Datasheet 2SJ529-S, 2SJ529-L Datasheet (HIT)

2SJ529(L),2SJ529(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-654A (Z)

2nd. Edition

Jun 1998

Features

• Low on-resistance

R

DS(on)

= 0.12 Ω typ.

• 4 V gete drive devices

• High speed switching

Outline

1

2

3

4

4

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

DPAK–2

D

G

S

2SJ529(L),2SJ529(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–10 A

Drain peak current I

D(pulse)

Note1

–40 A

Body-drain diode reverse drain current I

DR

–10 A

Avalenche current I

AP

Note3

–10 A

Avalenche energy E

AR

Note3

8.5 mJ

Channel dissipation Pch

Note2

20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current I

DSS

— — –10 µAVDS = –60 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state R

DS(on)

— 0.12 0.16 Ω ID = –5A, VGS = –10V

Note4

resistance R

DS(on)

— 0.17 0.24 Ω ID = –5A, VGS = –4V

Note4

Forward transfer admittance |yfs| 4.5 7.5 — S ID = –5A, VDS = –10V

Note4

Input capacitance Ciss — 580 — pF VDS = –10V
Output capacitance Coss — 300 — pF VGS = 0
Reverse transfer capacitance Crss — 85 — pF f = 1MHz
Turn-on delay time t

d(on)

— 10 — ns VGS = –10V, ID = –5A

Rise time t

r

— 40 — ns RL = 6Ω

Turn-off delay time t

d(off)

—85—ns

Fall time t

f

—60—ns

Body–drain diode forward voltage V

DF

— –1.2 — V IF = –10A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 60 — ns IF = –10A, VGS = 0

diF/ dt = 50A/µs

Note: 4. Pulse test

2SJ529(L),2SJ529(S)

3

Main Characteristics

40

30

20

10

0

50 100 150 200

–10

–8

–6

–4

–2

0

–2 –4 –6 –8 –10

–5 V
–4 V

0 –1–2–3–4–5

–10 V

–3.5 V

–3 V

–10

–8

–6

–4

–2

–2.5 V

–25 °C

25 °CTc = 75 °C

V = –2 V

GS

DS

Pulse Test

V = –10 V

–0.1 –0.3 –1 –3 –10 –30 –100

–100

–20
–10

–2
–1

–0.2
–0.1

1 ms

Ta = 25 °C

100 µs

10 µs

–0.5

–5

–50

PW = 10 ms (1 shot)

DC Operation (Tc=25°C)

Pulse Test

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)

2SJ529(L),2SJ529(S)

4

–1.0

–0.8

–0.6

–0.4

–0.2

0

–4 –8 –12 –16 –20

0.5

0.4

0.3

0.2

0.1

–40 0 40 80 120 160

0

–10 V

I = –5 A

D

GS

V = –4 V

–0.1 –1 –10

0.1

10

20

5

1

0.5

–0.2 –0.5 –2 –5

1

0.5

0.05

0.02

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

–1, –2 A

I = –5 A

D

–2 A

–1 A

0.2

0.1

–10 V

V = –4 V

GS

–1 A

–2 A

–5 A

2

75 °C

25 °C

Ta = –25 °C

Pulse Test

Pulse Test

Pulse Test

V = –10 V

DS

Pulse Test

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

2SJ529(L),2SJ529(S)

5

500

200

100

20

50

10

5

–0.1 –0.2 –1 –5 –10

0 –10 –20 –30 –40 –50

2000
1000

500

200
100

50

0

–20

–40

–60

–80

0

0

–4

–8

–12

–16

–20–100

81624

32

40

1000

100

300

30

3

10

1
–0.1 –0.2 –0.5 –1 –2 –5

–10

–0.5 –2

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

20
10

V = 0
f = 1 MHz

GS

Ciss

Coss

Crss

DS

V

GS

V

V = –10 V

–25 V
–50 V

DD

D

I = –10 A

V = –10 V

–25 V
–50 V

DD

t

f

r

t

d(off)

t

d(on)

t

DD

V = –10 V, V = –30 V
Pw = 5 µs, duty < 1 %

GS

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

2SJ529(L),2SJ529(S)

6

–10

–8

–6

–4

–2

0

–0.4 –0.8 –1.2 –1.6 –2.0

D. U. T

Rg

I
Monitor

AP

V
Monitor

DS

V

DD

50Ω

Vin
–15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

V = 0, 5 V

GS

–10 V

–5 V

Pulse Test

20

16

12

8

4

25 50 75 100 125 150

0

I = –10 A
V = –25 V
duty < 0.1 %
Rg ≥ 50

AP

DD

Ω

Repetitive Avalanche Energy E (mJ)

AR

Maximum Avalanche Energy vs.

Channel Temperature Derating

Avalanche Test Circuit Avalanche Waveform

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Channel Temperature Tch (°C)

2SJ529(L),2SJ529(S)

7

Vin Monitor

D.U.T.

Vin
–10 V

R

L

V
= –30 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Waveform

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C

θ γ θ
θ

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

γ

Normalized Transient Thermal Impedance vs. Pulse Width

2SJ529(L),2SJ529(S)

8

Package Dimensions

Unit: mm

6.5 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.3 ± 0.2

0.55 ± 0.1

2.29 ± 0.5

0.55 ± 0.1 1.2 typ

1.7 ± 0.5

5.5 ± 0.53.1 ± 0.5

16.2 ± 0.5

2.29 ± 0.5

6.5 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.3 ± 0.5

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

9.5 ± 0.5

2.5 ± 0.5

2.29 ± 0.5

2.29 ± 0.5

1.2 Max

0.55 ± 0.1

0 ~ 0.25

0.8 ± 0.1

type

L

S

type

4.7 ± 0.5

Hitachi

EIAJ ( L type)

EIAJ ( S type)

JEDEC

DPAK–2

SC–63
SC–64

—

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