Datasheet 2SJ411 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL SIGNAL MOS FET

FOR SWITCHING

2SJ411

The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.

FEATURES

• Radial taping supported

• Can be directly driven by 5-V IC

• Low ON resistance

DS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A

R

RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in mm)

7.0 MAX. 1.2

2.0

0.8 ±0.1

3.0 MAX.

0.6 ±0.1

0.6 ±0.1

0.6 ±0.1

1.71.7

1.5

G D S

4.0 MAX.

9.0 MAX.12.0 MIN.

0.55 ±0.1

EQUIVALENT CIRCUIT

Drain (D)

Gate (G)

Gate
Protection
Diode

Internal
Diode

Source (S)

PIN
CONNECTIONS

G: Gate
D: Drain
S: Source

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 µs ±20.0 A

Total Power Dissipation PT1 TA = 25 ˚C 1.0 W
Total Power Dissipation PT2 TC = 25 ˚C 6.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.

The information in this document is subject to change without notice.

Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

Duty cycle ≤ 1 %

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –10
Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.4 –2.0 V
Forward Transfer Admittance |yfs|VDS = –10 V, ID = –2.5 A 3.0 S
Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –2.5 A 0.175 0.24 Ω
Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –2.5 A 0.096 0.11 Ω
Input Capacitance Ciss VDS = –10 V, VGS = 0 790 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 280 pF
Turn-On Delay Time td(on) VDD = –15 V, ID = –2.5 A 10 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 185 ns
Gate Input Charge QG VDS = –24 V 29.8 nC
Gate to Source Charge QGS
Gate to Drain Charge QGD
Internal Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 1.0 V
Internal Diode Reverse Recovery Time
Internal Diode Reverse Recovery Charge

trr IF = 5.0 A, VGS = 0 140 ns
Qrr

f = 1.0 MHz

VGS(on) = –10 V
RG = 10 Ω, RL = 6 Ω

VGS = –10 V
ID = –5.0 A, IG = –2 mA

di/dt = 50 A/µs

580 pF

110 ns
195 ns

2.7 nC

11.5 nC

160 nC

2SJ411

µ

A

µ

A

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0 25 50 75 125 150

T

A

- Ambient Temperature - ˚C

100

FORWARD BIAS SAFE OPERATING AREA

–100

–50
–20

R

DS(on)

Limited

D(pulse)

= –20 A

PW = 1 mS

I

–10

I

D(DC)

–5
–2

–1

- Drain Current - A

D

I

–0.5

TC = 25 ˚C

–0.2

Single pulsed

–0.1

–1 –5 –10 –50 –100

= –5 A

DC

–2 –20

DS

- Drain to Source Voltage - V

V

PW = 10 mS

PW = 100 mS

2

2SJ411

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–5

–4

–3

10 V

–4.5 V

–4.0 V

–3.5 V

–3.0 V

–2

- Drain Current - A

D

I

–1

0–2–3

–1 –4

DS

- Drain to Source Voltage - V

V

FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT

10

V

DS

= –10 V

Pulsed

TA = 25 ˚C

TA = 75 ˚C

1

TA = –25 ˚C

TA = 125 ˚C

Pulsed

–2.5 V

VGS = –2.0 V

–5

TRANSFER CHARACTERISTICS

–20

V

DS

–10

= –10 V

Pulsed

–1

–0.1

TA = 125 ˚C

- Drain Current - A

D

I

–0.01

–0.001

–1 –4

0–2–3

GS

- Gate to Source Voltage - V

V

TA = 75 ˚C

TA = 25 ˚C

TA = –25 ˚C

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

0.3
V

GS

= –4 V

Pulsed

0.2

TA = 125 ˚C

TA = 75 ˚C
TA = 25 ˚C

0.1

TA = –25 ˚C

–5

| - Forward Transfer Admittance - S

fs

|y

0.1
–0.01

–0.1

D

- Drain Current - A

I

–1

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

0.3

V

GS

= –7 V

Pulsed

0.2

TA = 125 ˚C
TA = 75 ˚C

0.1

TA = 25 ˚C
TA = –25 ˚C

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

–0.01

–0.1

D

- Drain Current - A

I

–1

–10

–10

–20

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

–0.01

–0.1

D

- Drain Current - A

I

–1

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

0.2
VGS = –10 V

Pulsed

TA = 125 ˚C

0.1

TA = 75 ˚C
TA = 25 ˚C
TA = –25 ˚C

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

–0.01

–0.1
I

D

- Drain Current - A

–1

–10

–10

–20

3

2SJ411

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

0.5
I

D

= –5 A

Pulsed

0.4

0.3

0.2

T

A

= 125 ˚C

T

A

= 75 ˚C

0.1

T

A

- Drain to Source On-State Resistance - Ω

0 –2 –6 –10 –16 –20

DS(on)

R

V

GS

= –25 ˚C

- Gate to Source Voltage - V

T

A

= 25 ˚C

–12–4 –8 –14 –18

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

VGS = 0
f = 1 MHz

1000

C

iss

C

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

10

–1 –10 –100

DS

- Drain to Source Voltage - V

V

oss

C

rss

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

–10

V

GS

= 0

Pulsed

–1

–0.1

–0.01

–0.001

- Diode Forward Current - A

SD

I

–0.0001

–0.4 –1.4

SD

- Source to Drain Voltage - V

V

–1–0.6 –0.8

SWITCHING CHARACTERISTICS

1000

t

f

t

d(off)

100

t

r

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1
–0.1 –10

D

I

t

d(on)

–1

- Drain Current - A

–1.2

VDD = –15 V
V

GS(on)

= –10 V

RG = 10 Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

–12

–8

V

DS

V

GS

–4

- Gate to Source Voltage - V

GS

V

0

01624

832

g

- Gate Charge - nC

Q

4

–30

–20

–10

- Gate to Source Voltage - V

DS

V

0

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single pulse

100

10

1

(t) - Transient Thermal Resistance - ˚C/W

0.1

th(j-a)

r

1 m

10 m 100 m 1 10 100 1000

PW - Pulse Width - S

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

2SJ411

5

2SJ411

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11