Datasheet 2SJ483 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.08Ω typ (at VGS = –10 V, ID = –2.5 A)

DS(on)

• 4V gate drive devices.

• Large current capacitance

ID = –5 A

Outline

2SJ483

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-519

1st. Edition

TO-92MOD.

G

D

3

2

1

S

1. Source

2. Drain

3. Gate

2SJ483

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

Note1

Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

–30 V
±20 V
–5 A
–20 A
–5 A

2

2SJ483

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

DSS

GSS

GS(off)

DS(on)

resistance

R

DS(on)

Forward transfer admittance |yfs| 35—SI

Input capacitance Ciss — 630 — pF VDS = –10V
Output capacitance Coss — 390 — pF VGS = 0
Reverse transfer capacitance Crss — 135 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

–30 — — V ID = –10mA, VGS = 0

±20——V I

= ±100µA, VDS = 0

G

— — –10 µAVDS = –30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.08 0.11 Ω ID = –2.5A

V

= –10V*

GS

— 0.12 0.17 Ω ID = –2.5A

V

= –4V*

GS

= –2.5A,

D

V

= –10V*

DS

1

1

1

— 15 — ns VGS = –10V, ID = –2.5A
— 70 — ns RL = 4Ω
—65—ns
—60—ns
— –1.0 — V ID = –5A, VGS = 0

— 60 — ns IF = –5A, VGS = 0

diF/ dt = 20A/µs

3

2SJ483

Main Characteristics

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–10 V

–6 V

–10

–5 V

–8

D

–4 V

–3.5 V

–6

–3 V

–100

–30
–10

D

Maximum Safe Operation Area

10 µs

–3

DC Operation

–1

–0.3

Operation in

Drain Current I (A)

–0.1

this area is
limited by R

DS(on)

–0.03
–0.01

Ta = 25 °C

–0.01–0.03 –0.1 –0.3 –1 –3 –10

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–10

V = –10 V

DS

Pulse Test

–8

D

–6

100 µs

1 ms

PW = 10 ms

(1 shot)

–30 –100

DS

–4

Drain Current I (A)

–2

0

Drain to Source Voltage V (V)

4

V = –2.5 V

GS

Ta = 25°C
Pulse Test

–2 –4 –6 –8 –10

DS

–4

Tc = 75 °C

Drain Current I (A)

–2

25 °C

–25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

2SJ483

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.0

Ta = 25°C
Pulset Test

–0.8

DS(on)

V (V)

–0.6

I = –5 A

–0.4

D

–0.2

Drain to Source Saturation Voltage

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.5
Pulse Test

Ω

0.4

DS(on)

R ( )

0.3

I = –5 A

D

0.2

V = –4 V

GS

0.1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

–10 V

–1, 2, 5 A

Case Temperature Tc (°C)

–2 A
–1 A

GS

–1, 2 A

Static Drain to Source on State Resistance

vs. Drain Current

10

Ta = 25°C
Pulset Test

3

1

DS(on)

R ( )Ω

0.3
V = –4 V

GS

0.1

–10 V

0.03

Drain to Source on State Resistance

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

V = –10 V

DS

Pulse Test

fs

20

10

Ta = –25 °C

5

2

75 °C

1

Forward Transfer Admittance |y | (S)

0.5

–0.1 –1 –10

–0.2 –0.5 –2 –5

Drain Current I (A)

D

25 °C

5

2SJ483

Body to Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

–0.1 –0.2 –1 –5 –10

Reverse Drain Current I (A)

di / dt = 20 A / µs
V = 0, Ta = 25 °C

GS

–0.5 –2

DR

Typical Capacitance vs.
Drain to Source Voltage

5000

2000
1000

500

200

Capacitance C (pF)

100

50

0 –4 –8 –12 –16 –20

Drain to Source Voltage V (V)

V = 0

GS

f = 1 MHz

Ciss

Crss

Coss

DS

Dynamic Input Characteristics

0

–10

DS

V = –5V

DD

–10 V
–25 V

I = –5 A

–20

V

V

DS

–30

V = –25 V

DD

–40

Drain to Source Voltage V (V)

0

–10 V

–5 V

81624

GS

Gate Charge Qg (nc)

D

32

0

500

V = –10 V, V = –10 V

GS

duty < 1 %

Switching Characteristics

GS

200

–4

100

–8

50

t

f

–12

20

–16

Switching Time t (ns)

10

Gate to Source Voltage V (V)

–20–50

40

5
–0.1 –0.2 –0.5 –1 –2 –5

Drain Current I (A)

t

d(off)

DD

t

r

t

d(on)

–10

D

6

–10

–8

DR

–6

Reverse Drain Current vs.

Source to Drain Voltage

–10 V

V = 0, 5 V

GS

2SJ483

–4

–5 V

–2

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Switching Time Test Circuit Switching Time Waveforms

Vin Monitor

Vin
–10 V

D.U.T.

50Ω

Vout
Monitor

R

L

V

DD

= –10 V

Vin

10%

90%

90%

90%

Vout

td(on)

10%

10%

tr

td(off)

t

f

7

2SJ483

Package Dimensions

Unit: mm

0.70 max

0.75 max

0.60 max

0.55 max

5.2 max

0.7

8.5 max

2.3 max

10.1 min

4.2 max

0.5 max

TO–92Mod.

SC–51

—

2.54

1.27

Hitachi Code

EIAJ

JEDEC

8

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