Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6435
2SJ520
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 2.5V drive.
Package Dimensions
unit:mm
2083B
[2SJ520]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
2.3
1.5
7.0
5.5
1.6
1.2
7.5
0.5
unit:mm
2092B
6.5
5.0
[2SJ520]
1.55.5
2.3
0.5
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
31000TS (KOTO) TA-2505 No.6435–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Page 2
2SJ520
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
Marking : J520
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
SSD)RB(
D
V
SSD
V
SSG
)ffo(VSDI,V01–=
SG
R
1)no(IDV,A5–=
SD
R
2)no(IDV,A1–=
SD
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
SD
SD
V,A5–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1–=4.0–3.1–V
D
A5–=821S
D
V4–=8426mΩ
SG
V5.2–=07001mΩ
SG
zHM1=f,V01–=059Fp
zHM1=f,V01–=035Fp
zHM1=f,V01–=061Fp
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS032sn
tiucriCtseTdeificepseeS032sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A5–=03Cn
D
A5–=5Cn
D
A5–=7Cn
D
02–V
01±V
01–A
04–A
1W
02W
˚C
˚C
tinU
Switching Time Test Circuit
VDD=--10V
V
IN
0V
--4V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
ID=--5A
RL=2Ω
V
D
OUT
2SJ520
S
No.6435–2/4
Page 3
--10
--9
--8
--7
–A
--6
D
--5
--4
--3
Drain Current, I
--2
--1
0
0
--0.2
Drain-to-Source Voltage, VDS–V
100
90
80
ID=--1A
70
–mΩ
(on)
60
DS
50
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
--5A
Gate-to-Source Voltage, V
100
7
5
3
fs|–S
2
y
10
7
5
3
2
Tc=--25
--0 .1
Drain Current, ID–A
t
f
2 3 57 2 3 57
Drain Current, ID–A
Switching Time, SW Time – ns
Forward Transfer Admittance, |
1000
100
1.0
0.1
10
7
5
3
2
--0.01
7
5
3
2
7
5
3
2
--0 .1
I
-- V
D
--8.0V
--6.0V
--4.0V
DS
--3.0V
--2.5V
--2.0V
VGS=--1.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
GS
--7 --8 --9 --10
–V
GS
yfs -- I
°C
75°C
SW Time -- I
td(off)
td(on)
--1 .0
D
VDS=--10V
25°C
23 5723 5723 57
--1 .0
D
VDD=--10V
VGS=--4V
t
r
IT00944
Tc=25°C
IT00946
IT00948
IT00950
2SJ520
--1 0
--1 0
I
-- V
--10
VDS=--10V
--9
--8
--7
–A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5
D
GS
Tc=75°C
°C
--25
25°C
Gate-to-Source Voltage, VGS–V
140
120
–mΩ
100
(on)
80
DS
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 40--40 --20 12020 60 80 100 1601400
RDS(on) -- T
=- -1.0A, V
I
D
=- -5.0A, V
I
D
GS
GS
C
=- -2.5V
=- -4.0V
Case Temperature, Tc – ˚C
I
-- V
F
--1 0
V
= 0
7
GS
5
3
2
–A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Tc=75°C
SD
°C
25°C
--25
Diode Forward Voltage, VSD–V
10000
1000
Ciss, Coss, Crss – pF
100
7
5
3
2
7
5
3
2
0--2
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--4 --6
--8 --20--10 --12 --14 --16 --18
Drain-to-Source Voltage, VDS–V
IT00945
IT00947
IT00949
DS
f=1MHz
IT00951
No.6435–3/4
Page 4
2SJ520
--1 0
--9
V
--8
–
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source Voltage, V
--1
1.2
1.0
–W
D
0.8
0.6
0.4
VDS=--10V
ID=--5A
0
0
VGS -- Qg
Total Gate Charge, Qg – nC
P
-- Ta
D
IT00952
--100
7
I
=--40A
DP
5
3
2
I
=--10A
DP
--10
–A
7
D
5
,I
3
2
Operation in this
--1 .0
area is limited by RDS(on).
7
Drain Current
5
3
2
Tc=25°C
Single pulse
302515 20510
--0 .1
--0 .1
25
–W
20
D
15
10
23 57 23 57 23 5
Drain-to-Source Voltage, VDS–V
A S O
10ms
100ms
DC operation
--1.0 --10
P
-- Tc
D
1ms
100µs
IT00953
0.2
Allowable Power Dissipation, P
0020 40 60
Ambient Temperature, Ta – ˚C
80 100 120
140 160
IT00954
5
Allowable Power Dissipation, P
0020 40 60
Case Temperature, Tc – ˚C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
80 100 120
140 160
IT00955
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6435–4/4
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