Datasheet 2SJ532 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.042Ω typ.

DS(on)

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

2SJ532

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-653B (Z)

3rd. Edition

Jun 1998

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SJ532

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–20 A
–80 A
–20 A
–20 A
34 mJ
30 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.042 0.055 Ω ID = –10A, VGS = –10V

— 0.065 0.095 Ω ID = –10A, VGS = –4V
Forward transfer admittance |yfs| 1016—S ID = –10A, VDS = –10V
Input capacitance Ciss — 1750 — pF VDS = –10V
Output capacitance Coss — 800 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 16 — ns VGS = –10V, ID = –10A

— 100 — ns RL = 3Ω

— 230 — ns

— 140 — ns

— –1.0 — V IF = –20A, VGS = 0

— 100 — ns IF = –20A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SJ532

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

D

–50

–40

–10 V
–8 V

–4.5 V

–6 V

–5 V

–30

–20

Pulse Test

–4 V

–3.5 V

–1000

Maximum Safe Operation Area

–300
–100

D

–30
–10

DC Operation (Tc = 25 °C)

–3
–1

Operation in
this area is

Drain Current I (A)

limited by R

–0.3

Ta = 25 °C

–0.1

–0.1 –0.3 –1 –3 –10

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–50

V = –10 V

DS

Pulse Test

–40

D

–30

–20

PW = 10 ms (1 shot)

DS(on)

Tc = –25 °C

25 °C

10 µs

100 µs

1 ms

–30 –100

DS

Drain Current I (A)

–10

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–3 V

V = –2.5 V

GS

DS

Drain Current I (A)

–10

75 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ532

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–2.0

Pulse Test

–1.6

DS(on)

V (V)

–1.2

I = –20 A

–0.8

–0.4

D

–10 A

Drain to Source Saturation Voltage

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.2
Pulse Test

Ω

0.16

DS(on)

R ( )

0.12

0.08

V = –4 V

GS

0.04

I = –20 A

D

–10 A

–5, –10 A

–10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

–5 A
–2 A

GS

–5 A

–20 A

Static Drain to Source on State Resistance

vs. Drain Current

1

0.5

0.2

DS(on)

R ( )Ω

0.1
V = –4 V

GS

0.05

0.02

Drain to Source On State Resistance

0.01

–1 –2

–5

–10 –20

Drain Current I (A)

Pulse Test

D

Forward Transfer Admittance vs.

Drain Current

100

fs

30

Tc = –25 °C

10

3

25 °C

75 °C

1

0.3

Forward Transfer Admittance |y | (S)

0.1

–0.1 –1 –10 –100

–0.3

Drain Current I (A)

V = –10 V

DS

Pulse Test

–3 –30

D

–10 V

–50

–100

4

2SJ532

Body–Drain Diode Reverse

Recovery Time

1000

Pulse Test

500

200

100

50

20

Reverse Recovery Time trr (ns)

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

10

–0.1 –0.3 –1 –3 –10 –30 –100

Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

0

V = –10 V

DD

DS

–20

V

–40

DS

–60

–80

Drain to Source Voltage V (V)

I = –20 A

D

0

16 32 48

–25 V
–50 V

V = –10 V

DD

–25 V
–50 V

V

GS

64

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

V = 0

GS

f = 1 MHz

10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

0

–4

1000

500

GS

Switching Characteristics

200

–8

100

–12

–16

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

–20–100

80

10

–0.1 –0.3

Ciss

Coss

Crss

DS

V = –10 V, V = –30 V

GS

DD

PW = 10 µs, duty < 1 %

td(off)

tf

tr

td(on)

–1 –10 –30

–3

Drain Current I (A)

D

–100

5

2SJ532

Reverse Drain Current vs.

–50

–40

DR

–30

–20

Source to Drain Voltage

–10 V

V = 0, 5 V

–5 V

–10

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

GS

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

50

AR

40

30

20

10

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = –20 A

AP

V = –25 V

DD

duty < 0.1 %
Rg > 50

V – V

Ω

V

DSS

DSS DD

V

V

DS

(BR)DSS

6

s (t)

γ

0.3

0.1

2SJ532

Normalized Transient Thermal Impedance vs. Pulse Width

3

Tc = 25°C

1

D = 1

0.5

0.2

θ γ θ

0.1

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17°C/W, Tc = 25°C

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Switching Time Test Circuit

Vin Monitor

Vout
Monitor

D.U.T.

R

L

V

Vin
–10 V

50Ω

DD

= –30 V

P

DM

Pulse Width PW (S)

Vin

10%

Vout

PW

D =

T

PW

T

100 m 1 10

Waveform

90%

90%

10%

90%

10%

td(on)

tr

td(off)

t

f

7

2SJ532

Package Dimensions

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

φ

3.2 ± 0.2

4.1 ± 0.3 12.0 ± 0.3

2.54 ± 0.5

4.5 ± 0.3

2.5 ± 0.2

2.7 ± 0.2

15.0 ± 0.3

13.6 ± 1.0

0.7 ± 0.1

Hitachi Code

EIAJ

JEDEC

TO–220CFM

—
—

8

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