Datasheet 2SJ486 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.5 Ω typ. (at V

DS(on)

• 2.5V gate drive devices.

• Small package (MPAK).

Outline

2SJ486

Silicon P Channel MOS FET

Low FrequencyPower Switching

= –4V, ID = –100 mA)

GS

ADE-208-512 A

2nd. Edition

MPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SJ486

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I

DSS

GSS

D

D(pulse)

1

*
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain

I

DSS

current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

GS(off)

DS(on)

resistance

R

DS(on)

Forward transfer admittance |yfs| 0.4 0.65 — S ID = –100mA

Input capacitance Ciss — 45 — pF VDS = –10V
Output capacitance Coss — 76 — pF VGS = 0
Reverse transfer capacitance Crss — 5.4 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Notes: 1. Pulse test

2. Marking is “ZU–”.

–30 — — V ID = –10µA, VGS = 0

±10——V I

— — –1.0 µAV

——±5.0 µAV
–0.5 — –1.5 V ID = –10µA, VDS = –5V
— 0.5 0.65 Ω ID = –100mA

— 0.7 1.2 Ω ID = –40mA

— 120 — ns VGS = –4V
— 340 — ns ID = –150mA
— 850 — ns RL = 66.6Ω
— 550 — ns

–30 V
±10 V
–0.3 A
–0.6 A

= ±100µA, VDS = 0

G

DS

GS

V

GS

V

GS

V

DS

= –30 V, VGS = 0

= ±6.5V, VDS = 0

1

= –4V*

= –2.5V*

= –10V*

1

1

2

Main Characteristics

2SJ486

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–1.0

–10 V

–0.8

D

–0.6

–5 V

–4 V

–2.5 V

–2 V

Maximum Safe Operation Area

D

–0.03

–0.01

–1

–0.3

–0.1

Operation in
this area is
limited by R

DC Operation

DS(on)

1 ms

PW = 10 ms

(1 shot)

Drain Current I (A)

–0.003

–0.001

Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–1.0

V = –10 V

DS

Pulse Test

–0.8

D

–0.6

Tc = 75 °C

DS

–0.4

Drain Current I (A)

–0.2

0

–0.2 –0.4 –0.6 –0.8 –1.0

Drain to Source Voltage V (V)

Ta = 25°C
Pulse Test

V = –1.5 V

GS

DS

–0.4

–0.2

Drain Current I (A)

25 °C

–25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ486

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

–0.4

DS(on)

V (V)

–0.3

–0.2

–0.1

Drain to Source Saturation Voltage

0

–2 –4 –6 –8 –10

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

2.0

Ω

Pulse Test

1.4

DS(on)

R ( )

1.2

V = –2.5 V

0.8

0.4

GS

–4 V

Ta = 25°C
Pulse Test

–0.2 A

–0.1 A

GS

–0.1, –0.2 A

–0.1, –0.2 A

Static Drain to Source on State Resistance

10

vs. Drain Current

Ta = 25°C

5

DS(on)

2

R ( )Ω

1

0.5

V = –2.5 V

GS

–4 V

Pulse Test

0.2

Drain to Source On State Resistance

0.1

–0.01 –0.03 –0.1 –0.3 –1 –3 –10

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

5

V = –10 V

fs

DS

Pulse Test

2

1

0.5

Ta = –25 °C

25 °C

75 °C

0.2

0.1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

Forward Transfer Admittance |y | (S)

0.05
–0.01 –0.1 –1

–0.02 –0.05 –0.2 –0.5

Drain Current I (A)

D

Typical Capacitance vs.
Drain to Source Voltage

1000

300

100

Coss

30

10

Capacitance C (pF)

3

1

0 –4 –8 –12 –16 –20

Drain to Source Voltage V (V)

V = 0

GS

f = 1 MHz

Ciss

Crss

DS

10000

Switching Characteristics

3000

t

1000

300

d(off)

t

f

t

r

t

d(on)

100

Switching Time t (ns)

30

10

V = –4 V, V = –10 V

GS

DD

PW = 5 µs, duty < 1 %

–0.05 –0.1 –0.2 –0.5 –1

Drain Current I (A)

D

2SJ486

Reverse Drain Current vs.

Source to Drain Voltage

–1.0

–0.8

DR

–0.6

V = 0, 5 V

GS

–5 V

–0.4

–0.2

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Pulse Test

SD

5

2SJ486

Switching Time Test Circuit Waveform

R

L

V

DD

= –10 V

Vout
Monitor

Vin

10%

90%

Vin Monitor

Vin
–10 V

D.U.T.

50Ω

90%

90%

Vout

td(on)

10%

10%

tr

td(off)

t

f

6

Package Dimensions

0.4

0.95

0.95

1.9

+ 0.3

2.8

– 0.1

+ 0.10
– 0.05

+ 0.1

0.65

+ 0.1

0.65

0.3

– 0.3

1.5

– 0.3

+ 0.2

2.8

+ 0.2

1.1

– 0.6

– 0.1

0.16

0 ~ 0.1

+ 0.10
– 0.06

Hitachi Code

EIAJ

JEDEC

2SJ486

Unit: mm

MPAK

SC–59A

TO–236Mod

7

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