Datasheet 2SJ450 Datasheet (HIT)

Application

High speed power switching

Features

• Low on-resistance.

• Low drive power

• High speed switching

• 2.5 V gate drive device.

2SJ450

Silicon P-Channel MOS FET

ADE-208-381

1st. Edition

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SJ450

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Drain peak current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. When using aluminium ceramic board (12.5 × 20 × 70 mm)

–60 V
±20 V
–1 A
–2 A
–1 A
1W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltage drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

DSS

GSS

GS(off)

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Fowerd transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A

Input capacitance Ciss — 150 — pF VDS = –10 V
Output capacitance Coss — 72 — pF VGS = 0
Reverse transfer capacitance Crss — 24 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse Test

Marking is "UY".

–60 — — V ID = –10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

— — –50 µAVDS = –50 V, VGS = 0
——±10 µAVGS = ±16 V, VDS = 0
–0.5 — –1.5 V VDS = –10 V, ID = –1 mA
— 0.85 1.2 Ω ID = –0.5 A

V

= –4 V*

GS

— 1.1 1.9 Ω ID = –0.3 A

V

= –2.5 V*

GS

V

= –10 V

DS

1

1

—6 —nsVGS = –10 V, ID = –0.5 A
—9 —nsR

= 60 Ω

L

—50—ns
—35—ns
— –0.9 — V IF = –1 A, VGS = 0

— 100 — ns IF = –1 A, VGS = 0

diF/dt = 50A/µs

2SJ450

3

2SJ450

Power vs. Temperature Derating

2.0
Test Condition :

When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

–10 V –6 V

–2.0

–4 V
–3 V

–1.6

D

–1.2

Pulse Test

–2.5 V

–10

–3

–1

D

–0.3

–0.1

Operation in

Drain Current I (A)

–0.03

this area is
limited by R

DS(on)

PW = 10 ms

DC Operation

Ta = 25 °C

Maximum Safe Operation Area

–0.01

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Typical Transfer Characteristics

–2.0

V = –10 V

DS

Pulse Test

D

–1.6

–25°C

–1.2

Tc = 75°C

25°C

10 µs

100 µs

1 ms

DS

–0.8

Drain Current I (A)

–0.4

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–2 V

V = –1.5 V

GS

DS

–0.8

Drain Current I (A)

–0.4

0

–1 –2 –3 –4 –5

Gate to Source Voltage V (V)

GS

4

2SJ450

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–2.0

–1.6

DS(on)

–1.2

–0.8

–0.4

Pulse Test

I = –1.5 A

D

–1 A

–0.5 A

Drain to Source Voltage V (V)

0

–2

Gate to Source Voltage V (V)

–4

–6 –8 –10

GS

Static Drain to Source on State Resistance

vs. Temperature

10

Pulse Test

Ω

8

Static Drain to Source on State Resistance

vs. Drain Current

20

Ω

10

5

DS(on)

R ( )

2

V = –2.5 V

GS

1

0.5

0.2

Pulse Test

Drain to Source On State Resistance

–4 V

–0.1 –0.2 –0.5 –1 –2

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

10

3

Tc = –25 °C

–5

–10

DS(on)

R ( )

6

I = –1.5 A

D

4

V = –2.5 V

GS

2

–4 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

–0.5 A

–1.0 A

–0.5 A

1.5 A

–1.0 A

Case Temperature Tc (°C)

1

0.3

25 °C

75 °C

0.1

0.03

Forward Transfer Admittance |yfs| (S)

0.01
–0.01 –0.03 –0.1 –0.3

Drain Current I (A)

V = –10 V

DS

Pulse Test

–1

–3 –10

D

5

2SJ450

Body to Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

–0.1

–0.2

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

–0.5 –1 –2 –5 –10

Reverse Drain Current I (A)

Dynamic Input Characteristics

DS

0

–20

V = –10 V

DD

–25 V
–50 V

DR

0

–4

Typical Capacitance vs.
Drain to Source Voltage

500

200

100

50

20

Capacitance C (pF)

10

V = 0

GS

f = 1 MHz

5

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

Switching Characteristics

200

100

GS

50

t

d(off)

Ciss

Coss

Crss

DS

–40

–60

V

DS

V = –50 V

DD

V

GS

–25 V
–10 V

–80

Drain to Source Voltage V (V)

–100

I = –2 A

D

0

246810
Gate Charge Qg (nc)

–8

t

20

–12

–16

–20

10

Switching Time t (ns)

5

V = –10 V, V = –30 V

Gate to Source Voltage V (V)

2

duty < 1 %

–0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

f

GS

t

r

t

d(on)

DD

D

6

–2.0

–1.6

DR

2SJ450

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Vin Monitor

Vin
–10 V

50Ω

–1.2

–5 V

V = 0, 5 V

–0.8

GS

–0.4

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit and Waveform

Vout
Monitor

D.U.T.

R

L

V

DD

= –30 V

Vin

Vout

SD

10%

10%

90%

90%

90%

10%

td(on)

tr

td(off)

t

f

7

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

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