Datasheet 2SJ542 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.050Ω typ.

DS(on)

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

2SJ542

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-591B (Z)

3rd. Edition

Jun 1998

TO–220AB

G

D

3

1. Gate

2. Drain
(Flange)

3. Source

1

2

S

2SJ542

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–18 A
–72 A
–18 A
–18 A
27 mJ
60 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.050 0.065 Ω ID = –9A, VGS = –10V

— 0.070 0.110 Ω ID = –9A, VGS = –4V
Forward transfer admittance |yfs|1016—S ID = –9A, VDS = -10V
Input capacitance Ciss — 1300 — pF VDS = –10V
Output capacitance Coss — 650 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 14 — ns VGS = –10V, ID = –9A

— 95 — ns RL =3.33Ω

— 190 — ns

— 135 — ns

— –1.0 — V IF = –18A, VGS = 0

— 70 — ns IF = –18A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SJ542

Power vs. Temperature Derating

80

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

–6 V

–10 V

–20

–4 V

–16

D

–3.5 V

–12

–8

Drain Current I (A)

–4

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

Pulse Test

–3 V

–2.5 V

V = –2 V

GS

DS

1000

Maximum Safe Operation Area

300
100

D

30
10

3
1

Operation in
this area is

Drain Current I (A)

limited by R

0.3
Ta = 25 °C

0.1

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

–20

V = –10 V

DS

Pulse Test

–16

D

–12

–8

Drain Current I (A)

–4

0

Tc = 75°C

–1 –2 –3 –4 –5

Gate to Source Voltage V (V)

10 µs

10

100 µs

1 ms

30

DS

100

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

DS(on)

3

25°C

–25°C

GS

3

2SJ542

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–3.0

–2.5

DS(on)

–2.0

V (V)

–1.5

–1.0

–0.5

Drain to Source Saturation Voltage

0

–4 –8

–12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.30

Ω

Pulse Test

0.25

DS(on)

0.20

R ( )

I = –20 A

0.15

0.10

V = –4 V

GS

D

Static Drain to Source on State Resistance

vs. Drain Current

Pulse Test

1

Pulse Test

0.5

DS(on)

0.2

R ( )Ω

I = –20 A

D

0.1

0.05

V = –4 V

GS

–10 V

–10 A

–5 A

0.02

Drain to Source On State Resistance

0.01

–16 –20 –1 –5 –20 –100–2 –10 –50

GS

Drain Current I (A)

Forward Transfer Admittance vs.

Drain Current

100

fs

30

Tc = –25 °C

10

–5, –10 A

3

25 °C

75 °C

1

D

0.05
–10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

–5, –10, –20 A

0.3

Forward Transfer Admittance |y | (S)

0.1
–0.1 –1 –10 –100

–0.3

Drain Current I (A)

V = –10 V

DS

Pulse Test

–3 –30

D

2SJ542

Body–Drain Diode Reverse

Recovery Time

100

50

20

di / dt = 50 A / µs

Reverse Recovery Time trr (ns)

10

–0.2

–0.1

V = 0, Ta = 25 °C

GS

–0.5

–1 –2 –10 –20

–5

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

DS

–20

–40

V

DS

–60

–80

Drain to Source Voltage V (V)

–100

V = –50 V

DD

–25 V
–10 V

I = –18 A

D

0

16 32 48 64 80

–50 V

V

GS

Gate Charge Qg (nc)

DR

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

300

100

Capacitance C (pF)

30
10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

Switching Characteristics

0

–4

GS

1000

V = –10 V, V = –30 V

GS

PW = 5 µs, duty < 1 %

500

200

–8

100

–12

–16

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

–20

10

–0.1

–0.2

–0.5

Drain Current I (A)

V = 0
f = 1 MHz

Ciss

Coss

Crss

DD

t

d(off)

t

f

t

r

t

d(on)

–1 –2 –10 –20–5

D

GS

DS

5

2SJ542

Reverse Drain Current vs.

–20

Source to Drain Voltage

–10 V

–16

DR

–12

–5 V

V = 0, 5 V

GS

–8

–4

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

50

I = –18 A

AR

40

V = –25 V
duty < 0.1 %
Rg > 50

30

20

10

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

AP

DD

V – V

DSS DD

V

Ω

DSS

V

DS

V

(BR)DSS

6

2SJ542

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 2.08 °C/W, Tc = 25 °C

P

DM

PW
T

D =

100 m 1 10

PW

T

Switching Time Test Circuit Waveform

Vin Monitor

Vin
–10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

10%

90%

10%

td(on)

90%

90%

10%

tr

td(off)

t

f

7

2SJ542

Package Dimensions

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

8

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