Datasheet 2SJ463A Datasheet (NEC)

DATA SHEET

2.0 ±0.2

0.65 0.65

2.1 ±0.1

0.15

+0.1

–0.05

0.3

0.9 ±0.1

0.3

+0.1

–0

0.3

+0.1

–0

2

1

3

1.25 ±0.1

Marking

0 to 1.1

MOS FIELD EFFECT TRANSISTOR

2SJ463A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ463A is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ463A has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5 V power source.

• Low Gate Cut-off Voltage.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS –30 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) +0.1 A
Drain Current (pulse) ID(pulse) +0.4
Total Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C

µ

Note PW ≤ 10

s, Duty Cycle ≤ 1 %

GSS +20 V

Note

T 150 mW

A

Package Drawings (unit: mm)

Equivalent Circuit

Drain

Gate

Electrode
Connection

1. Source

2. Gate

3. Drain

Internal Diode

Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.

Gate Protect
Diode

Source

Marking : H21

©

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain Cut-off Current IDSS –1
Gate Leakage Current IGSS +10
Gate Cut-off Voltage VGS(off) –1.0 –1.4 –1.7 V VDS = –3 V, ID = –10 µA
Forward Transfer Admittance | y fs |20 mSVDS = –3 V, ID = –10 mA
Drain to Source On-State RDS(on)1 23 60 Ω VGS = –2.5 V, ID = –1 mA

Resistance
Drain to Source On-State RDS(on)2 11 23 Ω VGS = –4 V, ID = –10 mA

Resistance
Drain to Source On-State RDS(on)3 613ΩVGS = –10 V, ID = –10 mA

Resistance
Input Capacitance Ciss 5pFVDS = –3 V
Output Capacitance Coss 15 pF VGS = 0
Reverse Transfer Capacitance Crss 1.3 pF f = 1 MHz
Turn-on Delay Time td(on) 140 ns VDD = –3 V, ID = –10 mA
Rise Time tr 330 ns VGS(on) = –4 V, RG = 10 Ω
Turn-off Delay Time td(off) 220 ns RL = 300 Ω
Fall Time tf 320 ns

µ

AVDS = –30 V, VGS = 0

µ

AVGS = +20 V, VDS = 0

2SJ463A

2

2SJ463A

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0 30 60 90 120 150

T

A

- Ambient Temperature - °C

TRANSFER CHARACTERISTICS

–100

V

DS

= –3 V

–10

TA = 125 °C

–1

TA = 75 °C

TA = 25 °C

–0.1

- Drain Current - mA

D

I

–0.01

TA = –25 °C

–0.001

0 –0.8 –1.6 –2.4 –3.2 –4.0

V

GS

- Gate to Source Voltage - V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–100

–80

–60

–40

- Drain Current - mA

D

I

–20

0

0 –1 –2 –3 –4 –5

V

GS

= –10 V

V

GS

= –6 V

V

GS

= –4 V

V

DS

- Drain to Source Voltage - V

V

V

GS

GS

= –3 V

= –2.5 V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

V

DS

= –3 V

100

TA = –25 °C

TA = 25 °C

10

TA = 75 °C

TA = 125 °C

I - Forward Transfer Admittance - mS

fs

Iy

1

–0.1 –1 –10 –100 –1000

D

- Drain Current - mA

I

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

V

GS

= –2.5 V

50

40

TA = 125 °C

TA = 75 °C

30

20

TA = 25 °C

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

–0.1 –1 –10 –100 –1000

R

TA = –25 °C

ID - Drain Current - mA

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

V

GS

= –4 V

50

40

30

TA = 125 °C

20

TA = 75 °C

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

–0.1 –1 –10 –100 –1000

R

I

D

- Drain Current - mA

TA = 25 °C
TA = –25 °C

3

2SJ463A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

GS

=

–10 V

V

50

40

30

T

A

=

T

A

=

20

25 °C

T

A

=

–25 °C

75 °C

T

A

=

125 °C

10

- Drain to Source On-Stage Resistance - Ω

0

DS(on)

–0.1 –1 –10 –100 –1000

R

I

D

- Drain Current - mA

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

100

V

GS

= 0

f = 1 MHz

C

oss

10

- Capacitance - pF

rss

,C

oss

,C

iss

C

C

iss

C

rss

1

–1 –10 –100

V

DS

- Drain to Source Voltage - V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

60

50

I

D

=

40

30

I

D

I

D

–1 mA

=

–10 mA

=

–100 mA

20

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

0 –2 –4 –6 –8 –10

V

GS

- Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

1000

t

r

t

f

t

d(on)

100

- Switching Time - ns

f

,t

d(off)

,t

r

,t

V

DD

d(on)

t

= –3 V

GS(on)

= –

in

= 10 Ω

4 V

V
R

10

–10 –100 –1000

t

d(off)

ID - Drain Current - mA

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

–1000

–100

–10

–1

- Reverse Drain Current - mA

D

I

–0.1

–0.2 –0.4 –0.6 –0.8 –1.0 –1.2

SD

- Source to Drain Voltage - V

V

4

2SJ463A

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices C11531E
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

[MEMO]

2SJ463A

6

[MEMO]

2SJ463A

7

2SJ463A

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this document.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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customer designated "quality assurance program" for a specific application. The recommended applications of
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before using it in a particular application.

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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5