Datasheet 2SJ526 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.11 Ω typ.

DS(on)

• Low drive current

• 4 V gete drive devices

• High speed switching

Outline

2SJ526

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-579B (Z)

4th. Edition

Jun 1998

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SJ526

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalenche current I
Avalenche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

AR

Note1

Note3

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–12 A
–48 A
–12 A
–12 A
12 mJ
25 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|58—SI

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.11 0.15 Ω ID = –6A, VGS = –10V
— 0.16 0.23 Ω ID = –6A, VGS = –4V

= –6A, VDS = –10V

D

Input capacitance Ciss — 580 — pF VDS = –10V
Output capacitance Coss — 300 — pF VGS = 0
Reverse transfer capacitance Crss — 85 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 10 — ns VGS = –10V, ID = –6A
— 55 — ns RL = 6Ω
—85—ns
—60—ns
— –1.2 — V IF = –12A, VGS = 0
— 60 — ns IF = –12A, VGS = 0

diF/ dt = 50A/µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SJ526

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

–10

–10 V

–5 V

–8

–4 V

–3.5 V

–1000

–300

–100

D

–30
–10

–3

Drain Current I (A)

–1

–0.3
–0.1

Maximum Safe Operation Area

Operation in
this area is
limited by R

Ta = 25 °C

–0.1 –0.3 –1 –3 –10

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–10

V = –10 V

DS

Pulse Test

–8

10 µs

100 µs

1 ms

PW = 10 ms

(1 shot)

DC Operation

DS(on)

–30 –100

DS

D

–6

–4

Drain Current I (A)

–2

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

Pulse Test

–3 V

–2.5 V

V = –2 V

GS

DS

D

–6

–4

25 °CTc = 75 °C

Drain Current I (A)

–2

–25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ526

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.0

Pulse Test

–0.8

DS(on)

V (V)

–0.6

I = –5 A

D

–0.4

–0.2

Drain to Source Saturation Voltage

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.5

Ω

Pulse Test

0.4

DS(on)

R ( )

0.3

0.2

V = –4 V

GS

I = –5 A

D

–5 A

0.1
–10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

–2 A

–1 A

GS

–2 A

–1 A

–1, –2 A

Static Drain to Source on State Resistance

vs. Drain Current

1

0.5

0.2

DS(on)

R ( )Ω

0.1

V = –4 V

GS

–10 V

0.05

0.02

Drain to Source On State Resistance

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I (A)

Pulse Test

D

Forward Transfer Admittance vs.

Drain Current

20

fs

10

Ta = –25 °C

5

2

75 °C

1

0.5
V = –10 V

DS

Forward Transfer Admittance |y | (S)

0.1

–0.1 –1 –10

–0.2 –0.5 –2 –5

Drain Current I (A)

Pulse Test

D

25 °C

4

2SJ526

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

–0.1 –0.2 –1 –5 –10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

–0.5 –2

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

I = –10 A

D

DS

–20

V = –10 V

DD

–25 V
–50 V

–40

V

DS

V

GS

–60

V = –50 V

DD

–80

–25 V
–10 V

Drain to Source Voltage V (V)

0

81624

32

Gate Charge Qg (nc)

DR

2000
1000

500

200
100

50

Capacitance C (pF)

20
10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

0

–4

GS

1000

300

Switching Characteristics

100

–8

30

–12

10

–16

Switching Time t (ns)

3

Gate to Source Voltage V (V)

–20–100

40

1

–0.1 –0.2 –0.5 –1 –2 –5

Typical Capacitance vs.
Drain to Source Voltage

V = 0

GS

f = 1 MHz

Ciss

Crss

Coss

DS

V = –10 V, V = –30 V

GS

DD

Pw = 5 µs, duty < 1 %

t

d(off)

t

f

t

r

t

d(on)

Drain Current I (A)

D

–10

5

2SJ526

Reverse Drain Current vs.

Source to Drain Voltage

–10

–8

DR

–6

–10 V

V = 0, 5 V

–4

–5 V

GS

–2

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

20

AR

16

12

8

4

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = –12 A

AP

V = –25 V

DD

duty < 0.1 %
Rg > 50

Ω

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

2SJ526

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 5.0°C/W, Tc = 25°C

P

DM

PW

T

D =

100 m 1 10

PW

T

Switching Time Test Circuit Waveform

Vin Monitor

Vin
–10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

10%

90%

10%

td(on)

90%

90%

10%

tr

td(off)

t

f

7

2SJ526

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1
Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–72

—

8

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