Datasheet 2SJ409-S, 2SJ409-L Datasheet (HIT)

2SJ409(L), 2SJ409(S)

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V Gate drive device can be driven from 5 V source

• Suitable for Switching regulator, DC - DC converter

Outline

3

2

1

4

3

2

1

4

D

G

S

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

2SJ409(L), 2SJ409(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–100 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–20 A

Drain peak current I

D(pulse)

*

1

–80 A

Body to drain diode reverse drain current I

DR

–20 A

Channel dissipation Pch*

2

75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

2SJ409(L), 2SJ409(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown
voltage

V

(BR)DSS

–100 — — V ID = –10 mA, VGS = 0

Gate to source breakdown
voltage

V

(BR)GSS

±20 — — V IG = ±100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

— — –250 µAV

DS

= –80 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1 mA, VDS = –10 V

Static drain to source on state
resistance

R

DS(on)

— 0.12 0.16 Ω ID = –10 A

V

GS

= –10 V*

1

— 0.16 0.22 Ω ID = –10 A

V

GS

= –4 V*

1

Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A

V

DS

= –10 V*

1

Input capacitance Ciss — 1860 — pF VDS = –10 V
Output capacitance Coss — 680 — pF VGS = 0
Reverse transfer capacitance Crss — 145 — pF f = 1 MHz
Turn-on delay time t

d(on)

— 15 — ns ID = –10 A

Rise time t

r

— 115 — ns VGS = –10 V

Turn-off delay time t

d(off)

— 320 — ns RL = 3 Ω

Fall time t

f

— 170 — ns

Body to drain diode forward
voltage

V

DF

— –1.05 — V IF = –20 A, VGS = 0

Body to drain diode reverse
recovery time

t

rr

— 280 — ns IF = –20 A, VGS = 0,

diF/dt = 50 A/µs

See characteristics curves of 2SJ221

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

LDPAK (L)
—
—

1.4 g

Unit: mm

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

2.54 ± 0.5

+ 0.2
– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

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