Datasheet 2SJ462 Datasheet (NEC)

DATA SHEET

5.7 ±0.1

2.0 ±0.2

213

1.5 ±0.1

0.4 ±0.05

4.2

0.85 ±0.1

2.1

0.5 ±0.1

1.0

0.55

0.5 ±0.1

3.65 ±0.1

5.4 ±0.25

MOS FIELD EFFECT TRANSISTOR

2SJ462

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ462 is a switching device which can be driven directly

by an IC operating at 3 V.

The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica­tions such as power management.

FEATURES

• Can be driven by a 2.5 V power source.

• New-type compact package.

Has advantages of packages for small signals and for power

transistors, and compensates those disadvantages.

• Low on-state resistance.

DS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A

R

RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A

ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)

Drain to Source Voltage VDSS –12 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±2.5 A
Drain Current (pulse) ID(pulse) ±5.0* A
Total Power Dissipation P
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

* PW ≤ 10 ms, Duty Cycle ≤ 1 %

** Mounted on ceramic board of 7.5 cm

GSS ±8.0 V

T 2.0** W

2

× 0.7 mm

Package Drawings (unit : mm)

Equivalent Circuit

Electrode
Connection

1. Source

2. Drain

3. Gate

Internal Diode

Gate

Gate Protect
Diode

Drain

Source

Marking : UA3

Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan

©

1996

ELECTRICAL SPECIFICATIONS (TA = +25 ˚C)

Parameter Symbol MIN. TYP. MAX. Unit Conditions
Drain Cut-off Current IDSS –10
Gate Leakage Current IGSS ±10
Gate Cut-off Voltage VGS(off) –0.7 –1.0 –1.3 V VDS = –3.0 V, ID = –1.0 mA
Forward Transfer Admittance |yfs| 1.5 S VDS = –3.0 V, ID = –1.0 A
Drain to Source On-State RDS(on)1 195 290 mΩ VGS = –2.5 V, ID = –0.5 A

Resistance
Drain to Source On-State RDS(on)2 135 190 mΩ VGS = –4.0, ID = –1.0 A

Resistance
Input Capacitance Ciss 940 pF VDS = –3.0 V, VGS = 0
Output Capacitance Coss 835 pF f = 1.0 MHz
Reverse Transfer Capacitance Crss 495 pF
Turn-On Delay Time td(on) 45 ns VDD = –3.0 V, ID = –1.0 A
Rise Time tr 225 ns
Turn-Off Delay Time td(off) 140 ns
Fall Time tf 195 ns
Total Gate Charge QG 12 nC VDS = –8 V, ID = –2.5 A
Gate to Source Charge QGS 2nC
Gate to Drain Charge QGD 7nC
Diode Forward Voltage VF(S–D) –0.86 V IF = –2.5 A, VGS = 0
Reverse Recovery Time trr 150 ns IF = –2.5 A, VGS = 0
Reverse Recovery Charge Qrr 160 nC

µ

AVDS = –12 V, VGS = 0

µ

AVGS = ±8.0 V, VDS = 0

VGS(on) = –3.0 V, RG = 10 Ω
RL = 3.0 Ω

VGS = –3.0 V, IG = –2 mA

di/dt = 50 A/µs

2SJ462

2

2SJ462

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0 30 60 90 120 150

A - Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–5

–4

–5 V

–4 V

–3 V

FORWARD BIAS SAFE OPERATING AREA

–10

1 ms

10 ms

PW = 100 ms

–1

DC

ID - Drain Current - A

Single Pulse

–0.1

–1 –10 –100

DS - Drain to Source Voltage - V

V

TRANSFER CHARACTERISTICS

–10

VDS = –3 V

–1

–3

–2

ID - Drain Current - A

–1

–2 V

VGS = –1 V

0

0 –2 –4 –6 –8 –10

V

DS - Draint to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

VDS = –3 V

1

TA = –25 ˚C

25 ˚C

0.1

75 ˚C

125 ˚C

–0.1

TA = 125 ˚C

TA = 75 ˚C

TA = 25 ˚C

–0.01

TA = –25 ˚C

ID - Drain Current - A

–0.001

–0.0001

0 –0.5 –1.0 –1.5 –2.0 –2.5

V

GS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.6
VGS = –2.5 V

0.5

0.4

0.3

TA = 125 ˚C

75 ˚C

0.2

25 ˚C

–25 ˚C

0.1

IyfsI - Forward Transfer Admittance - S

0.01
–0.0001 –0.001 –0.01 –0.1 –1

D - Drain Current - A

I

0

–0.001 –0.01 –0.1 –1 –10

RDS(on) - Drain to Source On-State Resistance - Ω

D - Drain Current - A

I

3

2SJ462

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.6
VGS = –4 V

0.5

0.4

0.3
TA = 125 ˚C

0.2

75 ˚C
25 ˚C

0.1

–25 ˚C

- Drain to Source On-State Resistance - Ω

0

DS(on)

–0.001 –0.01 –0.1 –1 –10

R

I

D

- Drain Current - A

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

10

VGS = 0
f = 1 MHz

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

0.3
ID = –2.5 A

0.2

–1.0 A

–0.5 A

0.1

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

0 –2 –4 –6 –8 –10

VGS - Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

1000

VDD = –3 V

GS(on)

= –3 V

V
Rin = 10 Ω

t

r

1

Ciss,Coss,Crss - Capacitance - pF

0.1
–0.1 –1 –10

DS

- Drain to Source Voltage - V

V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

–10

–1

–0.1

–0.01

- Reverse Drain Current - A

D

I

–0.001

–0.4 –0.6 –0.8 –1.0 –1.2 –1.4

SD

- Source to Drain Voltage - V

V

Ciss

Coss

Crss

t

f

t
t

d(off)

d(on)

100

- Switching Time - ns

f

,t

d(off)

,t

r

,t

d(on)

t

10

–0.1 –1 –10

D

- Draint Current - A

I

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

12

VDS = –8 V

V

D

= –2.5 A

I

GS

8

V

DS

4

- Drain to Source Voltage - V

DS

V

0

0 8 16 24 32 40

G

- Gate Charge - nC

Q

8

4

2

- Gate to Source Voltage - V

GS

V

0

4

2SJ462

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

2SJ462

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M4 94.11