Datasheet 2SJ459 Datasheet (SANYO)

Ordering number : ENN5423A

2SJ459

P-Channel Silicon MOSFET

2SJ459

Ultrahigh-Speed Switching Applications

Features

•

High-speed diode incorporated.

Package Dimensions

unit : mm

2093A

[2SJ459]

10.2

0.9

11.5

unit : mm

2090A

20.9

9.4

1.6

0.8

123

2.55

0.8

1.2

2.55

[2SJ459]

10.2

4.5

1.3

11.0 8.8

2.7

0.4

1 : Gate
2 : Drain
3 : Source

SANYO : SMP

4.5

1.3

9.93.0

123

0.8

2.55

8.8

1.5max

1.2

2.55

2.552.55

1.35

1 : Gate
2 : Drain
3 : Source

2.7

SANYO : SMP-FD

1.4

0 to 0.3

0.4

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83002 TS IM TA-100040

No.5423-1/4

2SJ459

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --16 A

Tc=25°C70W

Electrical Characteristics at Ta=25°C

--450 V
±30 V

--4 A

1.65 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --2.0 --3.0 V
Forward Transfer Admittance yfs
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 1500 pF
Output Capacitance Coss VDS=--20V, f=1MHz 230 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 80 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 35 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 300 ns
Fall Time t
Diode Forward Voltage V
Diode Reverse Recovery Time t

(BR)DSSID

DSS
GSS

RDS(on) ID=--2A, VGS=--10V 2.0 2.8 Ω

r

f

SD

rr

=--10mA, VGS=0 --450 V
VDS=--360V, VGS=0 --1.0 mA
VGS=±30V, VDS=0 ±100 nA

VDS=--10V, ID=--2A 1.2 2.4 S



See specified Test Circuit. 50 ns

See specified Test Circuit. 80 ns
IS=--4A, VGS=0 --1.5 V
IS=--4A, di / dt=100A / µs 150 195 ns

min typ max

Ratings

Marking : J459
*(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source.

Switching Time Test Circuit

VDD= --200V

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --2A
RL=100Ω

V

OUT

Unit

P.G

50Ω

2SJ459

S

No.5423-2/4

--7

--6

--5

-- A
D

--4

--3

--2

Drain Current, I

--1

0

0 --5 --10 --15 --20

ID -- V

DS

--10.0V

--6.0V

VGS= --3.5V

Drain-to-Source V oltage, VDS -- V

3.5

RDS(on) -- V

GS

--5.0V

--4.5V

--4.0V

IT03686

Tc=25°C

2SJ459

--6

VDS= --10V

--5

ID -- V

GS

Tc= --25°C

25°C

--4

-- A
D

--3

--2

75°C

Drain Current, I

--1

0

0 --2.5 --5.0 --7.5 --10.0 --12.5 --15.0

Gate-to-Source V oltage, VGS -- V

4.0

3.5

RDS(on) -- Tc

IT03687

3.0

(on) -- Ω

DS

2.5

2.0

Static Drain-to-Source

On-State Resistance, R

1.5
0 --2 --4 --6 --8 --12 --14--10

Gate-to-Source V oltage, VGS -- V

--10
7
5

3
2

--1.0
7
5

3
2

--2A

--1A

ID= --4A

yfs -- I

°C

Tc= --25

°C

75

IT03688

D

VDS= --10V

25°C

Forward Transfer Admitance, yfs -- S

--0.1

3
2

--10
7

5

-- A

3

F

2

--1.0
7

5
3

Forward Current, I

2

--0.1
7

5

27533275

Drain Current, ID -- A

--1.0--0.1

IF -- V

--10

IT03690

SD

VGS=0

25°C

Tc=75°C

--25°C

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 --5 --10 --15 --20 --25 --30

Diode Forward V oltage, V

SD

-- V

IT03692

3.0

(on) -- Ω

2.5

DS

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

0

--50 --25 0 25 50 75 100 125 150

V

GS

= --10V

--20V

Case Temperature, Tc -- °C

--5.0

--4.5

--4.0

--3.5

(off) -- V

--3.0

GS

--2.5

--2.0

--1.5

--1.0

Cutoff Voltage, V

--0.5
0

--50 --25 0 25 50 75 100 125 150

VGS(off) -- Tc

Case Temperature, Tc -- °C

10000

1000

100

Ciss, Coss, Crss -- pF

7
5

3
2

7
5

3
2

7
5

3
2

10

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, VDS -- V

IT03689

VDS= --10V
ID= --1mA

IT03691

DS

f=1MHz

Ciss

Coss

Crss

IT03693

No.5423-3/4

3

IDP= --16A

2

--10
7

ID= --4A

5
3

2

-- A
D

--1.0
7
5

Operation in

3

this area is

2

limited by RDS(on).

--0.1

Drain Current, I

7
5

3

Tc=25°C

2

single pulse

--0.01

-- W
D

--1.0

80

70

60

50

40

23 57

Forward Bias A S O

100µs

1ms

10ms

100ms

DC operation

23 57

--10 --100

Drain-to-Source V oltage, VDS -- V

P

-- Tc

D

23 57

10µs

--1000

IT03694

2SJ459

P

-- Ta

2.5

-- W

2.0

D

1.65

1.5

1.0

0.5

D

Allowable Power Dissipation, P

00

00 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT04253

30

20

10

Allowable Power Dissipation, P

00

00 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT03695

This catalog provides information as of August, 2002. Specifications and information herein are subject
to change without notice.

No.5423-4/4PS