Datasheet 2SJ554 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.028Ω typ.

DS(on)

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

2SJ554

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-628B (Z)

3rd. Edition

Jun 1998

TO–3P

G

D

1.Gate

1

S

2

3

2.Drain
(Flange)

3.Source

2SJ554

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–45 A
–180 A
–45 A
–45 A
173 mJ
100 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.028 0.037 Ω ID = –25A, VGS = –10V

— 0.038 0.055 Ω ID = –25A, VGS = –4V
Forward transfer admittance |yfs| 1830—S ID = –25A, VDS = –10V
Input capacitance Ciss — 2500 — pF VDS = –10V
Output capacitance Coss — 1300 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 25 — ns VGS = –10V, ID = –25A

— 160 — ns RL = 1.2Ω

— 350 — ns

— 240 — ns

— –1.1 — V IF = –45A, VGS = 0

— 100 — ns IF = –45A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SJ554

Power vs. Temperature Derating

200

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Cace Temperature Tc (°C)

Typical Output Characteristics

–50

–8 V

–40

–5 V

D

–30

–4 V

V = –10 V

GS

–20

PulseTest

–3.5 V

–3 V

–1000

–100

D

–10

Maximum Safe Operation Area

Operation in

–1

Ta = 25 °C

this area is
limited by R

DS(on)

Drain Current I (A)

–0.1

–0.1 –1 –10

Drain to Source Voltage V (V)

Typical Transfer Characteristics

V = –10 V

DS

PulseTest

D

–50

–40

–30

–20

100 µs

1 ms

PW = 10 m(1 shot)

DC Operation

10 µs

–100

–10

Drain Current I (A)

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–2.5 V

–2 V

DS

–10

Drain Current I (A)

Tc = 75 °C

25 °C

-25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ554

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–5

–4

DS(on)

V (V)

–3

–2

–1

Drain to Source Saturation Voltage

0

–10 A

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

0.1

Ω

PulseTest

vs. Temperature

0.08

DS(on)

R ( )

0.06
V = –4 V

GS

I = –50 A

D

–10 A

0.04

PulseTest

l =–50 A

D

–20 A

GS

–20 A

–50 A

–10,–20A

Static Drain to Source on State Resistance

1

vs. Drain Current

0.5

0.2

DS(on)

R ( )Ω

0.1

0.05

0.02

Drain to Source On State Resistance

0.01

V = –4 V

–1 –3

GS

–10 V

–30 –100 –300

–10

Drain Current I (A)

Forward Transfer Admittance vs.

100

fs

30

Drain Current

Tc = –25 °C

10

3

75 °C

1

PulseTest

–1000

D

25 °C

0.02

Static Drain to Source on State Resistance

V = –10 V

GS

0

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

0.3

V = –10 V

DS

PulseTest

0.1

Forward Transfer Admittance |y | (S)

–0.1 –1 –10 –100

–0.3

Drain Current I (A)

–3 –30

D

2SJ554

Body–Drain Diode Reverse

1000

Recovery Time

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

0.3

0.1

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

10

3

1

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

DS

–20

–50 V

I = –45 A

D

–40

V

–60

GS

V = –50 V

DD

–80

Drain to Source Voltage V (V)

0

40 80 120

Gate Charge Qg (nc)

DR

V

DS

–25 V
–10 V

160

30

100

200

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

300

100

Capacitance C (pF)

30

10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

0

–4

GS

1000

500

Switching Characteristics

200

–8

100

–12

–16

–20–100

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

10

–0.1

t

V = –10 V, V = –30 V
PW = 5 µs, duty < 1 %

–0.3 –1

Drain Current I (A)

t

d(off)

t

t

d(on)

GS

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

DS

f

r

DD

=

–3

–10

D

–30 –100

5

2SJ554

Reverse Drain Current vs.

Source to Drain Voltage

–50

–40

DR

–30

–20

–10 V

–5 V

V = 0

GS

–10

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

PulseTest

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

200

AR

160

120

80

40

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = –45 A

AP

V = –25 V

DD

duty < 0.1 %
Rg > 50

V – V

Ω

V

DSS

DSS DD

V

V

DS

(BR)DSS

6

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

γ

1

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

0.02

0.01

1shot pulse

Normalized Transient Thermao Impedance

0.01

10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.25 °C/W, Tc = 25 °C

P

DM

PW

T

D =

2SJ554

PW

T

Switching Time Test Circuit Waveform

Vin Monitor

Vin

-10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

7

2SJ554

Package Dimensions

16.0 max

0.5 typ

φ

3.2 ± 0.2

1.0 typ

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

2.0 typ

1.0 ± 0.2

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

0.9 typ

1.0 typ

2.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

HitachiCode

EIAJ

JEDEC

TO–3P
SC–65

—

8

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