Datasheet 2SJ492-ZJ, 2SJ492-S, 2SJ492 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SJ492

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor
designed for DC/DC converters and motor/lamp driver
circuits.

FEATURES

• Low on-state resistance

DS(on)1

R

= 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A)

DS(on)2

R

= 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A)

iss

• Low C

iss

: C

= 1210 pF (TYP.)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

GSS(AC)

GSS(DC)

V

D(DC)

D(pulse)

I

I

E

DSS

T

T

ch

stg

AS

AS

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
Gate to Source Voltage (VDS = 0 V)

DS

= 0 V) V

Note1

Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note2

A

= 25°C) P

C

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note3

Note3

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ492 TO-220AB

2SJ492-S TO-262

2SJ492-ZJ TO-263

–60 V

# 20

–20, 0 V

# 20
# 80

1.5 W
70 W

150 °C

–55 to +150 °C

–20 A

40 mJ

V

A
A

Notes 1.

2.

3.

kHz, Duty Cycle ≤ 10% (+Side)

f = 20
PW ≤ 10 µs, Duty Cycle ≤ 1 %
Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V → 0

THERMAL RESISTANCE

Channel to Case R
Channel to Ambient R

The information in this document is subject to change without notice.

Document No. D11264EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan

th(ch-C)

th(ch-A)

1.79 °C/W

83.3 °C/W

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ492

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= –10 V, ID = –10 A 70 100 m
= –4 V, ID = –10 A 120 185 m

= –10 V, ID = –1 mA –1.0 –1.5 –2.0 V
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –10 A 5.0 12 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

VDS = –60 V, VGS = 0 V –10
VGS = #20 V, VDS = 0 V

GSS

iss

VDS = –10 V 1210 pF

oss

VGS = 0 V 520 pF

rss

f = 1 MHz 180 pF

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= –10 A16ns

r

GS(on)

V

= –10 V 140 ns

VDD = –30 V90ns

f

G

RG = 10

Ω

80 ns
ID = –20 A42nC
VDD = –48 V8.0nC
VGS = –10 V10nC

= –20 A, VGS = 0 V1.0V

IF = –20 A, VGS = 0 V 125 ns

rr

di/dt = 50 A /

s 280 nC

µ

10

#

Ω
Ω

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG

RG = 25 Ω

50 Ω

VGS = –20 → 0 V

DSS

BV

I

AS

V

I

D

DD

V

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

τ

µ

R

RG = 10 Ω

V

DD

PG.

GS

V

0

τ = 1 s
Duty Cycle ≤ 1 %

V

GS

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

D

I

10 %

0

t

r

t

d(on)

t

on

V

GS(on)

I

D

t

d(off)

t

off

90 %

90 %

10 %

t

f

2

Data Sheet D11264EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SJ492

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

−1000

−100

Limited

=10 V)

I

D(DC)

GS

DS(on)

R

(at V

−10

- Drain Current - A

D

I

TC = 25

˚C

Single Pulse

−1

−0.1

V

DS

- Drain to Source Voltage - V

Power Dissipation Limited

−1 −10 −100

I

1 ms

10 ms

DC

D(pulse)

100 µs

P

w

= 10 µs

100ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

35

30

25

20

15

10

- Total Power Dissipation - W

T

5

P

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

−100

−80

−60

−40

- Drain Current - A

D

I

−20

0

−4

V

DS

- Drain to Source Voltage - V

−8

Pulsed

VGS = −10 V

−4 V

−12

−16

FORWARD TRANSFER CHARACTERISTICS

−1000
Tch = −25˚C

25˚C

−100

125˚C

−10

- Drain Current - A

D

I

−1

0 −5 −10

V

GS

- Gate to Source Voltage - V

Pulsed

VDS = −10 V

−15

−20

Data Sheet D11264EJ1V0DS00

3

1000

2SJ492

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001
100

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

Tch = −25˚C

25˚C

10

75˚C

125˚C

1

m10

1

VDS = −10 V
Pulsed

m 100 m 1 10 100 1000 10

PW - Pulse Width - s

0.3

0.2

0.1

th(ch-a)

= 83.3 ˚C/W

R

R

th(ch-c)

= 1.79 ˚C/W

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

ID = −10 A

| - Forward Transfer Admittance - S

fs

y

|

0.1

−0.1

−1.0

I

D

- Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

0.15

VGS = −4 V

0.10

0.05

VGS = −10 V

- Drain to Source On-State Resistance - Ω

DS(on)

0

R

−1
I

D

- Drain Current - A

−10 −100

−10 −100

Pulsed

- Drain to Source On-State Resistance - Ω

0 −5

DS(on)

R

V

GS

- Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

−2.0

−1.5

−1.0

−0.5

- Gate to Source Cutoff Voltage - V

GS(off)

0

V

−50

0 50 100 150

T

ch

- Channel Temperature - ˚C

−10 −15

VDS = −10 V
I

D

= −1 mA

4

Data Sheet D11264EJ1V0DS00

2SJ492

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

0.24
VGS = −4 V

0.18

0.12

0.06

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

−50

0

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

50

100 150

10000

1000

100

Ciss, Coss, Crss - Capacitance - pF

10

−0.1

−1 −10 −100

V

DS

- Drain to Source Voltage - V

−10 V

D

= −10 A

I

VGS = 0
f = 1 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

Pulsed

−100

V

GS

= −4 V

−10

VGS = 0 V

−1

- Diode Forward Current - A

SD

−0.1

I

0

1

V

SD

- Source to Drain Voltage - V

2 3

SWITCHING CHARACTERISTICS

1000

t

C

iss

C

oss

- Switching Time - ns

C

rss

f

, t

d(off)

, t

r

, t

d(on)

t

100

10

1.0

−0.1

t

d(off)

t

t

d(on)

f

r

VDD = −30 V
V

GS

= −10 V

R

G

= 10 Ω

−1 −10 −100

I

D

- Drain Current - A

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

−0.1

−1 −10 −100

I

F

- Diode Current - A

di/dt = 50 A /

GS

= 0

V

s

µ

−80

−60

−40

−20

- Drain to Source Voltage - V

DS

V

Data Sheet D11264EJ1V0DS00

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V

VDD = −48 V

0

GS

−24 V

−12 V

V

DS

20 40 60 80

Q

G

- Gate Charge - nC

ID = −16 A

−14

−12

−10

−8

−6

−4

- Gate to Source Voltage - V

GS

−2

V

0

5

2SJ492

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

–100

ID = –20 A

–10

–1.0

V

DD

10

V

GS

R

G

µ

= –30 V
= –20 V → 0

= 25 Ω

100

µ

- Single Avalanche Current - A

AS

I

–0.1

L - Inductive Load - H

E

AS

= 40

mJ

1

m10

m

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160

140

120

V

R
VGS = –20 V → 0
I

100

80

60
40

Energy Derating Factor - %

20

0

50 75 100 125 150

25

Starting Tch - Starting Channel Temperature - ˚C

DD

= –30 V

G

= 25 Ω

<

AS

=

–20 A

6

Data Sheet D11264EJ1V0DS00

PACKAGE DRAWING (Unit: mm)

2SJ492

1) TO-220AB (MP-25)

3.0±0.3

4

1.3±0.2

0.75±0.1

2.54 TYP.

10.6 MAX.

10.0

1

2 3

φ

3.6±0.2

5.9 MIN.6.0 MAX.

2.54 TYP.

15.5 MAX.12.7 MIN.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

3) TO-263 (JEDEC TYPE: MP-25ZJ)

4.8 MAX.

0.5±0.2

1.3±0.2

2.8±0.2

2) TO-262 (MP-25 Fin Cut)

(10)

4

1

2 3

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

(10)

4

1.0±0.5

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

Remark

123

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

8.5±0.2

(0.5R)

5.7±0.4

2.8±0.2

4.8 MAX.

1.3±0.2

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.2

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

Data Sheet D11264EJ1V0DS00

7

2SJ492

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96. 5