Datasheet 2SJ502 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6178A

2SJ502

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.4

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Package Dimensions

unit:mm

2091A

[2SJ502]

3

1

0.95

0.95

1.9

2.9

0.5

1.5

2

0.5

0.8

0.16

2.5

0 to 0.1

1 : Gate

1.1

2 : Source
3 : Drain
SANYO : CP

03–V
02±V

5.0–A

0.2–A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D
D

V,Am003–=
V,Am003–=

Am003–=003008Sm
V01–=063006mΩ

SG

V4–=096079mΩ

SG

nimpytxam

Marking : FM Continued on next page.

81000TS (KOTO) TA-2363 No.6178–1/4

sgnitaR

tinU

2SJ502

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

VDD=—15V

ID=—300mA
RL=50Ω

D

V

OUT

0V

—10V

V

IN

PW=10µs
D.C.≤1%

V

IN

G

zHM1=f,V01–=09Fp
zHM1=f,V01–=05Fp
zHM1=f,V01–=02Fp

tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS52sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

V,Am005–=

0=39.0–5.1–V

SG

sgnitaR

nimpytxam

D
D
D

Am005–=4Cn
Am005–=1Cn
Am005–=1Cn

tinU

-

0.6

-

0.5

-

0.4

–A

D

-

0.3

-

0.2

P.G

-

8.0V

10V

-

-

50Ω

6.0V

-

4.0V

ID-

-

V

3.5V

2SJ502

S

DS

Drain Current, I

-

0.1

0

0-0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0

V

GS

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

D

VDS=-10V

°C

25

-

Ta=

75°C

23 5723 57 23

-

1.0

y

fs|–S

Forward Transfer Admittance, |

0.01

1.0

0.1

10

7
5

3
2

7
5

3
2

7
5

3
2

-

0.01

-

0.1

Drain Current, ID–A

-

=

25°C

-

2.5V

3.0V

-

2.0

VDS=-10V

-

1.8

-

1.6

-

1.4

–A

D

-

1.2

-

1.0

-

0.8

-

0.6

Drain Current, I

-

0.4

-

0.2
0

0

1000

900

800

–mΩ

700

600

DS(on)

500

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

-

-

0.5

ID=-0.3A

-20-4-6-8-10-12-14-16-18-

Gate-to-Source Voltage, VGS–V

ID-

V

GS

1.0

-

2.0

-

1.5

-

3.0

-

-

2.5

3.5

Gate-to-Source Voltage, VGS–V

R

DS(on)

-

V

GS

25°C

-

25°C

Ta=

75°C

-

4.0-4.5

Ta=25°C

20

No.6178–2/4

R

1200
1100
1000

900

–mΩ

800
700

DS(on)

600
500
400
300
200

Static Drain-to-Source

On-State Resistance, R

100

0

60 40 60 80 100 120 160140

-20-40-

DS(on)

-

=

I

D

-

=

I

D

020

0.3A,V

0.3A,V

GS

GS

-

=

=

Ambient Temperature, Ta – ˚C

1000

Ciss, Coss, Crss – pF

100

7
5

3
2

7
5

3
2

10

0

Ciss,Coss,Crss-V

-

5

-

10

-

15

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

100

7
5

3
2

10

7
5

3

Switching Time, SW Time – ns

2

1.0

SW Time

-

0.1

-

t

(off)

d

t

r

23 2357357

Drain Current, ID–A

-

0.30

P

D

Ta

-

-

t

4V

10V

f

Ta

-

20

I

D

td(on)

DS

-

25

VDD=-15V
VGS=-10V

-

1.0

2SJ502

f=1MHz

Ciss

Coss

Crss

-

–A

F

-

-

0.01

Forward Current, I

-

0.001

V

–

GS

Gate-to-Source Voltage, V

-

30 1.5 3.0 4.00.5 2.01.0 2.5 3.50

-

–A

D

,I

-

-

0.01

Drain Current

-

0.001

75°C

IF-

25°C

25°C

-

Ta=

1.0

0.1

3
2

7
5

3
2

7
5

3
2

7
5

3
2

VGS=0

-

0.2-0.4-0.6

0

Diode Forward Voltage, VSD–V

V

-

10

VDS=-10V

-

9

ID=-0.5A

-

8

-

7

-

6

-

5

-

4

-

3

-

2

-

1
0

5
3

IDP=-2A

2

1.0
7
5

3
2

0.1
7
5

Operation in this area

3
2

is limited by RDS(on).

7
5

3

Ta=25°C

2

Single pulse

23 57 23 57 23 5 23 57

-

0.01

GS

A S O

-

0.1

Drain-to-Source Voltage, VDS–V

V

SD

-

0.8

-

Qg

ID=-0.5A

DC operation

-

1.0

-

1.0

-

1.4

-

1.2

<100µs

1ms

10m

s

-

10

0.25

–W

D

0.20

0.15

0.10

0.05

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C

No.6178–3/4

2SJ502

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.

PS No.6178–4/4