Datasheet 2SJ518 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.35 Ω typ. at (VGS = –10V, ID = –1A)

DS(on)

• Low drive current

• 4 V gete drive devices

• High speed switching

Outline

2SJ518

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-580B (Z)

3rd. Edition

Jun 1998

G

UPAK

1

2

3

D

4

1. Gate

2. Drain

3. Source

S

4. Drain

2SJ518

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalenche current I
Avalenche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note2

AP

AR

Note1

Note3

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. value at Tch = 25°C, Rg ≥ 50 Ω

3. Value at when using the aluminaceramic board (12.5x20x0.7mm)

Electrical Characteristics (Ta = 25°C)

–60 V
±20 V
–2 A
–4 A
–2 A
–2 A

0.34 mJ
1W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

–60 — — V ID = –10mA, VGS = 0
±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.35 0.46 Ω ID = –1A, VGS = –10V

— 0.45 0.63 Ω ID = –1A, VGS = –4V
Forward transfer admittance |yfs| 1.2 2.0 — S ID = –1A, VDS = –10V
Input capacitance Ciss — 220 — pF VDS = –10V
Output capacitance Coss — 110 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 10 — ns VGS = –10V, ID = –1A

— 11 — ns RL = 30Ω

—45—ns

—30—ns

— –1.05 — V ID = –2A, VGS = 0

— 50 — ns IF = –2A, VGS = 0

diF/ dt = 50A/µs

Note: 4. Pulse test

5. Marking is “AZ”

Note4

Note4

Note4

2

Main Characteristics

2SJ518

Power vs. Temperature Derating

2.0
Test Condition :

When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–5

–10 V

–6 V

–4

–5 V

Pulse Test

–100

–30

–10

D

–0.3

Drain Current I (A)

–0.1

–0.03
–0.01

Maximum Safe Operation Area

–3
–1

Operation in
this area is
limited by R

DS(on)

Ta = 25 °C

–0.1 –0.3 –1 –3 –10

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–5

V = –10 V

DS

Pulse Test

–4

100 µs

PW = 10 ms

(1 shot)

DC Operation

1 ms

–30 –100

DS

D

–4 V

–3

–2

Drain Current I (A)

–1

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–3.5 V

–3 V

V = –2.5 V

GS

DS

D

–3

–2

Tc = 75 °C

Drain Current I (A)

–1

25 °C

–25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ518

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–5

Pulse Test

–4

DS(on)

V (V)

–3

–2

–1

–0.5 A

I = –2 A

D

Drain to Source Saturation Voltage

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

1.0
Pulse Test

Ω

0.8

DS(on)

R ( )

I = –2 A

D

–0.5, –1 A

0.6
V = –4 V

GS

0.4

–2 A

–0.5, –1 A

0.2

–10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

–1 A

GS

Static Drain to Source on State Resistance

vs. Drain Current

10

5

DS(on)

2

R ( )Ω

1

V = –4 V

0.5

GS

–10 V

0.2

Drain to Source On State Resistance

0.1

Pulse Test

–0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

10

fs

5

Ta = –25 °C

2

1

75 °C

0.5

0.2

Forward Transfer Admittance |y | (S)

0.1
–0.1 –1 –10

–0.2 –0.5 –2 –5

Drain Current I (A)

V = –10 V

DS

Pulse Test

D

25 °C

4

2SJ518

Body–Drain Diode Reverse

Recovery Time

100

50

20

di / dt = 50 A / µs

Reverse Recovery Time trr (ns)

10

–0.1 –0.2 –1 –5 –10

Reverse Drain Current I (A)

V = 0, Ta = 25 °C

GS

–0.5 –2

DR

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

V

GS

–50 V

V = –10 V

DD

–25 V
–50 V

DS

–20

–40

–60

V

DS

–80

Drain to Source Voltage V (V)

I = –2 A

D

0

4812

16

Gate Charge Qg (nc)

Typical Capacitance vs.

1000

Drain to Source Voltage

300

100

30

10

Capacitance C (pF)

3

V = 0

GS

f = 1 MHz

1

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

0

–4

100

50

GS

Switching Characteristics

20

–8

10

–12

–16

5

Switching Time t (ns)

2

Gate to Source Voltage V (V)

–20–100

20

1

–0.1 –0.2 –0.5 –1 –2 –5

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

d(on)

t

r

V = –10 V, V = –30 V

GS

DD

Ta = 25°C, duty < 1 %

Drain Current I (A)

D

–10

5

2SJ518

Reverse Drain Current vs.

Source to Drain Voltage

–5

–4

DR

–3

–2

–10 V

–5 V

V = 0, 5 V

GS

–1

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
–15 V

50Ω

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

0.5

AR

0.4

0.3

0.2

0.1

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = –2 A

AP

V = –25 V

DD

duty < 0.1 %
Rg > 50

Ω

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

Switching Time Test Circuit Waveform

2SJ518

Vin Monitor

Vin
–10 V

50Ω

D.U.T.

Vout
Monitor

R

L

V

DD

= –30 V

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

7

2SJ518

Package Dimensions

4.5 ± 0.1

1.8 max

4

0.53 max

0.48 max

1

1.5

f

1

23

1.5

3.0

1.5 ± 0.1

0.4

2.5 ± 0.1

4.25 max

0.8 min

Unit: mm

0.44 max

0.44 max

Hitachi Code

EIAJ

JEDEC

UPAK

SC–62

UPAK

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX