Datasheet 2SJ494 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

2SJ494

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super Low On-State Resistance

DS(on)1

R

= 50 m: Max. (VGS = –10 V, ID = –10 A)

DS(on)2

R

= 88 m: Max. (VGS = –4 V, ID = –10 A)

• Low C

issCiss

= 2360 pF Typ.

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage* V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)** I
Total Power Dissipation (TC = 25 °C) P
Total Power Dissipation (TA = 25 °C) P
Channel Temperature T
Storage Temperature T

* f = 20 kHz, Duty Cycle d 10% (+Side)
** PW d 10 Ps, Duty Cycle d 1%

DSS
GSS (AC)

GSS (DC)
D (DC)
D (pulse)

T

T

ch

stg

THERMAL RESISTANCE

Channel to Case R
Channel to Ambient R

th (ch-C)
th (ch-A)

3.57 °C/W

62.5 °C/W

–60 V
–

+20 V

–20, 0 V

–

+20 A
–

+80 A

35 W

2.0 W

150 °C

–55 to +150 °C

PACKAGE DIMENSIONS

(in millimeter)

10.0±0.3

15.0±0.3

2.54

123

3.2±0.2

3±0.1

4±0.2

13.5 MIN. 12.0±0.2

1.3±0.20.7±0.1

1.5±0.2

2.54

ISOLATED TO-220 (MP-45F)

Gate

Gate Protection
Diode

4.5±0.2

2.7±0.2

2.5±0.1

0.65±0.1

1. Gate

2. Drain

3. Source

Drain

Body
Diode

Source

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.

Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan

1998©

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ494

R

DSS

GSS

d(on)

r

d(off)

f

rr

DS(on)1

DS(on)2

GS (off)

iss

oss

rss

G

GS

GD

F(S-D)

rr

VGS = –10 V, ID = –10 A 39 50 m:
VGS = –4 V, ID = –10 A 61 88 m:
VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V

DS

= –10 V, ID = –10 A 8.0 15 S
VDS = –60 V, VGS = 0 –10
VGS = +20 V, VDS = 0 +10
VDS = –10 V

GS

V

= 0
f = 1 MHz

D

= –10 A

I

GS(on)

V

= –10 V

DD

V

= –30 V

G

R

= 10 :

D

= –20 A

I

DD

V

= –48 V

GS

V

= –10 V

IF = 20 A, VGS = 0 1.0 1.5 V

F

= 20 A, VGS = 0

I
di/dt = 100 A/

Drain to Source On-state Resistance R

Gate to Source Cutoff Voltage V
Forward Transfer Admittance | yfs |V
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

P

A

P

A
2360 pF
1060 pF

350 pF

25 ns
160 ns
310 ns
240 ns

74 nC

12 nC

16 nC

130 ns

P

s

290 nC

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

PG.

VGS
0

t

µ

t = 1 s
Duty Cycle ≤ 1 %

RG

G = 10 Ω

R

D.U.T.

R

VDD

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

VGS (on)

ID

90 %

PG.

90 %

10 %

L

G

= 2 mA

I

50 Ω

D.U.T.

R

L

V

DD

2

2SJ494

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C

- Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

–1000

–100

RDS(on) Limited

(at VGS =10 V)

–10

- Drain Current - A

D

I

Tc = 25 ˚C
Single Pulse

–1

–0.1

DS

- Drain to Source Voltage - V

V

ID(pulse)

ID(DC)

Power Dissipation Limited

–1 –10 –100

500 s

µ

10 ms

100 ms

1 ms

DC

300 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

35

30

25

20

15

10

- Total Power Dissipation - W

5

T

P

0

20

40 60 80 100 120 140 160

C

- Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–100

–80

VGS= –10 V

–60

–40

- Drain Current - A

D

I

–20

0

–4

DS

- Drain to Source Voltage - V

V

–8

V

GS

= –4 V

–12

Pulsed

–16

FORWARD TRANSFER CHARACTERISTICS

–1 000

T

ch

= –25 ˚C

–100

125 ˚C

–10

- Drain Current - A

D

I

–1

0

–5

GS

- Gate to Source Voltage - V

V

–10

25 ˚C

V

DS

Pulsed

= –10 V

–15

3

1 000

100

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

µµ

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

1 m 10 m 100 m 1 10 100 1 000 10

PW - Pulse Width - s

Single Pulse

R

R

th(ch-a)

th(ch-c)

2SJ494

= 62.5 ˚C/W

= 3.57 ˚C/W

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

Tch = –25 ˚C

10

25 ˚C
75 ˚C

125 ˚C

1

| - Forward Transfer Admittance - S

fs

0.1

| y

–0.1

–1.0

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

150

100

V

DS

= –10 V

Pulsed

–10 –100

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

150

Pulsed

100

ID = –20 A

50

- Drain to Source On-State Resistance - mΩ

0–5

DS(on)

R

GS

- Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

–2.0

–10 –20

VDS = –10 V
I

D

= –1 mA

–1.5

V

GS

= –4 V

V

GS

= –10 V

–1.0

50

–0.5

- Drain to Source On-State Resistance - mΩ

DS(on)

R

0

–1

–10 –100

ID - Drain Current - A

- Gate to Source Cutoff Voltage - V

0

GS(off)

V

–50

0 50 100 150

ch

- Channel Temperature - ˚C

T

4

2SJ494

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

160

120

- Drain to Source On-State Resistance - mΩ

DS(on)

R

80

40

0

–50

V

GS

= –4 V

V

GS

= –10 V

0

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

50

100 150

10 000

1 000

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

10

–0.1

–1 –10 –100

V

DS

- Drain to Source Voltage - V

D

= –10 A

I

VGS = 0
f = 1 MHz

C

iss

C

C

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

Pulsed

–100

V

GS

= –4 V

–10

V

GS

= 0

–1

- Diode Forward Current - A

–0.1

SD

I

0

–1.0

V

SD

- Source to Drain Voltage - V

–2.0

–3.0

SWITCHING CHARACTERISTICS

1 000

t

d(off)

t

f

100

oss

t

rss

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1
–0.1

r

t

d(on)

–1 –10 –100

I

D

- Drain Current - A

DD

V
V

GS

R

G

= 10 Ω

= –30 V
= –10 V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

–0.1

–1 –10 –100

I

F

- Diode Current - A

di/dt = 50 A/ s

GS

V

= 0

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

–80

I

D

–60

V

DD

= –48 V

–40

–24 V
–12 V

–20

- Drain to Source Voltage - V

DS

V

0

V

DS

20 40 60 80

Q

G

- Gate Charge - nC

= –20 A

V

GS

–14
–12

–10

–8
–6
–4

- Gate to Source Voltage - V

–2

GS

V

0

5

Document Name Document No.
NEC semiconductor device reliability/quality control system C11745E
Power MOS FET features and application to switching power supply D12971E
Application circuits using Power MOS FET TEA-1035
Safe operating area of Power MOS FET TEA-1037
Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) C11892E

2SJ494

6

[MEMO]

2SJ494

7

2SJ494

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document.
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device before using it in a particular application.

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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.

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