm8.03.1W
mm052(draobcimarecanodetnuoM
1
2
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
02–V
01±V
5.1–A
6–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
Am1–=4.0–4.1–V
D
D
V,Am057–=
V,Am001–=
Am057–=1.16.1S
V4–=024006mΩ
SG
V5.2–=0360001mΩ
SG
nimpytxam
Marking : JL Continued on next page.
71000TS (KOTO) TA-1693 No.6120–1/4
sgnitaR
tinU
Page 2
2SJ560
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=–10V
D
ID=–750mA
RL=13.3Ω
V
OUT
0V
–4V
PW=10µs
D.C.≤1%
V
IN
V
IN
G
zHM1=f,V01–=001Fp
zHM1=f,V01–=06Fp
zHM1=f,V01–=52Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS33sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,A5.1–=
0=0.1–5.1–V
SG
nimpytxam
A5.1–=5Cn
D
A5.1–=1Cn
D
A5.1–=1Cn
D
sgnitaR
tinU
P.G
-
1.6
-
1.4
-
1.2
–A
-
1.0
D
-
0.8
-
0.6
Drain Current, I
-
0.4
-
0.2
fs|–S
y
1.0
Forward Transfer Admittance, |
0.1
50Ω
ID-
S
V
2SJ560
DS
-4.0V
-3.0V
-10.0V
-8.0V
-2.5V
-6.0V
-2.0V
VGS=-1.5V
0
-
0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0 0
0
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
10
7
5
3
2
D
Tc=-25
VDS=
°C
25
°C
-
10V
75°C
7
5
3
2
2 3 57 2 3 57 2 3 5
-
0.01
-
0.1
Drain Current, ID–A
-
1.0
-
3.2
VDS=-10V
-
2.8
-
2.4
–A
-
2.0
D
-
1.6
-
1.2
Drain Current, I
-
0.8
-
0.4
0
-
0.4-0.8-1.2
Gate-to-Source Voltage, VGS–V
1000
900
800
-
700
600
500
400
300
200
100
0.1A
0
-
10
-
2
–mΩ
DS(on)
Static Drain-to-Source
On-State Resistance, R
Gate-to-Source Voltage, VGS–V
ID-
R
DS(on)
ID=-0.75A
-3-
V
GS
Tc=-25
-
2.0-2.4-2.8-3.2
-
1.6
-
V
GS
4
-5-6-7-8-9-
°C
25
°C
75
Tc=25
°C
-
3.6
°C
10
No.6120–2/4
Page 3
2SJ560
R
1000
900
800
–mΩ
700
600
DS(on)
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
1000
100
Ciss, Coss, Crss – pF
0
7
5
3
2
7
5
3
2
10
-20-40-
60 40 60 80 100 120 160140
-
4
-
20
Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC
DS(on)
=-0.1A,V
I
D
=-0.75A,V
I
D
020
Case Temperature, Tc – ˚C
Ciss,Coss,Crss-V
-6-8-
10
GS
-
=-2.5V
GS
-
12
Tc
=-4V
-
14
DS
f=1MHz
-16-18-
Ciss
Coss
Crss
IF-
V
°C
25
°C
Tc=-25
-
-
SD
0.8
Qg
-
1.0
-
1.2
1.4
-
7
VGS=0
5
3
2
–A
-1.0
F
7
5
3
2
-0.1
7
Forward Current, I
5
3
2
-0.01
0
-
0.2-0.4-0.6
Diode Forward Voltage, VSD–V
-
10
VDS=-10V
-
1.5A
ID=
-
9
V
–
-
8
GS
-
7
-
6
-
5
-
4
-
3
-
2
Gate-to-Source Voltage, V
-
1
20
0
1.0 2.0 3.0 4.0 5.00
V
75°C
GS
1000
100
10
Switching Time, SW Time – ns
1.0
1.4
1.3
1.2
–W
D
1.0
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
SW Time
7
5
3
2
7
5
3
2
7
5
3
2
t
(off)
d
-
23 57 23 5357
0.1
Drain Current, ID–A
P
Mounted on a ceramic board (250mm
-
I
D
VDD=-10V
VGS=-4V
t
r
t
f
td(on)
-
1.0
-
D
Ta PD-
2
×0.8mm)
-
10
IDP=-6A
7
5
3
2
–A
-
1.0
7
D
,I
5
3
2
-
0.1
7
Drain Current
5
3
Tc=25°C
2
Single pulse
-
0.01
-
0.1
4
3.5
–W
D
3
2
1
Operation in this area
is limited by RDS(on).
Drain-to-Source Voltage, VDS–V
A S O
ID=-1.5A
23 5723 57 23
-
1.0
100ms
DC operation
Tc
100µs
10ms
-
10
1ms
Allowable Power Dissipation, P
0
20 6040 80 120100 140 1600
0
20 6040 80 120100 140 1600
Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C
No.6120–3/4
Page 4
2SJ560
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject to
change without notice.
PS No.6120–4/4
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