Datasheet 2SJ479-S, 2SJ479-L Datasheet (HIT)

2SJ479(L), 2SJ479(S)

Silicon P Channel DV–L MOS FET

High Speed Power Switching

ADE-208-541

1st. Edition

Features

• Low on-resistance

R

DS(on)

= 25 mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SJ479(L), 2SJ479(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–30 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–30 A

Drain peak current I

D(pulse)

Note1

–120 A

Body to drain diode reverse drain current I

DR

–30 A

Channel dissipation Pch

Note2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

2SJ479(L), 2SJ479(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown
voltage

V

(BR)DSS

–30 — — V ID = –10mA, VGS = 0

Gate to source breakdown
voltage

V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain
current

I

DSS

— — –10 µAV

DS

= –30 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state R

DS(on)

—2535mΩI

D

= –15A, VGS = –10V

Note3

resistance R

DS(on)

—4060mΩI

D

= –15A, VGS = –4V

Note3

Forward transfer admittance |yfs| 1220—S I

D

= –15A, VDS = –10V

Note3

Input capacitance Ciss — 1700 — pF VDS = –10V
Output capacitance Coss — 950 — pF VGS = 0
Reverse transfer capacitance Crss — 260 — pF f = 1MHz
Turn-on delay time t

d(on)

— 20 — ns VGS = –10V, ID = –15A

Rise time t

r

— 290 — ns RL = 0.67Ω

Turn-off delay time t

d(off)

— 170 — ns

Fall time t

f

— 130 — ns

Body to drain diode forward
voltage

V

DF

— –1.1 — V IF = –30A, VGS = 0

Body to drain diode reverse
recovery time

t

rr

— 70 — ns IF = –30A, VGS = 0

diF/ dt = 50A/µs

Note: 3. Pulse test

See characteristic curves of 2SJ471

2SJ479(L), 2SJ479(S)

4

Main Characteristics

100

75

50

25

0

50 100 150 200

–500

–200
–100

–20

–50

–10

–2

–5

–1

–0.5

–0.1 –0.3 –1

–3

–10

–30

–100

1 ms

Ta = 25 °C

100 µs

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximun Safe Operation Area

Operation in
this area is
limited by R

DS(on)

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C

θ γ θ
θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermao Impedance

s (t)

γ

2SJ479(L), 2SJ479(S)

5

Vin Monitor

D.U.T.

Vin
10 V

R

L

V
= –10 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50Ω

90%

10%

t

f

Switching Timen Test Circuit Waveform

2SJ479(L), 2SJ479(S)

6

Package Dimensions

Unit: mm

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

1.2 ± 0.2

2.54 ± 0.5

11.3 ± 0.5

(1.5)

0.86

+0.2
–0.1

3.0

+0.3

–0.5

0.76 ± 0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

2.54 ± 0.5

(1.5)

0.86

+0.2
–0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

1.2 ± 0.2

(1.5)

0.1

+0.2
–0.1

L type S type

Hitachi Code

EIAJ

JEDEC

LDPAK

—
—

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