
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6422
2SJ400
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the
surface mountable package.
Package Dimensions
unit:mm
2093A
[2SJ400]
10.2
0.9
11.5
unit:mm
2090A
1.6
0.8
9.4
2.55
10.2
0.8
1.2
123
[2SJ400]
2.55
1.3
11.0 8.8
0.4
1 : Gate
2.7
4.5
2 : Drain
3 : Source
SANYO : SMP
1.3
8.8
1.5max
123
0.8
2.55
1.2
2.55
2.7
2.552.55
30300TS (KOTO) TA-2164 No.6422–1/4
1.35
1.4
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD

2SJ400
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
SSD)RB(
D
I
SSG)RB(
G
V
SSD
V
SSG
)ffo(VSDI,V01–=
SG
RSD)no(IDV,A81–=
RSD)no(IDV,A81–=
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=03–V
SG
V,Aµ001±=
0=02±V
SD
V,V03–=
SD
SG
SD
SD
SD
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–0.2–V
D
A81–=6172S
D
V01–=0203mΩ
SG
V4–=0304mΩ
SG
zHM1=f,V01–=0004Fp
zHM1=f,V01–=0042Fp
zHM1=f,V01–=088Fp
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS005sn
tiucriCtseTdeificepseeS072sn
V,A53–=
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
03–V
02±V
53–A
041–A
56.1W
07W
˚C
˚C
tinU
Switching Time Test Circuit
VDD=--30V
V
in
0V
--10V
V
in
PW=10µs
D.C.≤1%
P.G
G
50Ω
ID=--18A
RL=1.67Ω
D
2SJ400
S
V
OUT
No.6422–2/4

--70
--60
--50
–A
D
--40
--30
V
=--5.0V
GS
ID -- V
--4.5V
DS
--4.0V
--3.5V
2SJ400
--70
--60
--50
–A
D
--40
--30
I
D
-- V
GS
Tc=--25
°C
75°C
VDS=--10V
25°C
--20
Drain Current, I
--10
0
100
7
5
fs|–S
y
3
2
10
7
5
3
2
Forward Transfer Admittance, |
1.0
60
50
–mΩ
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
2
1000
7
5
3
2
100
7
5
3
Switching Time, SW Time – ns
2
10
3
--20 --4 --6 --8 --10
Drain-to-Source Voltage, VDS–V
5
--1.0
5
77
--1 .0
--3.0V
--2.5V
IT00710 IT00711
y
fs -- I
D
VDS=--10V
°C
Tc=--25
--75°C
25
3337
Drain Current, ID– A Gate-to-Source Voltage, VGS–V
--10
25°C
25
7
--100
IT00712 IT00713
RDS(on) -- Tc
=- -4V
GS
=- -18A, V
I
D
=- -18A, V
I
D
Case Temperature, Tc – ˚C
SW Time -- I
td(off)
td(on)
25
Drain Current, ID–A
=- -10V
GS
16012080400--4 0--80
IT00714 IT00715
D
VDD=--30V
VGS=--10V
t
f
t
r
--1 0
233
5
IT00716 IT00717
--20
Drain Current, I
--10
0
0 --1 --2 --4--3 --5 --6
60
50
–mΩ
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
2
10000
7
5
3
2
1000
7
5
3
Ciss, Coss, Crss – pF
2
100
7
5
0
Gate-to-Source Voltage, VGS–V
RDS(on) -- V
--4
--20
--6
GS
--8
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--1 0 --1 5 --20 --25 --3 0--5
Drain-to-Source Voltage, VDS–V
2
IDP=--140A
--100
7
ID=--35A
5
–A
3
D
2
,I
--1 0
Drain Current
--1 .0
Operation in
this area is
limited by RDS(on).
7
5
3
2
Tc=25°C
Single pulse
7
57
--1 .0
Drain-to-Source Voltage, VDS–V
A S O
DC operation
233375
10ms
100ms
--1 0
1ms
Tc=25°C
ID=--18A
--14--12--10
DS
f=1MHz
10µs
100µs
25
No.6422–3/4

2.0
2SJ400
P
D
-- Ta
80
P
-- Tc
D
1.65
–W
1.6
D
1.2
0.8
0.4
No heat sink
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT00718
70
–W
D
60
50
40
30
20
10
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT00719
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6422–4/4