Datasheet 2SJ555 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.017Ω typ.

DS(on)

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

2SJ555

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-634A (Z)

2nd. Edition

Jun 1998

G

TO–3P

D

1. Gate

1

S

2

3

2. Drain
(Flange)

3. Source

2SJ555

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–60 A
–240 A
–60 A
–60 A
308 mJ
125 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.017 0.022 Ω ID = –30A, VGS = –10V

— 0.024 0.036 Ω ID = –30A, VGS = –4V
Forward transfer admittance |yfs| 2745—S ID = –30A, VDS = –10V
Input capacitance Ciss — 4100 — pF VDS = –10V
Output capacitance Coss — 2100 — pF VGS = 0
Reverse transfer capacitance Crss — 450 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 32 — ns VGS = –10V, ID = –30A

— 270 — ns RL = 1Ω

— 570 — ns

— 360 — ns

— –1.1 — V IF = –60A, VGS = 0

— 115 — ns IF = –60A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SJ555

Power vs. Temperature Derating

200

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

–10 V

–100

–4.5 V

–5 V

–80

D

–8 V

–60

–40

PulseTest

–4 V

–3.5 V

–1000

Maximum Safe Operation Area

–300
–100

D

–30
–10

Operation in

–3

this area is

–1

limited by R

Drain Current I (A)

–0.3

Ta = 25 °C

–0.1

–0.1 –0.3 –1 –3 –10

Drain to Source Voltage V (V)

–100

–80

D

Typical Transfer Characteristics

V = –10 V

DS

Pulse Test

–60

–40

10 µs

100 µs

PW = 10 ms (1 shot)

DC Operation (Tc = 25 °C)

DS(on)

1 ms

–30 –100

DS

25 °C

Drain Current I (A)

–20

0

–4 –8 –12 –16 –20

Drain to Source Voltage V (V)

–3 V

V = –2.5 V

GS

DS

Drain Current I (A)

–20

75 °C

Tc = –25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ555

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–2

–1.6

DS(on)

V (V)

–1.2

–0.8

–0.4

Drain to Source Saturation Voltage

–5 A

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

50

Ω

PulseTest

I = –50 A

D

40

DS(on)

R (m )

V = –4 V

GS

30

20

PulseTest

I = –50 A

D

–20 A
–10 A

GS

–50 A

–10 A

–10,–20A

–20 A

Static Drain to Source on State Resistance

100

Ω

vs. Drain Current

50

V = –4 V

20

DS(on)

R ( m )

GS

10

5

2

Drain to Source On State Resistance

1

–1 –3

–30 –100 –300

–10

Drain Current I (A)

PulseTest

D

Forward Transfer Admittance vs.

Drain Current

Tc = –25 °C

fs

100

30

10

3

75 °C

1

–10 V

–1000

25 °C

V = –10 V

10

GS

0.3

V = –10 V

DS

PulseTest

Forward Transfer Admittance |y | (S)

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

0.1
–0.1 –1 –10 –100

–0.3

Drain Current I (A)

–3 –30

D

4

2SJ555

Body–Drain Diode Reverse

1000

Recovery Time

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

–0.3

–0.1

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

–10

–3

–1

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

DS

–20

–50 V

–40

V

–60

GS

V = –50 V

DD

–80

Drain to Source Voltage V (V)

I = –60 A

D

0

80 160 240

Gate Charge Qg (nc)

–30

DR

V

DS

–25 V
–10 V

320

–100

0

–4

–8

–12

–16

–20–100

400

Typical Capacitance vs.

Drain to Source Voltage

50000

20000
10000

5000

Ciss

2000
1000

Capacitance C (pF)

500

200

Coss

Crss

100

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

Switching Characteristics

1000

500

GS

t

f

200

t

t

d(on)

r

100

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

10

–0.1

V = –10 V, V = –30 V

GS

PW = 10 µs, duty < 1 %

–0.3 –1

–3

Drain Current I (A)

t

DD

–10

V = 0

GS

f = 1 MHz

DS

d(off)

=

–30 –100

D

5

2SJ555

Reverse Drain Current vs.

Source to Drain Voltage

–100

–80

DR

–60

–40

–10 V

–5 V

V = 0

–20

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

PulseTest

GS

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

500

400

AR

300

200

100

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = –60 A

AP

V = –25 V

DD

duty < 0.1 %
Rg > 50

V – V

Ω

V

DSS

DSS DD

V

V

DS

(BR)DSS

6

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m 100 m 1 10

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.0 °C/W, Tc = 25 °C

P

DM

Pulse Width PW (S)

PW

T

Tc = 25°C

PW

D =

T

2SJ555

Switching Time Test Circuit Waveform

Vin Monitor

Vin

-10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

td(on)

10%

90%

10%

tr

td(off)

90%

90%

10%

t

f

7

2SJ555

Package Dimensions

16.0 max

0.5 typ

φ

3.2 ± 0.2

1.0 typ

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

2.0 typ

2.0 typ

1.0 ± 0.2

0.9 typ

1.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P

SC–65

—

8

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