Datasheet 2SJ466 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5491B

2SJ466

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

· Enables simplified fabrication, high-density mount­ing, and miniaturization in end products due to the
surface mountable package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

SSD
SSG

D

PD

D

Package Dimensions

unit:mm

2128

PW≤10µs, duty cycle≤1%
Tc=25˚C

[2SJ466]

8.2

7.8

0.4

4.2

2.5

6.2

0.2

3

8.4

1.2

2

1.0

2.54

6.2

1.0

2.54

1

5.08

10.0

6.0

10.0

0.6

0.7

0.3

0.6

7.8

5.2

1 : Gate
2 : Source
3 : Drain
SANYO : ZP

03–V
02±V
53–A
041–A
05W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV

egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

I

D

)no(

I

D

V,Am1–=

0=03–V

SG

V,Aµ001±=

0=02±V

SD

V,V03–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–0.2–V

D

A81–=6172S

D

V,A81–=
V,A81–=

V01–=0203mΩ

SG

V4–=0304mΩ

SG

31000TS (KOTO) TA-2368 No.5491–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

2SJ466

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

VDD=--30V

V

0V

--10V

PW=10µs
D.C.≤1%

P.G

in

V

in

G

50Ω

ID=--18A

RL=1.67Ω

D

2SJ466

S

V

OUT

zHM1=f,V01–=0004Fp
zHM1=f,V01–=0042Fp
zHM1=f,V01–=088Fp

tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS005sn
tiucriCtseTdeificepseeS072sn

V,A53–=

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

tinU

--70

--60

--50

–A

D

--40

--30

--20

Drain Current, I

--10

100

fs|–S

y

10

Forward Transfer Admittance, |

1.0

--4.5V

=--5.0V

GS

V

0

0

--2 --4

Drain-to-Source Voltage, VDS–V



7
5

3
2

7
5

3
2

57 3337725

--1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

I

-- V

D

y

fs -- I

DS

--4.0V

--3.5V

--3.0V

--2.5V

--6 --8 --10

IT00681

D

VDS=--10V

°C

Tc=--25

75°C

--10

25°C

25

IT00683

--100

I

-- V

--70

--60

--50

–A

D

--40

--30

--20

Drain Current, I

--10

0

0 --1 --2 --3 --4 --5 --6

60

50

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0

Gate-to-Source Voltage, VGS–V

--2

D

RDS(on) -- V

--4 --6

GS

--8

Tc=--25

GS

C

°

°C

75

--10 --12

VDS=--10V

25°C

IT00682

Tc=25°C
ID=--18A

--14

IT00684

No.5491–2/4

2SJ466

60

50

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

Switching Time, SW Time – ns

1000

100

0

--80

2

7
5

3
2

7
5

3
2

10

60

--40 0 40

3557

--1.0

RDS(on) -- Tc

=- -4V

GS

=- -18A, V

I

D

=- -18A, V

I

D

Case Temperature, Tc – ˚C

SW Time -- I

td(off)

td(on)

25

3

Drain Current, ID–A

P

D

tf

tr

-- Tc

GS

7

=- -10V

80

D

--10

120 160

IT00685

VDD=--30V
VGS=--10V

3

2

IT00687

2

10000

7
5

3
2

1000

7
5

3

Ciss, Coss, Crss – pF

2

100

7
5

0

3
2

IDP=--140A

--100
7
5

ID=--35A

–A

3

D

,I

2

Operation in

--10

this area is

7
5

Drain Current

limited by RDS(on).

3
2

Tc=25°C

--1.0

Single pulse

7

3

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

--10 --15 --20

--5

Drain-to-Source Voltage, VDS–V

A S O

10ms

DC operation

5

7

--1.0

Drain-to-Source Voltage, VDS–V

3

72

5

1ms

--10

100

DS

µ

s

2

f=1MHz

IT00686

10µs

3

IT00688

--30--25

5

50

–W

D

40

30

20

10

Allowable Power Dissipation, P

0

2006040

Case Temperature, Tc – ˚C

80

100 140120

160

IT00689

No.5491–3/4

2SJ466

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.5491–4/4