Datasheet 2SJ503 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN5932

2SJ503

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Package Dimensions

unit:mm

2083B

[2SJ503]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

7.0

5.5

1.6

1.2

7.5

0.5

unit:mm

2092B

6.5

5.0

[2SJ503]

1.55.5

2.3

0.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

31000TS (KOTO) TA-2512 No.5932–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SJ503

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

SSD
SSG

D

PW≤10µs, duty cycle≤1%

PD

D

Tc=25˚C

I

SSD)RB(

D

V

SSD

V

SSG

)ffo(VSDI,V01–=

SG

R

1)no(IDV,A4–=

SD

R

2)no(IDV,A2–=

SD

)no(d

r

)ffo(d

f

I

DS

S

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG

SD
SD
SD

V,A4–=

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–5.2–V

D

A4–=46S

D

V01–=5658mΩ

SG

V4–=031081mΩ

SG

zHM1=f,V01–=074Fp
zHM1=f,V01–=082Fp
zHM1=f,V01–=041Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS54sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

A4–=51Cn

D

A4–=3Cn

D

A4–=4Cn

D

03–V
02±V
4–A
61–A

0.1W
02W

˚C
˚C

tinU

Switching Time Test Circuit

VDD=—15V

V

IN

0V

—10V

PW=10µs
D.C.≤1%

P.G

V

IN

G

50Ω

D

ID=—4A
RL=3.75Ω

S

V

OUT

2SJ503

No.5932–2/4

ID-

V

4.5V

-

4.0V

-

DS

3.5V

-

-

5

-

4

–A

D

-

3

-

2

-

8.0V

10.0V

-

-

6.0V

5.0V

-

Drain Current, I

-

1

0

0-0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

25°C

-

75°C

D

-

1.0

10

VDS=-10V

7
5

3

fs | – S

2

y

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, |

0.01
23 57 23 57 23 57

-

0.01

Tc=

-

0.1

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

R

2A,V

-

=

I

D

4A,V

-

=

I

D

020

DS(on)

300

250

–mΩ

200

DS(on)

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

-20-40-

60 40 60 80 100 120 160140

GS

GS

-

Tc

4V

-

=

10V

-

=

Case Temperature, Tc– ˚C

10000

1000

Ciss, Coss, Crss – pF

100

7
5

3
2

7
5

3
2

7
5

3
2

10

0

Ciss,Coss,Crss-V

-

5

-

10

-

15

-

20

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

DS

V

GS

-

3.0V

-

=

25°C

f=1MHz

Ciss

Coss

Crss

25

2SJ503

-

10

-

30 6 12 1628410140

-

8

VDS=-10V

-

7

-

6

–A

-

5

D

-

4

-

3

Drain Current, I

-

2

-

1

0

0

-

-

0.5

Gate-to-Source Voltage, VGS–V

200

180

160

–mΩ

140

120

DS(on)

100

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

-

10

VGS=0

7
5

3
2

–A

-

1.0

F

7
5

3
2

-

0.1
7
5

Forward Current, I

3
2

-

0.01
0

ID=-4A

-

2A

-20-4-6-8-10-12-14-16-18-

-

0.2-0.4-0.6

Diode Forward Voltage, VSD–V

-

10

VDS=-10V

-

9

ID=

-

V

–

GS

Gate-to-Source Voltage, V

4A

-

8

-

7

-

6

-

5

-

4

-

3

-

2

-

1
0

1.0

-

1.5

R

DS(on)

Tc=75°C

V

ID-

IF-

25°C

GS

V

GS

°C

25°C

-

Tc=75

25°C

-

2.0

-

3.0

-

2.5

-

V

GS

-

4.0

-

3.5

Tc=25°C

20

V

SD

25°C

-

-

1.0

-

0.8

-

Qg

-

1.4

-

1.2

No.5932–3/4

2SJ503

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

1.2

1.0

–W

D

0.8

0.6

SW Time

t

f

23 57 2 23577

-

0.1

Drain Current, ID–A

P

No heat sink

D

t

(off)

d

td(on)

-

1.0

-

I

D

VDD=-15V
VGS=

-

10V

t

r

-

10

3
2

IDP=-16A

-

10

7
5

3

–A

2

D

Operation in this area

,I

-

1.0

is limited by RDS(on).

7
5

3
2

Drain Current

-

0.1
7

Ta=25°C

5

Single pulse

3

23 57 23 57 23 5

ID=-4A

A S O

100µs

1ms

10ms

DC operation

-

1.0

-

10

Drain-to-Source Voltage, VDS–V

-

Ta

24

20

–W

D

16

12

PD-

Tc

0.4

0.2

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C

8

4

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.5932–4/4